Extremely Scaled (∼0.2 nm) Equivalent Oxide Thickness of Higher-k(k= 40) HfO2Gate Stacks Prepared by Atomic Layer Deposition and Oxygen-Controlled Cap Post-Deposition Annealing
2012 ◽
Vol 51
(2S)
◽
pp. 02BA04
◽
2012 ◽
Vol 51
(2)
◽
pp. 02BA04
◽
2005 ◽
Vol 44
(4B)
◽
pp. 2230-2234
◽
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