Extremely Scaled (${\sim}0.2$ nm) Equivalent Oxide Thickness of Higher-$k$ ($k = 40$) HfO$_{2}$ Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing

2012 ◽  
Vol 51 (2) ◽  
pp. 02BA04 ◽  
Author(s):  
Yukinori Morita ◽  
Shinji Migita ◽  
Wataru Mizubayashi ◽  
Hiroyuki Ota
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Gate Stacks ◽  
Post Deposition Annealing ◽  
Layer Deposition ◽  
Post Deposition

scholarly journals Extremely Scaled Equivalent Oxide Thickness of High-k (k=40) HfO2 Gate Stacks Prepared by Atomic Layer Deposition and Ti Cap Anneal

Hyomen Kagaku ◽  
2012 ◽  
Vol 33 (11) ◽  
pp. 610-615
Author(s):  
Yukinori MORITA ◽  
Shinji MIGITA ◽  
Wataru MIZUBAYASHI ◽  
Hiroyuki OTA
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Gate Stacks ◽  
Layer Deposition ◽  
High K

Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition

2005 ◽  
Vol 44 (4B) ◽  
pp. 2230-2234 ◽  
Author(s):  
Hag-Ju Cho ◽  
Hye Lan Lee ◽  
Hong Bae Park ◽  
Taek Soo Jeon ◽  
Seong Geon Park ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Layer Deposition ◽  
Post Deposition

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

2009 ◽  
Vol 94 (26) ◽  
pp. 262904 ◽  
Author(s):  
S. Abermann ◽  
O. Bethge ◽  
C. Henkel ◽  
E. Bertagnolli
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Layer Deposition ◽  
High K

Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

2006 ◽  
Vol 496 (2) ◽  
pp. 346-352 ◽  
Author(s):  
Jenni Harjuoja ◽  
Anne Kosola ◽  
Matti Putkonen ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Layer Deposition ◽  
Post Deposition

Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98337-98343 ◽  
Author(s):  
Felix Mattelaer ◽  
Tom Bosserez ◽  
Jan Rongé ◽  
Johan A. Martens ◽  
Jolien Dendooven ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Manganese Oxide ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Solar Hydrogen ◽  
Layer Deposition ◽  
Thin Film Catalysts ◽  
Post Deposition

Manganese oxide thin films were obtained by a combination of atomic layer deposition and post-deposition annealing, and the viability of these thin films as thin film catalysts for solar hydrogen devices has been demonstrated.

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