Atomistic Design of Guiding Principles for High Quality Metal–Oxide–Nitride–Oxide–Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers

Keita Yamguchi; Akira Otake; Katsumasa Kamiya; Yasuteru Shigeta; Kenji Shiraishi

doi:10.1143/jjap.50.04dd05

Atomistic Design of Guiding Principles for High Quality Metal–Oxide–Nitride–Oxide–Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dd05 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DD05 ◽

Cited By ~ 8

Author(s):

Keita Yamguchi ◽

Akira Otake ◽

Katsumasa Kamiya ◽

Yasuteru Shigeta ◽

Kenji Shiraishi

Keyword(s):

Metal Oxide ◽

First Principles ◽

Oxide Semiconductor ◽

High Quality ◽

Charge Trap ◽

First Principles Study ◽

Guiding Principles ◽

Nitride Oxide ◽

Quality Metal

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Atomistic Design of Guiding Principles for High Quality Metal–Oxide–Nitride–Oxide–Semiconductor Memories: First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dd05 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DD05 ◽

Cited By ~ 6

Author(s):

Keita Yamguchi ◽

Akira Otake ◽

Katsumasa Kamiya ◽

Yasuteru Shigeta ◽

Kenji Shiraishi

Keyword(s):

Metal Oxide ◽

First Principles ◽

Oxide Semiconductor ◽

High Quality ◽

Charge Trap ◽

First Principles Study ◽

Guiding Principles ◽

Nitride Oxide ◽

Quality Metal

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Atomistic Design of Guiding Principles for High Quality MONOS Memories-First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers-

10.7567/ssdm.2010.e-3-4 ◽

2010 ◽

Author(s):

K. Yamaguchi ◽

A. Otake ◽

K. Shiraishi

Keyword(s):

First Principles ◽

High Quality ◽

Charge Trap ◽

First Principles Study ◽

Guiding Principles

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Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

Applied Physics Letters ◽

10.1063/1.4940685 ◽

2016 ◽

Vol 108 (4) ◽

pp. 043504 ◽

Cited By ~ 2

Author(s):

Anh Khoa Augustin Lu ◽

Geoffrey Pourtois ◽

Tarun Agarwal ◽

Aryan Afzalian ◽

Iuliana P. Radu ◽

...

Keyword(s):

Metal Oxide ◽

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

First Principles Study

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Re-Examination of Performance and Reliability Degradation in Metal–Oxide–Nitride–Oxide–Semiconductor Memory with Ultrathin SiN Charge Trap Layers

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dd04 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DD04

Author(s):

Haruka Kusai ◽

Misako Morota ◽

Masato Oda ◽

Shosuke Fujii ◽

Kiwamu Sakuma ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Semiconductor Memory ◽

Charge Trap ◽

Nitride Oxide

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Re-Examination of Performance and Reliability Degradation in Metal–Oxide–Nitride–Oxide–Semiconductor Memory with Ultrathin SiN Charge Trap Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dd04 ◽

2012 ◽

Vol 51 ◽

pp. 04DD04

Author(s):

Haruka Kusai ◽

Misako Morota ◽

Masato Oda ◽

Shosuke Fujii ◽

Kiwamu Sakuma ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Semiconductor Memory ◽

Charge Trap ◽

Nitride Oxide

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Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

Physical Review B ◽

10.1103/physrevb.64.125306 ◽

2001 ◽

Vol 64 (12) ◽

Cited By ~ 37

Author(s):

Alexander A. Demkov ◽

Xiaodong Zhang ◽

D. A. Drabold

Keyword(s):

Metal Oxide ◽

First Principles ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage Characteristic ◽

Semiconductor Structures ◽

Current Voltage

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Achieving High-Quality Sn–Pb Perovskite Films on Complementary Metal-Oxide-Semiconductor-Compatible Metal/Silicon Substrates for Efficient Imaging Array

ACS Nano ◽

10.1021/acsnano.9b05774 ◽

2019 ◽

Vol 13 (10) ◽

pp. 11800-11808 ◽

Cited By ~ 8

Author(s):

Hugh Lu Zhu ◽

Hong Lin ◽

Zhilong Song ◽

Zishuai Wang ◽

Fei Ye ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

High Quality ◽

Imaging Array

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First principles study of the adhesion asymmetry of a metal/oxide interface

Journal of Materials Science ◽

10.1007/s10853-007-2137-1 ◽

2008 ◽

Vol 43 (11) ◽

pp. 3960-3968 ◽

Cited By ~ 16

Author(s):

C. L. Phillips ◽

P. D. Bristowe

Keyword(s):

Metal Oxide ◽

First Principles ◽

Oxide Interface ◽

First Principles Study

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A Low-Voltage Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS)

Japanese Journal of Applied Physics ◽

10.7567/jjaps.22s1.581 ◽

1983 ◽

Vol 22 (S1) ◽

pp. 581 ◽

Cited By ~ 1

Author(s):

Eiichi Suzuki ◽

Yutaka Hayashi ◽

Kenichi Ishii ◽

Hisato Hiraishi

Keyword(s):

Metal Oxide ◽

Low Voltage ◽

Oxide Semiconductor ◽

Semiconductor Memory ◽

Gate Insulators ◽

Nitride Oxide

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High-quality spin-on glass-based oxide as a matrix for embedding HfO2 nanoparticles for metal-oxide-semiconductor capacitors

Journal of Materials Science ◽

10.1007/s10853-011-6036-0 ◽

2011 ◽

Vol 47 (5) ◽

pp. 2248-2255 ◽

Cited By ~ 11

Author(s):

Joel Molina ◽

Ana Luz Munoz ◽

Wilfrido Calleja ◽

Pedro Rosales ◽

Alfonso Torres

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Quality

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