scholarly journals ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS

2006 ◽  
Vol 16 (02) ◽  
pp. 545-556 ◽  
Author(s):  
BURAK OZPINECI ◽  
MADHU SUDHAN CHINTHAVALI ◽  
LEON M. TOLBERT
Keyword(s):  
Silicon Carbide ◽  
Field Strength ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic ◽  
Different Temperatures ◽  
Bandgap Semiconductors ◽  
Switching Characteristics ◽  
Unipolar Devices

Silicon carbide ( SiC ) unipolar devices have much higher breakdown voltages than silicon ( Si ) unipolar devices because of the ten times greater electric field strength of SiC compared with Si . 4H - SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H - SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

scholarly journals Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

2016 ◽  
Vol 6 (2) ◽  
pp. Q3061-Q3066 ◽  
Author(s):  
R. J. Kaplar ◽  
A. A. Allerman ◽  
A. M. Armstrong ◽  
M. H. Crawford ◽  
J. R. Dickerson ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic

On the Progress Made in GaN Vertical Device Technology

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940010
Author(s):  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Wide Range ◽  
Higher Power ◽  
Key Driver ◽  
Bandgap Semiconductors ◽  
Device Technology ◽  
Made In

Silicon technology enabled most of the electronics we witness today, including power electronics. However, wide bandgap semiconductors are capable of addressing high-power electronics more efficiently compared to Silicon, where higher power density is a key driver. Among the wide bandgap semiconductors, silicon carbide (SiC) and gallium nitride (GaN) are in the forefront in power electronics. GaN is promising in its vertical device topology. From CAVETs to MOSFETs, GaN has addressed voltage requirements over a wide range. Our current research in GaN offers a promising view of GaN that forms the theme of this article. CAVETs and OGFETs (a type of MOSFET) in GaN are picked to sketch the key achievements made in GaN vertical device over the last decade.

Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes

2018 ◽  
Vol 924 ◽  
pp. 302-305
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Frequency ◽  
High Performance ◽  
Light Emitting Diode ◽  
Wide Bandgap ◽  
Photovoltaic Device ◽  
Light Emitting ◽  
Current Voltage ◽  
Bandgap Semiconductors

In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simulated with QuantumWise Atomistix Toolkit (ATK) software, and microscale devices are simulated with Silvaco TCAD software. Current-voltage (IV) characteristics of nanoscale and microscale simulated devices are compared and discussed. The effects of non-ideal bonding at the heterojunction interface due to lattice misplacements (axial displacement of bonded wafers) are studied using the ATK simulator. These simulations lay the groundwork for the experiments, which are targeted to produce either a photovoltaic device or a light-emitting diode (working in the ultraviolet or terahertz spectra), by direct bonding of SiC polytypes.

Wide Bandgap Semiconductors - Nanowires of p- and n-type Silicon Carbide

2006 ◽  
Vol 963 ◽  
Author(s):  
Bettina Friedel ◽  
Siegmund Greulich-Weber
Keyword(s):  
Silicon Carbide ◽  
Sol Gel ◽  
Reduction Process ◽  
Atomic Ratio ◽  
Wide Bandgap ◽  
Resonance Spectroscopy ◽  
Wide Bandgap Semiconductors ◽  
Paramagnetic Resonance ◽  
Bandgap Semiconductors ◽  
Nano Wires

ABSTRACTMonocrystalline nanowires of cubic silicon carbide were synthesized using a combined sol-gel and carbothermal reduction process in which tetraethoxysilane was used as primary sili-con and sucrose as carbon source. The diameters of the as-grown nanowires varied depending on process parameters from several tens to several hundreds nanometers, whereas the length of the wires was located in the millimetre region. By precisely controlling the atomic ratio of Si / C, silicon carbide nano wires were synthesized exclusively and pure without the presence of resid-ual carbon or unwanted silica, thus leads to semi-insulating behaviour. Supported by their consis-tence the silicon carbide micro or nano wires can be processed to textile or felt structures and are therefore usable for many applications such as for fireproof clothing, high temperature or chemi-cal filters and composite materials. Additionally during sol-gel synthesis the silicon carbide mi-cro / nano wires were easily doped to achieve p- or n-conduction, guiding to new applications in the field of wide bandgap semiconductors. The structure of 3C-SiC micro and nano wires was determined using scanning electron microscopy, X-ray diffraction, nuclear magnetic resonance and fourier transform infrared spectroscopy. The electronic properties were studied using elec-tron paramagnetic resonance spectroscopy, Hall effect and current-voltage measurements.

scholarly journals Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

2019 ◽  
Vol 9 (2) ◽  
pp. 1453
Author(s):  
Ramani Kannan ◽  
Saranya Krishnamurthy ◽  
Chay Che Kiong ◽  
Taib B Ibrahim
Keyword(s):  
Silicon Carbide ◽  
Dynamic Characteristics ◽  
Gamma Ray ◽  
Electronic Devices ◽  
Dose Effect ◽  
Power Electronic ◽  
Switching Speed ◽  
Power Mosfet ◽  
Power Mosfets ◽  
Gamma Ray Irradiation

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles

2013 ◽  
Vol 740-742 ◽  
pp. 85-90 ◽  
Author(s):  
Heikki I. Helava ◽  
Evgeny N. Mokhov ◽  
Oleg A. Avdeev ◽  
Mark G. Ramm ◽  
Dmitri P. Litvin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Refractory Metal ◽  
Lower Cost ◽  
Low Cost ◽  
Wide Bandgap ◽  
Tantalum Carbide ◽  
Metal Carbide ◽  
Metal Carbides ◽  
High Quality ◽  
Bandgap Semiconductors

Recently the wide bandgap semiconductors, silicon carbide (SiC) and aluminum nitride (AlN), have acquired increased importance due to the unique properties that make them applicable to a variety of rapidly-emerging, diverse technologies. In order to meet the challenges posed by these applications the materials need to be manufactured with the highest possible quality, both structural and chemical, at increasingly lower cost. This requirement places rather extreme constraints on the crystal growth as the simultaneous goals of high quality and low cost are generally incompatible. Refractory metal carbide technology, particularly, tantalum carbide (TaC), was originally developed for application in highly corrosive and reactive environments. The SiC group of Prof Yuri A Vodakov (for example, [1]) at Karmon Ltd in St Petersburg, Russia was the first to study and utilize the properties of refractory metal carbides, first for the growth of SiC and later for the growth of AlN. We discuss how the refractory metal carbides can answer many of the problems of growing SiC and AlN in a relatively simple and low cost manner.

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