Characterization of the ion-amorphization process and thermal annealing effects on third generation SiC fibers and 6H-SiC

ABSTRACTOptical and infrared reflection spectra for Bi implanted silica are reported as a function of dose and thermal annealing. A series of high purity silica samples were implanted with Bi ions at an energy of 350 KeV. Doses were 1 × 1016 and 1.0 × 1017ions/cm2 at 5μamps/cm2. The samples were subsequently thermally annealed at 400, 600 and 800 C. The optical absorption from 6.2 to 1.8 eV and infrared reflectance from 5000 to 450 cm”−1 were measured before and after annealing. Effects of thermal annealing are strongly dependent on Bi content.

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In situ characterization of ion-irradiation enhanced creep of third generation Tyranno SA3 SiC fibers

Journal of Materials Research ◽

10.1557/jmr.2014.412 ◽

2015 ◽

Vol 30 (9) ◽

pp. 1572-1582 ◽

Cited By ~ 5

Author(s):

Juan Huguet-Garcia ◽

Aurélien Jankowiak ◽

Sandrine Miro ◽

Thierry Vandenberghe ◽

Clara Grygiel ◽

...

Keyword(s):

Ion Irradiation ◽

Third Generation ◽

In Situ Characterization ◽

Sic Fibers ◽

Image Position

Abstract

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Deposition of Polycrystalline ZnO Films by Two-Step Method and Characterization of Thermal Annealing Effects

MRS Proceedings ◽

10.1557/proc-720-h3.13 ◽

2002 ◽

Vol 720 ◽

Author(s):

Jin-Bock Lee ◽

Myung-Ho Lee ◽

Hye-Jung Lee ◽

Jin-Seok Park

Keyword(s):

Thermal Annealing ◽

Texture Coefficient ◽

Rf Magnetron Sputtering ◽

Film Deposition ◽

Zno Thin Films ◽

High Resistivity ◽

Zno Films ◽

Step Method ◽

Annealing Effects

AbstractPolycrystalline ZnO thin films were deposited on SiO2/Si(100) substrate using RF magnetron sputtering. The film deposition performed in this work was composed of following two procedures; the 1st-deposition for 30 min without oxygen at 100 W and the 2nd-deposition with oxygen in the range O2/(Ar+O2) = 10∼50 %. Deposited ZnO films revealed a strongly c-axis preferred-orientation (the corresponding texture coefficient ∼ 100 %) as well as a high resistivity (> 107 Ωcm). It was also observed that the crystallite size of ZnO was noticeably increased by thermal-annealing.

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Characterization of Thermal Annealing Effects on the Evolution of Coke Carbon Structure Using Raman Spectroscopy and X-ray Diffraction

ISIJ International ◽

10.2355/isijinternational.46.1165 ◽

2006 ◽

Vol 46 (8) ◽

pp. 1165-1170 ◽

Cited By ~ 43

Author(s):

Masahiro Kawakami ◽

Haruki Kanba ◽

Kazunori Sato ◽

Toshihide Takenaka ◽

Sushil Gupta ◽

...

Keyword(s):

Raman Spectroscopy ◽

Thermal Annealing ◽

X Ray Diffraction ◽

Carbon Structure ◽

X Ray ◽

Annealing Effects

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Computer Simulation of Thermal Annealing Effects on Self Implanted Silicon

MRS Proceedings ◽

10.1557/proc-373-463 ◽

1994 ◽

Vol 373 ◽

Author(s):

G. DE Sandre ◽

L. Colombo ◽

D. Maric

Keyword(s):

Molecular Dynamics ◽

Thermal Annealing ◽

Room Temperature ◽

Annealing Temperature ◽

Tight Binding ◽

Defect Distribution ◽

Amorphous Network ◽

Different Temperatures ◽

Annealing Effects

AbstractWe investigate the effects of thermal annealing on the structural, elastic and electronic properties of self implanted silicon by tight binding molecular dynamics. The irradiated samples, after a careful relaxation at room temperature, are annealed at different temperatures and for different times and, finally, their properties are carefully monitored during constant temperature simulations. We further provide a characterization of the chemical bonding in the amorphous network and show the evolution of the point defect distribution against maximum annealing temperature.

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Characterization of radiation damage and thermal annealing effects on thallium bromide nuclear radiation detectors

1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255) ◽

10.1109/nssmic.1998.774303 ◽

2002 ◽

Author(s):

K. Hitomi ◽

T. Shoji ◽

T. Suehiro ◽

Y. Hiratate

Keyword(s):

Radiation Damage ◽

Thermal Annealing ◽

Radiation Detectors ◽

Nuclear Radiation ◽

Thallium Bromide ◽

Annealing Effects ◽

Nuclear Radiation Detectors

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In situE-SEM and TEM observations of the thermal annealing effects on ion-amorphized 6H-SiC single crystals and nanophased SiC fibers

physica status solidi (b) ◽

10.1002/pssb.201400139 ◽

2014 ◽

Vol 252 (1) ◽

pp. 149-152 ◽

Cited By ~ 6

Author(s):

Juan Huguet-Garcia ◽

Aurelien Jankowiak ◽

Sandrine Miro ◽

Renaud Podor ◽

Estelle Meslin ◽

...

Keyword(s):

Single Crystals ◽

Thermal Annealing ◽

Sic Fibers ◽

Sem And Tem ◽

Annealing Effects

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TEM characterization of reaction zone in a SiC fiber-reinforced titanium alloy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100105758 ◽

1988 ◽

Vol 46 ◽

pp. 738-739

Author(s):

G. Das ◽

R. E. Omlor

Keyword(s):

Titanium Alloys ◽

Reaction Zone ◽

Carbon Layer ◽

Fiber Reinforced ◽

Reaction Products ◽

Sic Fibers ◽

Sic Fiber ◽

The Matrix ◽

Immense Potential

Fiber reinforced titanium alloys hold immense potential for applications in the aerospace industry. However, chemical reaction between the fibers and the titanium alloys at fabrication temperatures leads to the formation of brittle reaction products which limits their development. In the present study, coated SiC fibers have been used to evaluate the effects of surface coating on the reaction zone in the SiC/IMI829 system.IMI829 (Ti-5.5A1-3.5Sn-3.0Zr-0.3Mo-1Nb-0.3Si), a near alpha alloy, in the form of PREP powder (-35 mesh), was used a茸 the matrix. CVD grown AVCO SCS-6 SiC fibers were used as discontinuous reinforcements. These fibers of 142μm diameter contained an overlayer with high Si/C ratio on top of an amorphous carbon layer, the thickness of the coating being ∽ 1μm. SCS-6 fibers, broken into ∽ 2mm lengths, were mixed with IMI829 powder (representing < 0.1vol%) and the mixture was consolidated by HIP'ing at 871°C/0. 28GPa/4h.

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