Growth of the Manganese Silicide/Silicon Nanowire Heterostructures and Their Physical Properties

In this work, we report a novel and efficient silicidation method to synthesize higher manganese silicide (HMS) nanowires with interesting characterization and physical properties. High density silicon nanowire arrays fabricated by chemical etching reacted with MnCl2 precursor through a unique double tube chemical vapor deposition (CVD) system, where we could enhance the vapor pressure of the precursor and provide stable Mn vapor with a sealing effect. It is crucial that the method enables the efficient formation of high quality higher manganese silicide nanowires without a change in morphology and aspect ratio during the process. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were utilized to characterize the HMS nanowires. High-resolution TEM studies confirm that the HMS nanowires were single crystalline Mn27Si47 nanowires of Nowotny Chimney Ladder crystal structures. Magnetic property measurements show that the Mn27Si47 nanowire arrays were ferromagnetic at room temperature with a Curie temperature of over 300 K, highly depending on the relationship between the direction of the applied electric field and the axial direction of the standing nanowire arrays. Field emission measurements indicate that the 20 μm long nanowires possessed a field enhancement factor of 3307. The excellent physical properties of the HMS nanowires (NWs) make them attractive choices for applications in spintronic devices and field emitters.

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Study on the Physical Properties of a SiNW Biosensor to the Sensitivity of DNA Detection

Materials ◽

10.3390/ma14195716 ◽

2021 ◽

Vol 14 (19) ◽

pp. 5716

Author(s):

Siti Noorhaniah Yusoh ◽

Khatijah Aisha Yaacob

Keyword(s):

Surface Roughness ◽

Physical Properties ◽

Limit Of Detection ◽

Silicon Nanowire ◽

Volume Ratio ◽

Silicon Nanowire Arrays ◽

Atomic Force ◽

Local Anodic Oxidation ◽

Wet Chemical ◽

Biosensor Device

SiNW (silicon nanowire) arrays consisting of 5- and 10-wires were fabricated by using an atomic force microscope—the local anodic oxidation (AFM-LAO) technique followed by wet chemical etching. Tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) at various concentrations were used to etch SiNWs. The SiNWs produced were differed in dimension and surface roughness. The SiNWs were functionalized and used for the detection of deoxyribonucleic acid (DNA) dengue (DEN-1). SiNW-based biosensors show sensitive detection of dengue DNA due to certain factors. The physical properties of SiNWs, such as the number of wires, the dimensions of wires, and surface roughness, were found to influence the sensitivity of the biosensor device. The SiNW biosensor device with 10 wires, a larger surface-to-volume ratio, and a rough surface is the most sensitive device, with a 1.93 fM limit of detection (LOD).

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Hierarchical Carbon-Silicon Nanowire Heterostructures for Hydrogen Evolution Reaction

ECS Meeting Abstracts ◽

10.1149/ma2018-01/29/1662 ◽

2018 ◽

Keyword(s):

Hydrogen Evolution ◽

Hydrogen Evolution Reaction ◽

Silicon Nanowire ◽

Nanowire Heterostructures ◽

Hierarchical Carbon

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One-dimensional hole gas in germanium/silicon nanowire heterostructures

Proceedings of the National Academy of Sciences ◽

10.1073/pnas.0504581102 ◽

2005 ◽

Vol 102 (29) ◽

pp. 10046-10051 ◽

Cited By ~ 365

Author(s):

W. Lu ◽

J. Xiang ◽

B. P. Timko ◽

Y. Wu ◽

C. M. Lieber

Keyword(s):

Silicon Nanowire ◽

One Dimensional ◽

Nanowire Heterostructures ◽

Germanium Silicon

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Advanced core/multishell germanium/silicon nanowire heterostructures: Morphology and transport

Applied Physics Letters ◽

10.1063/1.3574537 ◽

2011 ◽

Vol 98 (16) ◽

pp. 163112 ◽

Cited By ~ 36

Author(s):

S. A. Dayeh ◽

A. V. Gin ◽

S. T. Picraux

Keyword(s):

Silicon Nanowire ◽

Nanowire Heterostructures ◽

Germanium Silicon

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Enhanced diode performance in cadmium telluride–silicon nanowire heterostructures

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2015.04.195 ◽

2015 ◽

Vol 644 ◽

pp. 131-139 ◽

Cited By ~ 9

Author(s):

Funda Aksoy Akgul ◽

Guvenc Akgul ◽

Hasan Huseyin Gullu ◽

Husnu Emrah Unalan ◽

Rasit Turan

Keyword(s):

Cadmium Telluride ◽

Silicon Nanowire ◽

Nanowire Heterostructures

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Dynamical Observation of Epitaxial Growth of Copper Silicide/Silicon Nanowire Heterostructures

ECS Meeting Abstracts ◽

10.1149/ma2012-01/20/880 ◽

2012 ◽

Keyword(s):

Epitaxial Growth ◽

Silicon Nanowire ◽

Copper Silicide ◽

Nanowire Heterostructures

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Modeling and Characterization of Silicon Nanowire Networks for Thermoelectric Conversion

MRS Proceedings ◽

10.1557/opl.2012.1523 ◽

2012 ◽

Vol 1456 ◽

Author(s):

Kate J. Norris ◽

Andrew J. Lohn ◽

Elane Coleman ◽

Gary S. Tompa ◽

Nobuhiko P. Kobayashi

Keyword(s):

Physical Properties ◽

Silicon Nanowires ◽

Large Scale ◽

Silicon Nanowire ◽

Three Dimensional ◽

Organic Chemical ◽

Scale Production ◽

Element Analysis ◽

Seebeck Coefficients ◽

Nanowire Networks

ABSTRACTWe report the growth of silicon nanowires by plasma assisted metal organic chemical vapor deposition. Silicon nanowires grew as three-dimensional networks in which electrical charges and heat can travel over the distance much longer than the mean length of the constituent nanowires. We studied the dependence of thermoelectric properties on two factors; nominal doping concentrations and geometrical factors within the silicon nanowire networks. The silicon nanowire networks show Seebeck coefficients comparable with that of bulk silicon for a given nominal doping concentration, allowing us to control Seebeck coefficients by tuning the doping concentrations. Rather than studying single nanowires, we chose networks of nanowires formed densely across large areas required for large scale production. We also studied the role played by intersections where multiple nanowires were fused to form the nanowire networks. Structural analysis, transport measurement, and modeling based on finite-element analysis were carried out to obtain insights of physical properties at the intersections. Understanding these physical properties of three-dimensional nanowire networks will advance the development of thermoelectric devices.

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