Langasite Crystal Microbalance for Development of Reactive Surface Preparation of Silicon Carbide Film Deposition from Monomethylsilane Gas

2011 ◽  
Vol 50 (9) ◽  
pp. 096505 ◽  
Author(s):  
Hitoshi Habuka ◽  
Ken-Ichi Kote
Keyword(s):  
Silicon Carbide ◽  
Surface Preparation ◽  
Film Deposition ◽  
Reactive Surface ◽  
Silicon Carbide Film

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor

2018 ◽  
Vol 924 ◽  
pp. 96-99
Author(s):  
Kohei Shioda ◽  
Keisuke Kurashima ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shinichi Mitani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Film ◽  
Film Surface ◽  
Chemical Vapor ◽  
Pyrolytic Carbon ◽  
Film Deposition ◽  
Carbon Surface ◽  
Cleaning Process ◽  
Silicon Carbide Film ◽  
Carbon Coated

In order to develop a quick and practical cleaning process for the silicon carbide chemical vapor deposition reactor, the pyrolytic carbon-coated susceptor was used. The 30-μm-thick silicon carbide film was formed on the susceptor; the film was cleaning by chlorine trifluoride gas at 460 °C for 15 min. The remained fluorine was removed by the annealing at 900 °C in ambient hydrogen. The pyrolytic carbon surface did not suffer from any damage, because the pyrolytic carbon film surface morphology after the cleaning process was the same as that before the silicon carbide film deposition.

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

2007 ◽  
Vol 300 (2) ◽  
pp. 374-381 ◽  
Author(s):  
Hitoshi Habuka ◽  
Mayuka Watanabe ◽  
Yutaka Miura ◽  
Mikiya Nishida ◽  
Takashi Sekiguchi
Keyword(s):  
Silicon Carbide ◽  
Hydrogen Chloride ◽  
Polycrystalline Silicon ◽  
Film Deposition ◽  
Silicon Carbide Film ◽  
Polycrystalline Silicon Carbide

Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor

2015 ◽  
Vol 821-823 ◽  
pp. 125-128 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yusuke Fukumoto ◽  
Kosuke Mizuno ◽  
Yuuki Ishida ◽  
Toshiyuki Ohno
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Coating Film ◽  
Cleaning Process ◽  
Contact Points ◽  
Silicon Carbide Film ◽  
Silicon Carbide Particles ◽  
Coated Carbon ◽  
Carbide Particles

The silicon carbide CVD reactor cleaning process was studied by means of detaching silicon carbide particles, which was formed on the silicon carbide coated carbon susceptor surface during the silicon carbide film deposition. The contact points between the particles and the susceptor surface were etched using chlorine trifluoride gas at temperatures lower than 290 °C for 120 min. During this process, the carbon susceptor covered with the silicon carbide coating film suffered from little damage while achieving cleaning.

Silicon carbide film deposition at low temperatures using monomethylsilane gas

2010 ◽  
Vol 204 (9-10) ◽  
pp. 1432-1437 ◽  
Author(s):  
Hitoshi Habuka ◽  
Hiroshi Ohmori ◽  
Yusuke Ando
Keyword(s):  
Silicon Carbide ◽  
Low Temperatures ◽  
Film Deposition ◽  
Silicon Carbide Film
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