scholarly journals Nitride Wide Bandgap Semiconductor Material and Electronic Devices by Yue Hao, Jin-Feng Zhang, and Jin-Cheng Zhang

MRS Bulletin ◽  
2018 ◽  
Vol 43 (1) ◽  
pp. 69-69
Keyword(s):  
Electronic Devices ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Wide Bandgap Semiconductor

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

Electronic and transport properties of Li-doped NiO epitaxial thin films

2018 ◽  
Vol 6 (9) ◽  
pp. 2275-2282 ◽  
Author(s):  
J. Y. Zhang ◽  
W. W. Li ◽  
R. L. Z. Hoye ◽  
J. L. MacManus-Driscoll ◽  
M. Budde ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transport Properties ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Epitaxial Thin Films ◽  
Wide Bandgap Semiconductor ◽  
Li Doping ◽  
Work Functions ◽  
P Type

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

(Invited) Wide-Bandgap Semiconductor Based Power Electronic Devices for Energy Efficiency

2018 ◽  
Vol 86 (12) ◽  
pp. 3-16 ◽  
Author(s):  
Eric P Carlson ◽  
Daniel W Cunningham ◽  
Isik C. Kizilyalli
Keyword(s):  
Energy Efficiency ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic ◽  
Wide Bandgap Semiconductor

Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

2021 ◽  
Vol 119 (5) ◽  
pp. 051906
Author(s):  
C. Yu ◽  
P. Andalib ◽  
A. Sokolov ◽  
O. Fitchorova ◽  
W. Liang ◽  
...  
Keyword(s):  
Phased Arrays ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2019 ◽  
Vol 31 (36) ◽  
pp. 1903580 ◽  
Author(s):  
Chuanhui Gong ◽  
Junwei Chu ◽  
Chujun Yin ◽  
Chaoyi Yan ◽  
Xiaozong Hu ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Confined Growth

Ferromagnetism of wide-bandgap semiconductor surfaces: Mg-doped AlN

2015 ◽  
Vol 54 (11) ◽  
pp. 110302 ◽  
Author(s):  
Sandhya Chintalapati ◽  
Yongqing Cai ◽  
Ming Yang ◽  
Lei Shen ◽  
Yuan Ping Feng
Keyword(s):  
Wide Bandgap ◽  
Semiconductor Surfaces ◽  
Wide Bandgap Semiconductor ◽  
Mg Doped

Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

2015 ◽  
Vol 25 (43) ◽  
pp. 6802-6813 ◽  
Author(s):  
Pichaya Pattanasattayavong ◽  
Alexander D. Mottram ◽  
Feng Yan ◽  
Thomas D. Anthopoulos
Keyword(s):  
Wide Bandgap ◽  
Hole Transport ◽  
Transport Processes ◽  
Solution Processed ◽  
Wide Bandgap Semiconductor
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