A Perovskite-Type Lanthanum Cobaltite Thin Film Synthesized via an Electrochemical Route and Its Application in SOFC Interconnects

2015 ◽  
Vol 162 (14) ◽  
pp. F1549-F1554 ◽  
Author(s):  
Beom-Kyeong Park ◽  
Rak-Hyun Song ◽  
Seung-Bok Lee ◽  
Tak-Hyoung Lim ◽  
Seok-Joo Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Lanthanum Cobaltite ◽  
Perovskite Type

Perovskite-Type Oxide Thin Film Integrated Fiber Optic Sensor for High-Temperature Hydrogen Measurement

2009 ◽  
Vol 81 (18) ◽  
pp. 7844-7848 ◽  
Author(s):  
Xiling Tang ◽  
Kurtis Remmel ◽  
Xinwei Lan ◽  
Jiangdong Deng ◽  
Hai Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Fiber Optic ◽  
Fiber Optic Sensor ◽  
Oxide Thin Film ◽  
Optic Sensor ◽  
Perovskite Type Oxide ◽  
Perovskite Type ◽  
Hydrogen Measurement

Microwave Synthesis and Characterization of Nanoscale Lanthanum Cobaltite

2012 ◽  
Vol 476-478 ◽  
pp. 1322-1326
Author(s):  
Xiao Yu Jiang ◽  
Jin Chen ◽  
Wen Zhe Chen
Keyword(s):  
Cyclic Voltammetry ◽  
Steady State ◽  
Microwave Irradiation ◽  
Reaction Order ◽  
Synthesis And Characterization ◽  
Cyclic Voltammogram ◽  
Lanthanum Cobaltite ◽  
Bet Analysis ◽  
Perovskite Type

Nanoscale lanthanum cobaltite with perovskite-type was successfully synthesized by microwave irradiation directly and was characterized by XRD, SEM, XPS and BET analysis. The results show that the size of particle was 18 nm averagely, the surface area to be 31.0 m2 g−1. The electrochemical properties were studied by cyclic voltammetry and steady state polarization. The cyclic voltammogram between 0 and 0.55 V exhibited two pairs of redox peaks prior to the onset of O2 evolution in 1 mol dm−3 KOH. The Tafel slope and the reaction order with respect to concentration of OH− were found to be 60 mV decade−1 and ca. 1, respectively.

Tubular lanthanum cobaltite perovskite type membrane for oxygen permeation

2000 ◽  
Vol 166 (1) ◽  
pp. 51-61 ◽  
Author(s):  
Shiguang Li ◽  
Wanqin Jin ◽  
Pei Huang ◽  
Nanping Xu ◽  
Jun Shi ◽  
...  
Keyword(s):  
Oxygen Permeation ◽  
Lanthanum Cobaltite ◽  
Perovskite Type

scholarly journals Improvement of Sensing Performance of Impedancemetric C2H2 Sensor Using SmFeO3 Thin-Films Prepared by a Polymer Precursor Method

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 773 ◽  
Author(s):  
Tomohisa Tasaki ◽  
Satoko Takase ◽  
Youichi Shimizu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Precursor Solution ◽  
Particle Growth ◽  
Polymer Precursor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sensor Material ◽  
Perovskite Type

A sensitive an impedancemetric acetylene (C2H2) gas sensor device could be fabricated by using perovskite-type SmFeO3 thin-film as a sensor material. The uniform SmFeO3 thin-films were prepared by spin-coating and focusing on the effects of polymer precursor solutions. The prepared precursors and thin-films were characterized by means of thermal analysis,　Fourier-transform infrared spectroscopy, ultraviolet–visible spectroscopy, X-ray diffraction analysis, scanning electron microscopy and X-ray photoelectron spectroscopy . It was found that particle growth and increase in homogeneity of the prepared thin-film could be accelerated by the addition of acetyl acetone (AcAc) as a coordination agent in the polymer precursor solution. Moreover, the highly crystallized thin-film-based sensor showed good response properties and stabilities to a low C2H2 concentration between 0.5 and 2.0 ppm.

