High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BD01 ◽  
Author(s):  
Takashi Ohsawa ◽  
Fumitaka Iga ◽  
Shoji Ikeda ◽  
Takahiro Hanyu ◽  
Hideo Ohno ◽  
...  
Keyword(s):  
Low Power ◽  
Tunnel Junction ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
High Density ◽  
Spin Transfer ◽  
Static Random Access Memory ◽  
Access Memory

WRITE ERROR RATE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240001 ◽  
Author(s):  
ZIHUI WANG ◽  
YUCHEN ZHOU ◽  
JING ZHANG ◽  
YIMING HUAI
Keyword(s):  
Error Rate ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Underlying Mechanism ◽  
Theoretical Description ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetic Random Access Memory

This paper reviews the recent progress made to realize reliable write operations in spin transfer torque magnetic random access memory. Theoretical description of write error rate (WER) based on macro-spin models are discussed with comparison to experimental data. Recent studies on the phenomena that can lead to abnormal WER behaviors which include back-hopping and low probability bifurcated switching are reviewed with emphasis on underlying mechanism. The studies on the WER in perpendicular magnetic tunnel junction (MTJ) are also reviewed. It is demonstrated that, for both in-plane and perpendicular MTJ, reliable and error-free write operations can be achieved with thorough understanding of the underlying physics and innovative design/process solutions.

Equalization scheme analysis for high-density spin transfer torque random access memory

2016 ◽  
Author(s):  
Beomsang Yoo ◽  
Taehui Na ◽  
Byungkyu Song ◽  
Seong-Ook Jung ◽  
Jung Pill Kim ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
High Density ◽  
Spin Transfer ◽  
Access Memory ◽  
Scheme Analysis

Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

2002 ◽  
Vol 91 (8) ◽  
pp. 5246-5249 ◽  
Author(s):  
Naoki Nishimura ◽  
Tadahiko Hirai ◽  
Akio Koganei ◽  
Takashi Ikeda ◽  
Kazuhisa Okano ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Perpendicular Magnetization ◽  
Junction Device
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