Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

2007 ◽  
Vol 990 ◽  
Author(s):  
Hideaki Zama ◽  
Yuuji Nishimura ◽  
Michiyo Yago ◽  
Mikio Watanabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Reduction ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Cu Films ◽  
Pure Cu ◽  
Substrate Temperatures ◽  
Advanced Generation

ABSTRACTChemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

On the carbo-thermal reduction of silica for carbon nano-fibre formation via CVD

2011 ◽  
Vol 1284 ◽  
Author(s):  
Alicja Bachmatiuk ◽  
Felix Börrnert ◽  
Imad Ibrahim ◽  
Bernd Büchner ◽  
Mark H. Rümmeli
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbothermal Reduction ◽  
Carbon Nanostructures ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thermal Reduction ◽  
Fibre Formation ◽  
Quartz Substrates

ABSTRACTThe formation of carbon nanostructures using silica nanoparticles from quartz substrates as a catalyst in an aerosol assisted chemical vapor deposition process was examined. The silica particles are reduced to silicon carbide via a carbothermal reduction process. The recyclability of the explored quartz substrates is also presented. The addition of triethyl borate improves the efficiency of the carbothermal reduction process and carbon nanotubes formation. Moreover, the addition of hydrogen during the chemical vapor deposition leads to the helical carbon nanostructures formation.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Thermodynamic Analysis of Chemical Vapor Deposition Progress for SiC Coatings

2014 ◽  
Vol 633 ◽  
pp. 183-188 ◽  
Author(s):  
Ming Wei Chen ◽  
Hai Peng Qiu ◽  
Jian Jiao ◽  
Xiu Qian Li ◽  
Yu Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermodynamic Analysis ◽  
Reaction Temperature ◽  
Vapor Deposition ◽  
Raw Materials ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
System Pressure ◽  
Optimal Reaction Temperature ◽  
Sic Coatings

Equilibrium compositions of chemical vapor deposition progress for silicon carbide (CVD-SiC) coatings with MTS/H2 mixture system were calculated by means of HSC Chemistry5.0 code, and influences of the reaction temperature (T), the system pressure (P) and the composition of raw materials (molar ratio of H2 to SiCH3Cl3, β) were investigated. Thermodynamic analysis showed that the value of nC /nSiC in reaction product decreased to a minimum and then increased with the increase of the reaction temperature between 700-1600°C, which meant an optimal reaction temperature existed theoretically for CVD-SiC coatings with highest purity. Furthermore, CVD-SiC coatings with high purity were obtained by experiments under the reaction pressure of 10kPa, H2/SiCH3Cl3 value of 10 and reacton temperature of 1100°C, which was in accordance with the theoretical prediction.

Low-Energy Plasma Enhanced Chemical Vapor Deposition

1998 ◽  
Vol 533 ◽  
Author(s):  
Carsten Rosenblad ◽  
Thomas Graf ◽  
Alex Dommann ◽  
Hans Von känel
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Energy ◽  
Buffer Layers ◽  
Surface Kinetics ◽  
Speed Up ◽  
Reactive Gases ◽  
Substrate Temperatures

AbstractWe discuss a new method for plasma enhanced chemical vapor deposition, applied to the epitaxial growth of Si and of Si-Ge heterostructures. Growth rates up to 5 nm/s become possible at substrate temperatures below 600°C, by utilizing very intense but low energy plasmas to crack the reactive gases, SiH4 and GeH4, and to speed up the surface kinetics. The method is applied to the synthesis of step-graded Si-Ge buffer layers, exhibiting the well known cross-hatched surface morphology.

Structural and optoelectronic properties of amorphous and microcrystalline silicon deposited at low substrate temperatures by RF and HW CVD

1999 ◽  
Vol 557 ◽  
Author(s):  
P. Alpuim ◽  
V. Chu ◽  
J. P. Conde
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Defect Density ◽  
Chemical Vapor ◽  
Optoelectronic Properties ◽  
Microcrystalline Silicon ◽  
Crystalline Fraction ◽  
Hydrogen Dilution ◽  
Structural And Optoelectronic Properties ◽  
Substrate Temperatures

AbstractThe structural and optoelectronic properties of silicon thin films prepared by hot wire chemical vapor deposition and radio frequency plasma enhanced chemical vapor deposition are studied in the range of substrate temperatures (Tsub)from 100 °C to 25 °C. The defect density, structure factor and bond angle disorder of amorphous silicon films (a-Si:H) deposited by both techniques are strongly improved by the use of hydrogen dilution. Correlation of these structural properties with important optoelectronic properties, such as photo-to-dark conductivity ratio, is made. Microcrystalline silicon (μc-Si:H) is obtained using HW with a large crystalline fraction for hydrogen dilutions above 85% independently of Tsub. The deposition of μc-Si:H by RF requires increasing the hydrogen dilution and shows decreasing crystalline fraction as Tsub is decreased. The properties of the low Tsub films are compared to those of samples produced at 175 °C and 250 °C in the same reactors.

Ba2TiO4 and Ba4Ti13O30 Thick Films Prepared by Laser Chemical Vapor Deposition and their Microstructure

2012 ◽  
Vol 508 ◽  
pp. 199-202
Author(s):  
Dong Yun Guo ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Thick Films ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Columnar Growth ◽  
Deposition Rates

Ba2TiO4 and Ba4Ti13O30 Thick Films Were Prepared by Laser Chemical Vapor Deposition Using Ba- and Ti-Dipivaloylmethanate Precursors. Single-Phase Ba2TiO4 Thick Films Were Obtained at 845–946 K and Ba/Ti Source Molar Ratio 2.4. Single-Phase Ba4Ti13O30 Films Were Obtained at 944–1011 K and Ba/Ti Source Molar Ratio 0.38. Ba2TiO4 Thick Films Consisted of Truncated Grains, while Ba4ti13o30 Thick Films Had Shellfish-Like Grains. Ba2TiO4 and Ba4Ti13O30 Thick Films Showed a Columnar Growth and their Deposition Rates Were 72 and 132 μm h−1, Respectively.

Reaction Kinetics of Epitaxial Silicon Deposition at 220-400°C Using Remote Plasma-Enhanced Chemical Vapor Deposition

1989 ◽  
Vol 165 ◽  
Author(s):  
B. Anthony ◽  
T. Hsu ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Inert Carrier ◽  
Substrate Temperatures ◽  
Kinetics Of

AbstractIn this paper the reaction kinetics of Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) are investigated. Growth rate characterization has been performed for substrate temperatures of 220 – 400°C, r-f powers from 4 – 8 W, and silane flow rates of 10 – 30 sccm. Growth rate has been found to increase exponentially with r-f power, which is, as yet, unexplained. An approximate square root dependence of growth rate on silane partial pressure agrees with the theory of Claasen et. Al for Chemical Vapor Deposition (CVD) of silicon from silane with an inert carrier gas. From an Arrhenius plot of the temperature dependence of growth rate, we note a change of slope at ∼300°C which we have attributed to the behavior of hydrogen at the silicon surface.

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