Simulation Study of Emittance Growth from Coulomb Collisions in Low-Temperature Ion Beams

2009 ◽  
Vol 78 (12) ◽  
pp. 124501
Author(s):  
Yosuke Yuri ◽  
Hiromi Okamoto ◽  
Hiroshi Sugimoto
2007 ◽  
Vol 91 (12) ◽  
pp. 122105 ◽  
Author(s):  
S. J. Robinson ◽  
C. L. Perkins ◽  
T.-C. Shen ◽  
J. R. Tucker ◽  
T. Schenkel ◽  
...  

1993 ◽  
Vol 316 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Stefan Winter ◽  
Shinji Kimura ◽  
Yushin Tsai ◽  
...  

ABSTRACTC-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC+) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC+ for EC+ lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC+. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC+=170 eV. For EC+ higher than ~170 eV, increasing EC+ was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC+.


2011 ◽  
Vol 29 (3) ◽  
pp. 279-282 ◽  
Author(s):  
Y.Y. Lau ◽  
Simon S. Yu ◽  
John J. Barnard ◽  
Peter A. Seidl

AbstractWe have identified a general final compression section for HIF drivers, the section between accelerator and the target. The beams are given a head to tail velocity tilt at the beginning of the section for longitudinal compression, while going through bends that direct it to the target at specific angle. The aim is to get the beams compressed while maintaining a small centroid off-set after the bends. We used a specific example, 1 MJ driver with 500 MeV Rubidium + 1 ion beams. We studied the effect of minimizing dispersion using different bend strategies, and came up with a beamline point design with adiabatic bends. We also identified some factors that lead to emittance growth as well as the minimum pulse length and spot size on the target.


2017 ◽  
Vol 42 (37) ◽  
pp. 23799-23813 ◽  
Author(s):  
Srinivasan Raman ◽  
K.B. Iyeswaria ◽  
Sridharakumar Narasimhan ◽  
Raghunathan Rengaswamy

2003 ◽  
Vol 119 (22) ◽  
pp. 11740-11752 ◽  
Author(s):  
Bertrand Guillot ◽  
Yves Guissani

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