Raman Scattering Characterization of Annealing Effects in Ultra-Shallow
Boron-Implanted Si Wafers
2019 ◽
Vol 19
(1)
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pp. 127-133
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Masashi Fukumoto
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Hiroaki Minami
◽
Noriyuki Hasuike
◽
Hiroshi Harima
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Masahiro Yoshimoto
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...
2019 ◽
Vol 235
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pp. 121726
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Ronghui Yuan
◽
Huihui He
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Jinfei Huang
◽
Chang Su
1998 ◽
Vol 189-190
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pp. 435-438
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Hiroshi Harima
◽
Toshiaki Inoue
◽
Shin-ichi Nakashima
◽
Hajime Okumura
◽
Yuuki Ishida
◽
...
1995 ◽
Vol 61
(6)
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pp. 581-584
◽
M. M. Tilleman
◽
R. Grasso
2016 ◽
Vol 7
(4)
◽
pp. 1284
◽
Zi Wang
◽
Wei Zheng
◽
Stephen Chin-Ying Hsu
◽
Zhiwei Huang
2008 ◽
Vol 873
(1-3)
◽
pp. 149-159
◽
Silvia A. Centeno
◽
Jacob Shamir
Juan Huguet-Garcia
◽
Aurélien Jankowiak
◽
Sandrine Miro
◽
Renaud Podor
◽
Estelle Meslin
◽
...
2013 ◽
Vol 138
(18)
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pp. 5371
◽
Denys Naumenko
◽
Valentinas Snitka
◽
Elena Serviene
◽
Ingrida Bruzaite
◽
Boris Snopok
1988 ◽
Vol 63
(8)
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pp. 2669-2673
◽
D. J. Olego
◽
H. Baumgart
2006 ◽
Vol 249
(1-2)
◽
pp. 136-139
Y. Mizuki
◽
A. Onoue
◽
K. Kuriyama
◽
M. Hasegawa
◽
I. Sakamoto