(Invited) Wide-Bandgap Semiconductor Based Power Electronic Devices for Energy Efficiency

2018 ◽  
Vol 86 (12) ◽  
pp. 3-16 ◽  
Author(s):  
Eric P Carlson ◽  
Daniel W Cunningham ◽  
Isik C. Kizilyalli
Keyword(s):  
Energy Efficiency ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic ◽  
Wide Bandgap Semiconductor

scholarly journals Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

2016 ◽  
Vol 6 (2) ◽  
pp. Q3061-Q3066 ◽  
Author(s):  
R. J. Kaplar ◽  
A. A. Allerman ◽  
A. M. Armstrong ◽  
M. H. Crawford ◽  
J. R. Dickerson ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic

scholarly journals ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS

2006 ◽  
Vol 16 (02) ◽  
pp. 545-556 ◽  
Author(s):  
BURAK OZPINECI ◽  
MADHU SUDHAN CHINTHAVALI ◽  
LEON M. TOLBERT
Keyword(s):  
Silicon Carbide ◽  
Field Strength ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic ◽  
Different Temperatures ◽  
Bandgap Semiconductors ◽  
Switching Characteristics ◽  
Unipolar Devices

Silicon carbide ( SiC ) unipolar devices have much higher breakdown voltages than silicon ( Si ) unipolar devices because of the ten times greater electric field strength of SiC compared with Si . 4H - SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H - SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

Electronic and transport properties of Li-doped NiO epitaxial thin films

2018 ◽  
Vol 6 (9) ◽  
pp. 2275-2282 ◽  
Author(s):  
J. Y. Zhang ◽  
W. W. Li ◽  
R. L. Z. Hoye ◽  
J. L. MacManus-Driscoll ◽  
M. Budde ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transport Properties ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Epitaxial Thin Films ◽  
Wide Bandgap Semiconductor ◽  
Li Doping ◽  
Work Functions ◽  
P Type

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

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