Низкотемпературные омические контакты на основе Ta/Al к гетероэпитаксиальным структурам AlGaN/GaN на кремниевых подложках
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AbstractThe formation features of a low-temperature Ta/Al-based ohmic contact to Al_0.25Ga_0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at T = 550°C in a nitrogen atmosphere.