Nucleation on SiO2 during the Selective Chemical Vapor Deposition of Tungsten by the Hydrogen Reduction of Tungsten Hexafluoride

1994 ◽  
Vol 141 (12) ◽  
pp. 3532-3539 ◽  
Author(s):  
Nathan Desatnik ◽  
Brian E. Thompson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Reduction ◽  
Chemical Vapor ◽  
Tungsten Hexafluoride ◽  
Selective Chemical

Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

2007 ◽  
Vol 990 ◽  
Author(s):  
Hideaki Zama ◽  
Yuuji Nishimura ◽  
Michiyo Yago ◽  
Mikio Watanabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Reduction ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Cu Films ◽  
Pure Cu ◽  
Substrate Temperatures ◽  
Advanced Generation

ABSTRACTChemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia

2006 ◽  
Vol 921 ◽  
Author(s):  
Shawn S Coffee ◽  
Wyatt A Winkenwerder ◽  
Scott K Stanley ◽  
Shahrjerdi Davood ◽  
Sanjay K Banerjee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Self Assembly ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Pore Density ◽  
Hot Wire ◽  
Precise Positioning ◽  
Selective Chemical

AbstractGermanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.

Selective chemical vapor deposition of tungsten for microelectromechanical structures

1989 ◽  
Vol 20 (1-2) ◽  
pp. 123-133 ◽  
Author(s):  
N.C. Macdonald ◽  
L.Y. Chen ◽  
J.J. Yao ◽  
Z.L. Zhang ◽  
J.A. McMillan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Chemical

Consecutive and Selective Chemical Vapor Deposition of Pt/Al Bilayer Electrodes for TiO2Resistive Switching Memory

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC08 ◽  
Author(s):  
Heejung Park ◽  
Seunghee Go ◽  
Chiyoung Lee ◽  
Hoseok Nam ◽  
Jong-Kwon Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Chemical ◽  
Switching Memory

Initial Stage of Laser-Induced Selective Chemical Vapor Deposition of Silicon

1987 ◽  
Vol 26 (Part 1, No. 12) ◽  
pp. 2057-2060 ◽  
Author(s):  
Takeshi Tanaka ◽  
Koji Deguchi ◽  
Masataka Hirose
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Initial Stage ◽  
Selective Chemical
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