chemical vapor deposition reaction
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Shinku ◽  
1995 ◽  
Vol 38 (5) ◽  
pp. 516-519 ◽  
Author(s):  
Yoshitsugu TSUTSUMI ◽  
Masato IKEGAWA ◽  
Tatehito USUI ◽  
Jun'ichi KOBAYASHI ◽  
Kazunori WATANABE

1989 ◽  
Vol 168 ◽  
Author(s):  
Carmela C. Amato ◽  
John B. Hudson ◽  
Leonard V. Interrante

AbstractA novel technique for probing chemical vapor deposition reaction mechanisms is presented. A conventional hot-wall Pyrex reactor is coupled to a molecular beam apparatus. Preliminary results of the decomposition of an organometallic precursor to AIN, [AI(CH3)2NH2]3, indicate a decomposition temperature between 200 and 270°C. The mass spectrum of the precursor at 100°C provides evidence for the existence of a trimer-dimer equilibrium of the precursor at this temperature


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