Wide bandgap semiconductor electronic devices for high frequency applications

2002 ◽  
Author(s):  
R.J. Trew ◽  
M.W. Shin ◽  
V. Gatto
Keyword(s):  
High Frequency ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Electronic

Electronic and transport properties of Li-doped NiO epitaxial thin films

2018 ◽  
Vol 6 (9) ◽  
pp. 2275-2282 ◽  
Author(s):  
J. Y. Zhang ◽  
W. W. Li ◽  
R. L. Z. Hoye ◽  
J. L. MacManus-Driscoll ◽  
M. Budde ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transport Properties ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Epitaxial Thin Films ◽  
Wide Bandgap Semiconductor ◽  
Li Doping ◽  
Work Functions ◽  
P Type

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

(Invited) Wide-Bandgap Semiconductor Based Power Electronic Devices for Energy Efficiency

2018 ◽  
Vol 86 (12) ◽  
pp. 3-16 ◽  
Author(s):  
Eric P Carlson ◽  
Daniel W Cunningham ◽  
Isik C. Kizilyalli
Keyword(s):  
Energy Efficiency ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic ◽  
Wide Bandgap Semiconductor

Novel Thermal-Electrical-Mechanical Model for Simulating Coupled Phenomena in High-Frequency Electronic Devices

2013 ◽  
Vol 538 ◽  
pp. 173-176
Author(s):  
Jing Zhang
Keyword(s):  
Finite Element ◽  
Electric Fields ◽  
High Frequency ◽  
Electronic Devices ◽  
High Stress ◽  
Element Model ◽  
Wide Bandgap ◽  
Operating Conditions ◽  
Element Approach ◽  
High Electric Fields

We present a fully coupled thermal-electrical-mechanical finite element based model to study material degradation behaviors of high-frequency electronic devices. The mechanisms of degradation and ultimately failure in wide bandgap (WBG) devices are very complex. Under operating conditions, the devices are usually subject to high electric fields, high stress/strain fields, high current densities, high temperatures and high thermal gradients. Moreover, these phenomena are coupled together. The presented finite element model is capable of computing stress, temperature, and electric fields based on an innovative finite element approach for the solution of non-linear coupled thermal-electrical-mechanical problems. The model can be applied to wide bandgap electronic devices to address major issues of performance and lifetime.

Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

2021 ◽  
Vol 119 (5) ◽  
pp. 051906
Author(s):  
C. Yu ◽  
P. Andalib ◽  
A. Sokolov ◽  
O. Fitchorova ◽  
W. Liang ◽  
...  
Keyword(s):  
Phased Arrays ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2019 ◽  
Vol 31 (36) ◽  
pp. 1903580 ◽  
Author(s):  
Chuanhui Gong ◽  
Junwei Chu ◽  
Chujun Yin ◽  
Chaoyi Yan ◽  
Xiaozong Hu ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Confined Growth

Ferromagnetism of wide-bandgap semiconductor surfaces: Mg-doped AlN

2015 ◽  
Vol 54 (11) ◽  
pp. 110302 ◽  
Author(s):  
Sandhya Chintalapati ◽  
Yongqing Cai ◽  
Ming Yang ◽  
Lei Shen ◽  
Yuan Ping Feng
Keyword(s):  
Wide Bandgap ◽  
Semiconductor Surfaces ◽  
Wide Bandgap Semiconductor ◽  
Mg Doped
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