The characterization of the dynamic arc-anode interaction and using plasma deposition of nanocomposites to tailor materials properties

2007 ◽  
Author(s):  
Joachim Heberlein
Keyword(s):  
Plasma Deposition ◽  
Materials Properties

Applications of Transmission Electron Microscopy in the Characterization of Metal Machinability

1968 ◽  
Vol 26 ◽  
pp. 442-443 ◽  
Author(s):  
L.E. Murr ◽  
A.B. Draper
Keyword(s):  
Electron Microscopy ◽  
State Physics ◽  
Test Material ◽  
Milling Machine ◽  
Rotary Table ◽  
Solid State Physics ◽  
Materials Properties ◽  
Transmission Electron ◽  
Selection Of

The industrial characterization of the machinability of metals and alloys has always been a very arbitrarily defined property, subject to the selection of various reference or test materials; and the adoption of rather naive and misleading interpretations and standards. However, it seems reasonable to assume that with the present state of knowledge of materials properties, and the current theories of solid state physics, more basic guidelines for machinability characterization might be established on the basis of the residual machined microstructures. This approach was originally pursued by Draper; and our presentation here will simply reflect an exposition and extension of this research.The technique consists initially in the production of machined chips of a desired test material on a horizontal milling machine with the workpiece (specimen) mounted on a rotary table vice. A single cut of a specified depth is taken from the workpiece (0.25 in. wide) each at a new tool location.

scholarly journals Optical Characterization of AsxTe100−x Films Grown by Plasma Deposition Based on the Advanced Optimizing Envelope Method

Materials ◽  
2020 ◽  
Vol 13 (13) ◽  
pp. 2981 ◽  
Author(s):  
Dorian Minkov ◽  
George Angelov ◽  
Radi Nestorov ◽  
Aleksey Nezhdanov ◽  
Dmitry Usanov ◽  
...  
Keyword(s):  
Refractive Index ◽  
Extinction Coefficient ◽  
Glass Substrate ◽  
Plasma Deposition ◽  
Optical Characterization ◽  
The Other ◽  
Semiconductor Film ◽  
Average Thickness ◽  
Envelope Method

Three AsxTe100−x films with different x and dissimilar average thickness d ¯ are characterized mainly from one interference transmittance spectrum T(λ = 300 to 3000 nm) of such film on a substrate based on the advanced optimizing envelope method (AOEM). A simple dual transformation of T(λ) is proposed and used for increasing the accuracy of computation of its envelopes T+(λ) and T−(λ) accounting for the significant glass substrate absorption especially for λ > 2500 nm. The refractive index n(λ) of As40Te60 and As98Te2 films is determined with a relative error <0.30%. As far as we know, the As80Te20 film is the only one with anomalous dispersion and the thickest, with estimated d ¯ = 1.1446 nm, ever characterized by an envelope method. It is also shown and explained why the extinction coefficient k(λ) of any of the three AsxTe100−x films is computed more accurately from the quantity Ti(λ) = [T+(λ)T−(λ)]0.5 compared to its commonly employed computation from T+(λ). The obtained results strengthen our conviction that the AOEM has a capacity for providing most accurate optical characterization of almost every dielectric or semiconductor film with d ¯ > 300 nm on a substrate, compared to all the other methods for characterization of such films only from T(λ).

Low frequency plasma deposition and characterization of Si1−xGex:H,F films

2004 ◽  
Vol 338-340 ◽  
pp. 91-96 ◽  
Author(s):  
R. Ambrosio ◽  
A. Torres ◽  
A. Kosarev ◽  
A. Ilinski ◽  
C. Zúñiga ◽  
...  
Keyword(s):  
Plasma Deposition ◽  
Low Frequency ◽  
Frequency Plasma

CHARACTERIZATION OF TAPIOCA STARCH PLASTICIZED BY 1-ETHYL-3-METHYLIMIDAZOLIUM ACETATE

2017 ◽  
Vol 79 (5-3) ◽  
Author(s):  
Shajaratuldur Ismail ◽  
Nurlidia Mansor ◽  
Zakaria Man ◽  
Khairun Azizi Azizli
Keyword(s):  
Thermal Degradation ◽  
Crystalline Structure ◽  
Xrd Analysis ◽  
Thermoplastic Starch ◽  
Thermal And Mechanical Properties ◽  
Materials Properties ◽  
Synthetic Materials ◽  
Water Ratio ◽  
Vital Parameters

