Excimer Laser Crystallization of Amorphous Silicon Film with Artificially Designed Spatial Intensity Profile Beam

2019 ◽  
Vol 3 (8) ◽  
pp. 149-156
Author(s):  
Eok Su Kim ◽  
Ki-Bum Kim ◽  
Myung-Kwan Ryu ◽  
Hyuk Soon Kwon ◽  
Cheon-Hong Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Silicon Film ◽  
Intensity Profile ◽  
Laser Crystallization ◽  
Amorphous Silicon Film ◽  
Spatial Intensity ◽  
Excimer Laser Crystallization

A Simple Lateral Grain Growth of Poly-Si by Single Excimer Laser Crystallization of Amorphous Silicon Film Deposited on Polygon Shaped Trench

2003 ◽  
Vol 762 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Su-Hyuk Kang ◽  
Hee-Sun Shin ◽  
Min-Koo Han
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Excimer Laser ◽  
Silicon Film ◽  
Acute Angle ◽  
Molten Silicon ◽  
Laser Crystallization ◽  
Amorphous Silicon Film ◽  
Excimer Laser Irradiation ◽  
Excimer Laser Crystallization

AbstractA simple lateral grain growth of polysilicon employing single excimer laser irradiation is proposed. In order to increase the size of silicon grain and to control the location of the large lateral grain, the oxide trench is employed under the amorphous silicon film in the proposed method. The proposed oxide trench, which is shaped like a triangle or a polygon with an acute angle, induces temperature gradient on the molten silicon film during the solidification. It was verified by SEM that about 2 μm-long silicon grains are successfully achieved near the oxide trench edge and the locations of lateral grains are controlled by the angular points of the diagram.

Light-Absorptive Underlayer-Enhanced Superlateral Growth in Excimer Laser Crystallization of Amorphous Silicon Film

2007 ◽  
Vol 46 (4A) ◽  
pp. 1466-1468 ◽  
Author(s):  
Wenchang Yeh ◽  
Hsiangen Huang ◽  
Ingchieh Niu ◽  
Chienchou Chen
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Silicon Film ◽  
Laser Crystallization ◽  
Amorphous Silicon Film ◽  
Excimer Laser Crystallization

Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C

2007 ◽  
Vol 46 (3B) ◽  
pp. 1245-1249 ◽  
Author(s):  
Ming He ◽  
Ryoichi Ishihara ◽  
Ellen J. J. Neihof ◽  
Yvonne van Andel ◽  
Hugo Schellevis ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Process Temperature ◽  
Laser Crystallization ◽  
Amorphous Silicon Film ◽  
Excimer Laser Crystallization

Insight into excimer laser crystallization exploiting ellipsometry: Effect of silicon film precursor

2007 ◽  
Vol 515 (19) ◽  
pp. 7508-7512 ◽  
Author(s):  
Maria Losurdo ◽  
Maria M. Giangregorio ◽  
Alberto Sacchetti ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Silicon Film ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Insight Into

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

2015 ◽  
Vol 1120-1121 ◽  
pp. 361-368
Author(s):  
Li Jie Deng ◽  
Wei He ◽  
Zheng Ping Li
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Silicon Film ◽  
Threshold Energy ◽  
Nanocrystalline Silicon ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm2. The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.

Selective Area Excimer‐Laser Crystallization of Amorphous Silicon Thin Films

1999 ◽  
Vol 146 (12) ◽  
pp. 4605-4610 ◽  
Author(s):  
John Viatella ◽  
Seung‐Mahn Lee ◽  
Rajiv K. Singh
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Selective Area ◽  
Excimer Laser Crystallization

Effects of Excimer Laser Annealing Process on the Ni-Sputtered Amorphous Silicon Film

2010 ◽  
Vol 13 (10) ◽  
pp. H346 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin ◽  
Hoonkee Min ◽  
HoKyoon Chung ◽  
Sangsoo Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Amorphous Silicon Film

Excimer laser crystallization of amorphous silicon carbide produced by ion implantation

2003 ◽  
Vol 205 (1-4) ◽  
pp. 240-248 ◽  
Author(s):  
A. Hedler ◽  
S. Urban ◽  
F. Falk ◽  
H. Hobert ◽  
W. Wesch
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Amorphous Silicon Carbide ◽  
Excimer Laser Crystallization
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