Perovskite-type SrTiO3 thin film preparation and field emission properties

Vacuum ◽  
2020 ◽  
Vol 178 ◽  
pp. 109466
Author(s):  
Ying Yang ◽  
Li-Jun Wang ◽  
Xiao-Ping Wang ◽  
Jia-Xing Chen ◽  
Xin-Wei Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Thin Film Preparation ◽  
Film Preparation ◽  
Perovskite Type

scholarly journals The influence of metal/perovskite-type oxide interfaces on tunability of thin film capacitors

2010 ◽  
Vol 118 (1380) ◽  
pp. 664-668 ◽  
Author(s):  
Naohiro HORIUCHI ◽  
Takuya HOSHINA ◽  
Hiroaki TAKEDA ◽  
Takaaki TSURUMI
Keyword(s):  
Thin Film ◽  
Oxide Interfaces ◽  
Perovskite Type Oxide ◽  
Thin Film Capacitors ◽  
Perovskite Type

Effect of thermoelectric material of Ca or Fe-doped LaCoO3

2018 ◽  
Vol 32 (19) ◽  
pp. 1840037
Author(s):  
Kei-Ichiro Murai ◽  
Shuhei Kori ◽  
Shun Nakai ◽  
Toshihiro Moriga
Keyword(s):  
Figure Of Merit ◽  
Solid Phase ◽  
X Ray Diffraction ◽  
Lanthanum Cobaltite ◽  
Iron Doped ◽  
Calcium Doped ◽  
Diffraction Patterns ◽  
Lanthanum Cobalt Oxide ◽  
Perovskite Type ◽  
Fe Substitution

As the Perovskite-type Lanthanum Cobalt Oxide of LaCoO3 is nontoxic and thermally stable even at high temperature, this material is expected as a candidate for thermoelectric applications. The thermoelectric performance of a material is often evaluated by the dimensionless figure-of-merit, ZT (=S[Formula: see text]T/[Formula: see text]), or S[Formula: see text] in the ZT equation. S[Formula: see text] shows the electrical characteristic as a Power factor (PF). It has been reported Seebeck coefficient of LaCoO3 is higher than other oxide materials at room temperature even though electrical conductivity and ZT are lower values. In this study, calcium-doped lanthanum cobaltite La[Formula: see text]Ca[Formula: see text]CoO3 (x = 0.00, 0.05, 0.10 and 0.15) and iron-doped lanthanum cobaltite LaCo[Formula: see text]Fe[Formula: see text]O3 (y = 0.05, 0.10 and 0.15) have been prepared by solid-phase process. The X-ray diffraction patterns of the calcium-doped samples and iron-doped samples show cubic perovskite structure. Electric conductivities were improved by Ca or Fe substitution and showed a tendency to increase with increasing the temperature. The sample substituted with Fe 5 mol.% showed the maximum PF, 0.510 ([Formula: see text] W/K2m) at 548 K, and the sample substituted with Ca 15 mol.% showed the maximum PF, 0.152 ([Formula: see text] W/K2m) at 498 K.

Influence of Schottky Interfaces on Dielectric Properties in Perovskite-Type Oxide Thin-Film Capacitors

2011 ◽  
Vol 485 ◽  
pp. 203-206
Author(s):  
Naohiro Horiuchi ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
Thin Film ◽  
Estimation Method ◽  
Hysteretic Behavior ◽  
Perovskite Oxide ◽  
Oxide Thin Film ◽  
Perovskite Type Oxide ◽  
Thin Film Capacitors ◽  
Capacitance Voltage ◽  
Perovskite Type ◽  
Schottky Model

An estimation method of the influence of interfaces on properties in perovskite-type oxide thin-film capacitors is presented. We proposed a modified Schottky model that can be employed to explain the electric properties of metal/perovskite-type oxide junctions. The modified model considers the electric field dependence of permittivity and the flow of electrons from metal to defect states located in the band gap of the perovskite oxide. The simulation based on this model could successfully describe the results of capacitance-voltage measurements of junctions between metals (Pt, Au, and Ag) and Nb-doped SrTiO3, which were not explained by the conventional Schottky model. Additionally, a simulation for a thin-film capacitor with hysteretic behavior could depict an asymmetric capacitance-voltage curve.

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