Converter-Level Integration for Wide Band-Gap Automotive Power Electronics

2018 ◽  
Vol 2018 (1) ◽  
pp. 000069-000074
Author(s):  
C Mark Johnson ◽  
Jordi Espina ◽  
Behzad Ahmadi ◽  
Jingru Dai ◽  
Bassem Mouawad ◽  
...  

Abstract Wide band-gap (WBG) semiconductors offer many potential benefits to designers of power electronic systems. Lower switching losses allow operation at higher switching frequencies, which in principle allows a reduction in passive component values in many converter applications. However, efficient operation at higher switching frequencies requires increased voltage and current transition rates. With conventional packaging and circuit construction, parasitic inductance and capacitance can deteriorate converter performance, reducing efficiency and adding to the electromagnetic interference (EMI) emitted from the system. Outside the commutation cell, fast voltage transitions may lead to unacceptably high levels of conducted and radiated EMI, so approaches involving the local filtering of converter outputs are attractive. To mitigate these effects in conventional modules, switching speeds are often deliberately limited and the potential benefits of using WBG technologies cannot be fully realized. Here we examine the design and realization of Converter-in-Package (CiP) modular blocks for system power levels from 100s W to 100s kW, incorporating individual commutation cells with close-coupled gate drives, input/output filtering and reduced EMI. The concept is illustrated through the realization of a modular, segmented power converter for an integrated drive.

2019 ◽  
Vol 41 (8) ◽  
pp. 315-330 ◽  
Author(s):  
Charles R. Sullivan ◽  
Di Yao ◽  
Garet Gamache ◽  
Alexander Latham ◽  
Jizheng Qiu

2020 ◽  
Vol 35 (12) ◽  
pp. 12595-12600 ◽  
Author(s):  
Armin Jafari ◽  
Mohammad Samizadeh Nikoo ◽  
Nirmana Perera ◽  
Halil Kerim Yildirim ◽  
Furkan Karakaya ◽  
...  

2021 ◽  
Vol 36 (2) ◽  
pp. 2444-2445
Author(s):  
Armin Jafari ◽  
Mohammad Samizadeh Nikoo ◽  
Nirmana Perera ◽  
Halil Kerim Yildirim ◽  
Furkan Karakaya ◽  
...  

Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

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