Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing

1999 ◽  
Vol 146 (5) ◽  
pp. 1971-1976 ◽  
Author(s):  
G. Kissinger ◽  
T. Grabolla ◽  
G. Morgenstern ◽  
H. Richter ◽  
D. Gräf ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon ◽  
Device Processing ◽  
Oxide Precipitate

The origin of defects in SiO2thermally grown on Czochralski silicon substrates

1995 ◽  
Vol 78 (3) ◽  
pp. 1940-1943 ◽  
Author(s):  
Manabu Itsumi ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon

Determination of Sub‐Parts per Billion Boron Contamination in N+ Czochralski Silicon Substrates by SIMS

1994 ◽  
Vol 141 (12) ◽  
pp. 3453-3456 ◽  
Author(s):  
Paul K. Chu ◽  
Roger J. Bleiler ◽  
Jenny M. Metz
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon

Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon

1999 ◽  
Vol 146 (9) ◽  
pp. 3461-3465 ◽  
Author(s):  
T. Ono ◽  
A. Romanowski ◽  
E. Asayama ◽  
H. Horie ◽  
K. Sueoka ◽  
...  
Keyword(s):  
Dislocation Generation ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Induced Dislocation ◽  
Oxide Precipitate

Record Efficiency on Large Area P-Type Czochralski Silicon Substrates

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NA08 ◽  
Author(s):  
Brett Hallam ◽  
Stuart Wenham ◽  
Haeseok Lee ◽  
Eunjoo Lee ◽  
Hyunwoo Lee ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Large Area ◽  
Czochralski Silicon ◽  
P Type

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

2015 ◽  
Vol 242 ◽  
pp. 135-140 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Density Profiles ◽  
Cooling Stage ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Oxygen Precipitation ◽  
Oxide Precipitate ◽  
Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

2010 ◽  
Vol 8 (3) ◽  
pp. 674-677 ◽  
Author(s):  
Jiahe Chen ◽  
Jan Vanhellemont ◽  
Eddy Simoen ◽  
Johan Lauwaert ◽  
Henk Vrielinck ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Silicon Substrates ◽  
Czochralski Silicon ◽  
Induced Defects ◽  
Irradiation Induced Defects

Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

2000 ◽  
Vol 147 (2) ◽  
pp. 756 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Mitsuharu Yonemura ◽  
Toshiaki Ono ◽  
Eiichi Asayama ◽  
...  
Keyword(s):  
Boron Doping ◽  
Silicon Substrates ◽  
Czochralski Silicon ◽  
Oxygen Precipitation
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