scholarly journals Atomic layer deposition of transparent semiconducting oxide CuCrO2 thin films

2015 ◽  
Vol 3 (32) ◽  
pp. 8364-8371 ◽  
Author(s):  
T. S. Tripathi ◽  
Janne-Petteri Niemelä ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Gas Phase ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Atomic Level ◽  
High Quality ◽  
Layer Deposition ◽  
Controlled Deposition

Atomic layer deposition (ALD) is a vital gas-phase technique for atomic-level thickness-controlled deposition of high-quality thin films of CuCrO2 on various substrate morphologies owing to its self-limiting gas-surface reaction mechanism.

Reaction Mechanism Underlying Atomic Layer Deposition of Antimony Telluride Thin Films

2016 ◽  
Vol 16 (5) ◽  
pp. 4924-4928 ◽  
Author(s):  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jae-Min Park ◽  
Luchana L Yusup ◽  
Hana Ishii ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Antimony Telluride ◽  
Layer Deposition

Evaluation of New Aminoalkoxide Precursors for Atomic Layer Deposition. Growth of Zirconium Dioxide Thin Films and Reaction Mechanism Studies

2004 ◽  
Vol 16 (26) ◽  
pp. 5630-5636 ◽  
Author(s):  
Raija Matero ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
Timo Sajavaara ◽  
Anthony C. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Zirconium Dioxide ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

2014 ◽  
Vol 565 ◽  
pp. 19-24 ◽  
Author(s):  
Lauri Aarik ◽  
Tõnis Arroval ◽  
Raul Rammula ◽  
Hugo Mändar ◽  
Väino Sammelselg ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
High Quality ◽  
Doped Tio2 ◽  
Layer Deposition

High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications

2021 ◽  
pp. 108027
Author(s):  
Robin Khosla ◽  
Daniel Schwarz ◽  
Hannes S. Funk ◽  
Kateryna Guguieva ◽  
Jörg Schulze
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Remote Plasma ◽  
High Quality ◽  
Layer Deposition

scholarly journals A Low Cost, High Efficiency TMA-Replacement for the Deposition of High-Quality Aluminum Nitride by Atomic Layer Deposition

2020 ◽  
Author(s):  
Sydney Buttera ◽  
Polla Rouf ◽  
Petro Deminskyi ◽  
Nathan O'Brien ◽  
Sean Barry ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

scholarly journals Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

2020 ◽  
Author(s):  
Sydney Buttera ◽  
Polla Rouf ◽  
Petro Deminskyi ◽  
Nathan O'Brien ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

Reaction Mechanism for Atomic Layer Deposition of Germanium Ditelluride Thin Films

2017 ◽  
Vol 17 (5) ◽  
pp. 3472-3476 ◽  
Author(s):  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jae-Min Park ◽  
Luchana L Yusup ◽  
Jeeyoon Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Self-limiting atomic layer deposition of barium oxide and barium titanate thin films using a novel pyrrole based precursor

2016 ◽  
Vol 4 (10) ◽  
pp. 1945-1952 ◽  
Author(s):  
Shinjita Acharya ◽  
Jan Torgersen ◽  
Yongmin Kim ◽  
Joonsuk Park ◽  
Peter Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Atomic Layer Deposition ◽  
Barium Oxide ◽  
Atomic Layer ◽  
High Quality ◽  
Planar Structures ◽  
Layer Deposition

Self-limiting growth of high quality binary BaO and BaTiO3 using a novel class of Ba precursor at lowest temperature ever reported and shown to cover non planar structures.

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