Process Characterization of PSG and BPSG Plasma Deposition

This study compared the gentrification processes in Cihangir and Tarlabasi. The dynamics of the gentrification process in Cihangir is compared with the vastly different gentrification process in Tarlabasi. Interpretations of gentrification are also included in this paper. The study analyzed the dynamics of the gentrification process in Cihangir, Istanbul (Turkey) to determine the extent of change during the process. Characterization of the Cihangir neighborhood, which distinguishes Cihangir from other gentrified urban areas, is another aspect of this study. The transformation of Cihangir is currently underway; it involves the revolution and renovation of land and buildings, which is known as gentrification. The gentrification process in Cihangir is affected by socio-economic and socio-cultural transformations. This paper examines gentrification in the Cihangir neighborhood, which has occurred spontaneously and supports the perpetuation of social diversity, which occurs in many urban areas. Although Istanbul’s Tarlabasi region exhibits geophysical characteristics that resemble the geophysical characteristics of Cihangir, Tarlabasi is affected by a completely different gentrification process, which is known as planned gentrification. In the context of this study, scholars question whether gentrification is “erasing the social geography of urban land and unique architectural pattern,” or if gentrification represents “the upgrading and renaissance of the urban land.” (Smith, 1996)

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Process Characterization of Sheet Metal Spinning by Means of Finite Elements

Sheet Metal 2007 - Key Engineering Materials ◽

10.4028/0-87849-437-5.637 ◽

2007 ◽

pp. 637-644

Author(s):

Gerd Sebastiani ◽

Alexander Brosius ◽

Werner Homberg ◽

Matthias Kleiner

Keyword(s):

Finite Elements ◽

Sheet Metal ◽

Process Characterization ◽

Metal Spinning

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Optical Characterization of AsxTe100−x Films Grown by Plasma Deposition Based on the Advanced Optimizing Envelope Method

Materials ◽

10.3390/ma13132981 ◽

2020 ◽

Vol 13 (13) ◽

pp. 2981 ◽

Cited By ~ 1

Author(s):

Dorian Minkov ◽

George Angelov ◽

Radi Nestorov ◽

Aleksey Nezhdanov ◽

Dmitry Usanov ◽

...

Keyword(s):

Refractive Index ◽

Extinction Coefficient ◽

Glass Substrate ◽

Plasma Deposition ◽

Optical Characterization ◽

The Other ◽

Semiconductor Film ◽

Average Thickness ◽

Envelope Method

Three AsxTe100−x films with different x and dissimilar average thickness d ¯ are characterized mainly from one interference transmittance spectrum T(λ = 300 to 3000 nm) of such film on a substrate based on the advanced optimizing envelope method (AOEM). A simple dual transformation of T(λ) is proposed and used for increasing the accuracy of computation of its envelopes T+(λ) and T−(λ) accounting for the significant glass substrate absorption especially for λ > 2500 nm. The refractive index n(λ) of As40Te60 and As98Te2 films is determined with a relative error <0.30%. As far as we know, the As80Te20 film is the only one with anomalous dispersion and the thickest, with estimated d ¯ = 1.1446 nm, ever characterized by an envelope method. It is also shown and explained why the extinction coefficient k(λ) of any of the three AsxTe100−x films is computed more accurately from the quantity Ti(λ) = [T+(λ)T−(λ)]0.5 compared to its commonly employed computation from T+(λ). The obtained results strengthen our conviction that the AOEM has a capacity for providing most accurate optical characterization of almost every dielectric or semiconductor film with d ¯ > 300 nm on a substrate, compared to all the other methods for characterization of such films only from T(λ).

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