Effect of Process Gases on Fabricating Tapered Through-Silicon vias by Continuous SF6/O2/Ar Plasma Etching

2012 ◽  
Vol 1 (3) ◽  
pp. P107-P116 ◽  
Author(s):  
Pradeep Dixit ◽  
Sami Vähänen ◽  
Jaakko Salonen ◽  
Philippe Monnoyer
Author(s):  
Ingrid De Wolf ◽  
Ahmad Khaled ◽  
Martin Herms ◽  
Matthias Wagner ◽  
Tatjana Djuric ◽  
...  

Abstract This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs), used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz- SAM), which not only allows detection of defects like voids, cracks and delamination, but also the visualization of Rayleigh waves. GHz-SAM can provide information on voids, delamination and possibly stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress anisotropy in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.


2012 ◽  
Vol 11 (1) ◽  
pp. 8-11 ◽  
Author(s):  
Davide Sacchetto ◽  
Michael Zervas ◽  
Yuksel Temiz ◽  
Giovanni De Micheli ◽  
Yusuf Leblebici

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