Characterization of Annealing Effects in Ultra-Shallow Boron-Implanted Si Wafers using Raman Scattering
2019 ◽
Vol 235
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pp. 121726
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1998 ◽
Vol 189-190
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pp. 435-438
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Keyword(s):
2008 ◽
Vol 873
(1-3)
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pp. 149-159
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2015 ◽
Vol 1
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pp. 8
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Keyword(s):