A Theoretical Analysis of Brush Scrubbing Following Chemical Mechanical Polishing

2003 ◽  
Vol 150 (2) ◽  
pp. G140 ◽  
Author(s):  
G. M. Burdick ◽  
N. S. Berman ◽  
S. P. Beaudoin
Keyword(s):  
Theoretical Analysis ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Comparison of Interfacial Forces During Post-Chemical-Mechanical-Polishing Cleaning

2008 ◽  
Vol 130 (2) ◽  
Author(s):  
Dedy Ng ◽  
Hong Liang
Keyword(s):  
Theoretical Analysis ◽  
Chemical Mechanical Polishing ◽  
Substrate Surface ◽  
Applied Pressure ◽  
Mechanical Polishing ◽  
Hydrodynamic Drag ◽  
Subsequent Removal ◽  
Interfacial Forces ◽  
Fluid Drag ◽  
Physical And Chemical

This research investigates the interfacial forces involved in tribological interactions while removing nanosized particles during post-chemical-mechanical polishing cleaning. Surface and interfacial forces are discussed to understand the particle adhesion and subsequent removal through physical and chemical interactions. Approaches include theoretical analysis combined with experimental study. The theoretical analysis was focused on the forces that exist between particles and a substrate. Surface interaction consideration includes applied pressure, frictional force, and hydrodynamic drag. The polishing experiments were carried out on silicon wafers with SiO2 slurry. Cleaning experiments were performed in de-ionized water using a polyvinyl acetal brush to remove particles from a hydrophilic-silicon surface. The fluid-drag force was found to affect the lubricating behavior of cleaning through changing material properties. Values of interfacial forces and their effects on cleaning were discussed along with a lubricating model system.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

scholarly journals Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

2021 ◽  
Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Ordered Mesoporous ◽  
Mesoporous Structures

Mechanism Analysis of Chemical Mechanical Polishing of 4H-SiC Wafer

2020 ◽  
Author(s):  
Gaoyang Zhao ◽  
Aoxue Xu ◽  
Fan Xu ◽  
Daohuan Feng ◽  
WeiliLiu ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Mechanism Analysis ◽  
Sic Wafer

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

Effects of Slurry pH on Chemical and Mechanical Actions during Chemical Mechanical Polishing of YAG

2021 ◽  
pp. 150359
Author(s):  
Qing Mu ◽  
Zhuji Jin ◽  
Xiaolong Han ◽  
Ying Yan ◽  
Zili Zhang ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Analysis of Main Physical Factors of Chemical Mechanical Polishing About Lithium Tantalate

2021 ◽  
Author(s):  
Ye Li ◽  
Baoguo Zhang ◽  
Haoran Li ◽  
Xiaofan Yang ◽  
Wei Wei ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Lithium Tantalate ◽  
Mechanical Polishing ◽  
Physical Factors
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