Starch is one of natural materials that been used for producing biodegradable materials. The starch-based materials are produced through a process known as gelatinization with the presence of plasticizer and elevated temperature. Properties of starch-based materials are lacking in terms of viscosity, water absorption, thermal and mechanical properties compare with synthetic materials. Researchers are involved in finding ways for improvement of starch-based materials properties and one of that is introducing new plasticizer. 1-ethyl-3-methylimidazolium acetate, [Emim][OAc] is an ionic liquid that used as plasticizer to produce thermoplastic starch. Starch plasticized by [Emim][OAc] were prepared with different total plasticizer contents (50%,70%) and [Emim][OAc]/water ratio (1:6,1:4,2:3 wt%). The thermoplastic starches were characterized in terms of morphology, crystalline structure and thermal degradation. The results showed that 70% of total plasticizer contents were mixed well during gelatinization process. [Emim][OAc] contributed to granule disruption as shown by SEM. Based on the XRD analysis, it was shown that thermoplastic starch at 70% total plasticizer contents and 1:4 wt% ratio of [Emim][OAc]/water, caused disruption of the A-type crystalline structure, generated VH-type crystalline structure and thus increased the mobility of the amorphous starch. The presence of [Emim][OAc] promotes the thermal degradation of starch molecules as described by TGA. Therefore, plasticizer contents and [Emim][OAc]/water ratio are vital parameters that influences the properties of thermoplastic starch.

Characterization of ion-exchange membrane materials: Properties vs structure

2008 ◽  
Vol 139 (1-2) ◽  
pp. 3-28 ◽  
Author(s):  
N.P. Berezina ◽  
N.A. Kononenko ◽  
O.A. Dyomina ◽  
N.P. Gnusin
Keyword(s):  
Ion Exchange ◽  
Ion Exchange Membrane ◽  
Membrane Materials ◽  
Materials Properties ◽  
Exchange Membrane

Characterization of Deposited Films and the Electron Beam Generated in the Pulsed Plasma Deposition Gun

2011 ◽  
Vol 50 (8S1) ◽  
pp. 08JD03 ◽  
Author(s):  
Dmitry Yarmolich ◽  
Petr Nozar ◽  
Svetlana Gleizer ◽  
Yakov E. Krasik ◽  
Giuseppe Mittica ◽  
...  
Keyword(s):  
Electron Beam ◽  
Plasma Deposition ◽  
Pulsed Plasma ◽  
Pulsed Plasma Deposition ◽  
Deposited Films

Reactive synthesis and characterization of using low-pressure plasma deposition and 100% methane

1995 ◽  
Vol 32 (5) ◽  
pp. 689-693 ◽  
Author(s):  
D.E. Lawrynowicz ◽  
J. Wolfenstine ◽  
E.J. Lavernia ◽  
S.R. Nutt ◽  
D.E. Bailey ◽  
...  
Keyword(s):  
Plasma Deposition ◽  
Low Pressure ◽  
Synthesis And Characterization ◽  
Reactive Synthesis ◽  
Pressure Plasma ◽  
Low Pressure Plasma

scholarly journals Microstructure and Materials Properties of Understoichiometric TiBx Thin Films Grown by HiPIMS

2020 ◽  
Author(s):  
Jimmy Thörnberg ◽  
Justinas Palisaitis ◽  
Niklas Hellgren ◽  
Fedor Klimashin ◽  
Naureen Ghafoor ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Fracture Toughness ◽  
Planar Defects ◽  
Materials Properties ◽  
Apparent Fracture Toughness ◽  
Research Article ◽  
Tissue Phase

<p>In the present research article we report synthesis of TiB<sub>x</sub>, 1.43<i>n-situ</i> mass- and energy-spectroscopy is used to explain the obtained compositional range. Excess B in overstoichiometric TiB<i><sub>x</sub></i><sub> </sub>thin films from DCMS results in a hardness up to 37.7±0.8 GPa, attributed to the formation of an amorphous B-rich tissue phase separating stoichiometric TiB<sub>2</sub> columnar structures. With a particular focus on characterization of the understoichiometric samples, we show that understoichiometric TiB<sub>1.43</sub> thin films synthesized by HiPIMS exhibit a superior hardness of 43.9±0.9 GPa, where the deficiency of B is found to be accommodated by Ti planar defects. The apparent fracture toughness, electrical resistivity and thermal conductivity of the same sample is 4.2±0.1 MPa√m, 367±7 μΩ·cm and 5.1 W/(m.K), respectively, as compared to corresponding values for overstoichiometric TiB<sub>2.20</sub> DCMS thin film samples of 3.2±0.1 MPa√m, 309±4 μΩ·cm and 3.0 W/(m.K). </p>

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