(Invited) Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM)

2021 ◽  
Vol 102 (2) ◽  
pp. 113-116
Author(s):  
Abhijeet Joshi ◽  
Gianluca Rengo ◽  
Clement Porret ◽  
Kun-Lin Lin ◽  
Chia-He Chang ◽  
...  
Author(s):  
James Tomaszewski ◽  
Richard Branam ◽  
William Hargus ◽  
Taylor Matlock

2007 ◽  
Vol 42 (1-6) ◽  
pp. 259-264 ◽  
Author(s):  
G. Brauer ◽  
W. Anwand ◽  
W. Skorupa ◽  
J. Kuriplach ◽  
O. Melikhova ◽  
...  

2020 ◽  
pp. 19-1-19-12
Author(s):  
Olof Hultin ◽  
Kristian Storm ◽  
Lars Samuelson
Keyword(s):  

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.


2020 ◽  
Vol 97 (3) ◽  
pp. 75-80
Author(s):  
Pranav Ramesh ◽  
Krishna C. Saraswat ◽  
Abhijeet Joshi ◽  
Bulent M Basol ◽  
Larry Wang ◽  
...  

2018 ◽  
Author(s):  
M. Fadone ◽  
V. Antoni ◽  
D. Aprile ◽  
G. Chitarin ◽  
A. Fassina ◽  
...  

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4163
Author(s):  
Avi Karsenty

A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized technical manuals and focused scientific reviews, all published several decades ago, this up-to-date review paper presents important advantages and novelties: Large coverage of all domains and applications, clear orientation to the nanoscale dimensions, extended bibliography of almost one hundred fifty recent references, review of selected analytical models, summary tables and phenomena schematics. Moreover, the review includes a lateral examination of the integrated Hall Effect per sub-classification of subjects. Among others, the following sub-reviews are presented: Main existing macro/micro/nanoscale devices, materials and elements used for the fabrication, analytical models, numerical complementary models and tools used for simulations, and technological challenges to overcome in order to implement the effect in nanotechnology. Such an up-to-date review may serve the scientific community as a basis for novel research oriented to new nanoscale devices, modules, and Process Development Kit (PDK) markets.


2002 ◽  
Vol 239 (1-3) ◽  
pp. 343-345 ◽  
Author(s):  
Hae-Seung Lee ◽  
Sug-Bong Choe ◽  
Sung-Chul Shin ◽  
Cheol Gi Kim

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