Characteristics of Silicon Dioxide Films on Patterned Substrates Prepared by Atmospheric‐Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone

Silicon Dioxide ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Patterned Substrates ◽

Silicon Dioxide Films ◽

Large temperature range model for the atmospheric pressure chemical vapor deposition of silicon dioxide films on thermosensitive substrates

Chemical Engineering Research and Design ◽

10.1016/j.cherd.2020.07.007 ◽

2020 ◽

Vol 161 ◽

pp. 146-158 ◽

Cited By ~ 1

Author(s):

Konstantina Christina Topka ◽

George Alexander Chliavoras ◽

François Senocq ◽

Hugues Vergnes ◽

Diane Samelor ◽

...

Keyword(s):

Silicon Dioxide ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Large Temperature ◽

Temperature Range ◽

Silicon Dioxide Films ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Properties of silicon dioxide films prepared by low-pressure chemical vapor deposition from tetraethylorthosilicate

10.1116/1.584937 ◽

1990 ◽

Vol 8 (6) ◽

pp. 1177 ◽

Cited By ~ 32

Author(s):

S. Rojas

Keyword(s):

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Dioxide Films ◽

Characteristics of Silicon Dioxide Film Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone with Alcohol Addition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.2182 ◽

1995 ◽

Vol 34 (Part 1, No. 4B) ◽

pp. 2182-2190 ◽

Cited By ~ 3

Author(s):

Koichi Ikeda ◽

Satoshi Nakayama ◽

Masahiko Maeda

Keyword(s):

Silicon Dioxide ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Silicon Dioxide Film ◽

Pressure Chemical ◽

Dioxide Film

Low Pressure Chemical Vapor Deposition of Silicon Dioxide Films by Thermal Decomposition of Tetra‐alkoxysilanes

Journal of The Electrochemical Society ◽

10.1149/1.2044122 ◽

1995 ◽

Vol 142 (2) ◽

pp. 676-682 ◽

Cited By ~ 20

Author(s):

Eui Jung Kim ◽

William N. Gill

Keyword(s):

Thermal Decomposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Dioxide Films ◽

Thermal Desorption Studies of Silicon Dioxide Deposited by Atmospheric‐Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone

Journal of The Electrochemical Society ◽

10.1149/1.2221631 ◽

1993 ◽

Vol 140 (6) ◽

pp. 1722-1727 ◽

Cited By ~ 23

Author(s):

Katsumi Murase ◽

Norikuni Yabumoto ◽

Yukio Komine

Keyword(s):

Silicon Dioxide ◽

Thermal Desorption ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.370523 ◽

1999 ◽

Vol 85 (10) ◽

pp. 7130-7134 ◽

Cited By ~ 46

Author(s):

Y. S. Ju ◽

K. E. Goodson

Keyword(s):

Silicon Dioxide ◽

Transport Properties ◽

Vapor Deposition ◽

Thermal Transport ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Dioxide Films ◽

Thermal Transport Properties ◽

Highly stable silicon dioxide films deposited by means of rapid thermal low‐pressure chemical vapor deposition onto InP

Applied Physics Letters ◽

10.1063/1.105950 ◽

1991 ◽

Vol 59 (20) ◽

pp. 2552-2554 ◽

Cited By ~ 3

Author(s):

A. Katz ◽

A. Feingold ◽

U. K. Chakrabarti ◽

S. J. Pearton ◽

K. S. Jones

Keyword(s):

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Dioxide Films ◽

Threshold voltage shift of amorphous silicon thin film transistors with atmospheric pressure chemical vapor deposition silicon dioxide

Applied Physics Letters ◽

10.1063/1.111615 ◽

1994 ◽

Vol 64 (18) ◽

pp. 2362-2363 ◽

Cited By ~ 1

Author(s):

Jeong Hyun Kim ◽

Eui Yeol Oh ◽

Jung Kee Yoon ◽

Yong Suk Park ◽

Chan Hee Hong

Keyword(s):

Thin Film ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Thin Film Transistors ◽

Chemical Vapor ◽

Silicon Thin Film ◽

Threshold Voltage Shift ◽

Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.1385 ◽

1994 ◽

Vol 33 (Part 1, No. 3A) ◽

pp. 1385-1389 ◽

Cited By ~ 14

Author(s):

Katsumi Murase

Keyword(s):

Dielectric Constant ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Preparation of silicon dioxide films by low-pressure chemical vapor deposition on dense and porous alumina substrates

Chemical Engineering Science ◽

10.1016/0009-2509(92)85141-w ◽

1992 ◽

Vol 47 (15-16) ◽

pp. 3925-3934 ◽

Cited By ~ 12

Author(s):

C.E. Megiris ◽

J.H.E. Glezer

Keyword(s):

Silicon Dioxide ◽

Vapor Deposition ◽

Porous Alumina ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Dioxide Films ◽