Characterization of Annealing Effects in Ultra-Shallow Boron-Implanted Si Wafers using Raman Scattering

2019 ◽  
Vol 19 (1) ◽  
pp. 127-133 ◽  
Author(s):  
Masashi Fukumoto ◽  
Hiroaki Minami ◽  
Noriyuki Hasuike ◽  
Hiroshi Harima ◽  
Masahiro Yoshimoto ◽  
...  
1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  

2015 ◽  
Vol 1 ◽  
pp. 8 ◽  
Author(s):  
Juan Huguet-Garcia ◽  
Aurélien Jankowiak ◽  
Sandrine Miro ◽  
Renaud Podor ◽  
Estelle Meslin ◽  
...  

The Analyst ◽  
2013 ◽  
Vol 138 (18) ◽  
pp. 5371 ◽  
Author(s):  
Denys Naumenko ◽  
Valentinas Snitka ◽  
Elena Serviene ◽  
Ingrida Bruzaite ◽  
Boris Snopok

Sign in / Sign up

Export Citation Format

Share Document