Thermal Desorption Studies of Silicon Dioxide Deposited by Atmospheric‐Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone

1993 ◽  
Vol 140 (6) ◽  
pp. 1722-1727 ◽  
Author(s):  
Katsumi Murase ◽  
Norikuni Yabumoto ◽  
Yukio Komine
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Thermal Desorption ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical

Thermal desorption spectra of SiO2 films deposited on Si and on thermal SiO2 by tetraethylorthosilicate/O3 atmospheric-pressure chemical vapor deposition

1999 ◽  
Vol 85 (10) ◽  
pp. 7140-7145 ◽  
Author(s):  
Degang Cheng ◽  
Koji Tsukamoto ◽  
Hiroshi Komiyama ◽  
Yuko Nishimoto ◽  
Noboru Tokumasu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Desorption ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Sio2 Films ◽  
Pressure Chemical

Low-pressure chemical vapor deposition of silicon dioxide using diethylsilane

1993 ◽  
Vol 5 (12) ◽  
pp. 1710-1714 ◽  
Author(s):  
R. A. Levy ◽  
J. M. Grow ◽  
G. S. Chakravarthy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

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