Mechanism of Silicon Carbide Film Deposition at Room Temperature Using Monomethylsilane Gas

2011 ◽  
Vol 158 (4) ◽  
pp. H352 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yusuke Ando
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Film Deposition ◽  
Silicon Carbide Film

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor

2018 ◽  
Vol 924 ◽  
pp. 96-99
Author(s):  
Kohei Shioda ◽  
Keisuke Kurashima ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shinichi Mitani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Film ◽  
Film Surface ◽  
Chemical Vapor ◽  
Pyrolytic Carbon ◽  
Film Deposition ◽  
Carbon Surface ◽  
Cleaning Process ◽  
Silicon Carbide Film ◽  
Carbon Coated

In order to develop a quick and practical cleaning process for the silicon carbide chemical vapor deposition reactor, the pyrolytic carbon-coated susceptor was used. The 30-μm-thick silicon carbide film was formed on the susceptor; the film was cleaning by chlorine trifluoride gas at 460 °C for 15 min. The remained fluorine was removed by the annealing at 900 °C in ambient hydrogen. The pyrolytic carbon surface did not suffer from any damage, because the pyrolytic carbon film surface morphology after the cleaning process was the same as that before the silicon carbide film deposition.

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

2013 ◽  
Vol 740-742 ◽  
pp. 235-238
Author(s):  
Hitoshi Habuka ◽  
Masaki Tsuji ◽  
Yusuke Ando
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Film Formation ◽  
Argon Plasma ◽  
Chemical Vapor ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film ◽  
Silicon Carbon ◽  
Thin Film Formation

The silicon carbide thin film formation process, completely performed at room temperature, was developed by argon plasma and a chemical vapor deposition using monomethylsilane gas. Silicon-carbon bonds were found to exist in the obtained film, the surface of which could remain specular after exposure to hydrogen chloride gas at 800 oC. The silicon dangling bonds formed at the silicon surface by the argon plasma are considered to react with the monomethylsilane molecules at room temperature to produce the amorphous silicon carbide film.

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

2007 ◽  
Vol 300 (2) ◽  
pp. 374-381 ◽  
Author(s):  
Hitoshi Habuka ◽  
Mayuka Watanabe ◽  
Yutaka Miura ◽  
Mikiya Nishida ◽  
Takashi Sekiguchi
Keyword(s):  
Silicon Carbide ◽  
Hydrogen Chloride ◽  
Polycrystalline Silicon ◽  
Film Deposition ◽  
Silicon Carbide Film ◽  
Polycrystalline Silicon Carbide

Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor

2015 ◽  
Vol 821-823 ◽  
pp. 125-128 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yusuke Fukumoto ◽  
Kosuke Mizuno ◽  
Yuuki Ishida ◽  
Toshiyuki Ohno
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Coating Film ◽  
Cleaning Process ◽  
Contact Points ◽  
Silicon Carbide Film ◽  
Silicon Carbide Particles ◽  
Coated Carbon ◽  
Carbide Particles

The silicon carbide CVD reactor cleaning process was studied by means of detaching silicon carbide particles, which was formed on the silicon carbide coated carbon susceptor surface during the silicon carbide film deposition. The contact points between the particles and the susceptor surface were etched using chlorine trifluoride gas at temperatures lower than 290 °C for 120 min. During this process, the carbon susceptor covered with the silicon carbide coating film suffered from little damage while achieving cleaning.

Silicon carbide film deposition at low temperatures using monomethylsilane gas

2010 ◽  
Vol 204 (9-10) ◽  
pp. 1432-1437 ◽  
Author(s):  
Hitoshi Habuka ◽  
Hiroshi Ohmori ◽  
Yusuke Ando
Keyword(s):  
Silicon Carbide ◽  
Low Temperatures ◽  
Film Deposition ◽  
Silicon Carbide Film

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

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