scholarly journals Surface Reaction Mechanism during the Atomic Layer Deposition of Titanium Dioxide from Titanium Isopropoxide and Ozone

2008 ◽  
Keyword(s):  
Titanium Dioxide ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Titanium Isopropoxide ◽  
Layer Deposition ◽  
Surface Reaction Mechanism

scholarly journals Atomic layer deposition of transparent semiconducting oxide CuCrO2 thin films

2015 ◽  
Vol 3 (32) ◽  
pp. 8364-8371 ◽  
Author(s):  
T. S. Tripathi ◽  
Janne-Petteri Niemelä ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Gas Phase ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Atomic Level ◽  
High Quality ◽  
Layer Deposition ◽  
Controlled Deposition

Atomic layer deposition (ALD) is a vital gas-phase technique for atomic-level thickness-controlled deposition of high-quality thin films of CuCrO2 on various substrate morphologies owing to its self-limiting gas-surface reaction mechanism.

Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process

2000 ◽  
Vol 161 (3-4) ◽  
pp. 385-395 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Teet Uustare ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Growth Process ◽  
Atomic Layer ◽  
Titanium Isopropoxide ◽  
Layer Deposition
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