Reactive Ion Etching of PECVD n+ a‐Si:H: Plasma Damage to PECVD Silicon Nitride Film and Application to Thin Film Transistor Preparation

1992 ◽  
Vol 139 (2) ◽  
pp. 548-552 ◽  
Author(s):  
Y. Kuo ◽  
M. S. Crowder
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Thin Film Transistor ◽  
Reactive Ion Etching ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Damage ◽  
Ion Etching

A Study of Oxygen Reduction of Tin- or Zinc-doped Indium Oxide (ITO or IZO) Film Induced by Deposition of Silicon Nitride Film in PECVD Process

2006 ◽  
Vol 936 ◽  
Author(s):  
Byoung-June Kim ◽  
Youn-Mo Choi ◽  
Kunal Girotra ◽  
Sung-Hoon Yang ◽  
Shi-Yul Kim ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Oxygen Reduction ◽  
Indium Oxide ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Optical Transmittance ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Transistor Fabrication ◽  
Sinx Film

ABSTRACTIn the thin film transistor fabrication process, tin doped indium oxide (ITO) or zinc doped indium oxide (IZO) film can be easily exposed to hydrogen-containing plasma during the deposition of silicon nitride (SiNx) film. By this exposure, ITO or IZO can be easily reduced into its corresponding metallic element such as indium, which degrades the optical transmittance and the conductivity. In this study, SiNx was deposited onto ITO or IZO film, and the oxygen reduction of ITO or IZO during PECVD SiNx deposition was analyzed to clarify this phenomenon. The oxygen reduction during PECVD SiNx deposition is mainly induced by decomposed NH3 gas. However, the progress of ITO reduction is different from that of IZO reduction, due to the different atomic composition of In2O3 in the composite and the different critical temperature of reduction initiation between indium oxide, tin oxide, and zinc oxide.

Monitoring PMMA Elimination by Reactive Ion Etching from a Lamellar PS-b-PMMA Thin Film byex SituTEM Methods

2010 ◽  
Vol 43 (20) ◽  
pp. 8651-8655 ◽  
Author(s):  
Richard A. Farrell ◽  
Nikolay Petkov ◽  
Matthew T. Shaw ◽  
Vladimir Djara ◽  
Justin D. Holmes ◽  
...  
Keyword(s):  
Thin Film ◽  
Reactive Ion Etching ◽  
Ion Etching

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching
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