RF Power Effect of Post-Deposition Oxygen Plasma Treatment on HfO2 Gate Dielectrics

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.


2019 ◽  
Vol 972 ◽  
pp. 165-171
Author(s):  
Naomi R. Nishiguchi ◽  
Persia Ada N. de Yro

Polymer films are plasma treated to improve surface properties making them hydrophilic or hydrophobic. Expanded polytetrafluoroethylene (ePTFE) is used in a wide variety of applications but only a few report on plasma treated ePTFE. Within these very few studies on ePTFE, the use of ultra-thin membrane could hardly be found. The purpose of this study is to investigate the effect of plasma treatment (Argon-Oxygen) on the hydrophobicity of ultra-thin ePTFE membrane (4um thickness). This study used nine (9) experimental legs of ePTFE subjected to respective plasma power (150W, 315W and 600W) and exposure time (300s, 450s and 600s) for each leg. Contact angle was measured prior and after subjecting to plasma condition using contact angle meter. Energy pen was also used to verify its hydrophobicity. Scanning electron microscopy (SEM) with 10,000x magnification was used to check for any change in surface after exposing to each condition. The findings showed that the membrane surface changed after exposure to plasma. All legs became hydrophilic. 102◦ contact angle was measured from raw sample, but the samples exposed to plasma had contact angles ranging from max of 68◦ to min of 48◦. The results showed that the degree of surface change could be correlated to the plasma parameters applied. Furthermore, the highest radio frequency (RF) power applied resulted to contact angle in the range of 60◦ while the lowest RF power applied resulted to the lowest contact angle, in the range of 40◦, measured. On the other hand, no particular trend was observed based on exposure time. Based on the gathered results, the ultra-thin ePTFE, in order to maintain its hydrophobicity, must not be applied with argon-oxygen plasma treatment. However, if the ultra-thin ePTFE is to be made hydrophilic, argon-oxygen plasma treatment could be applied while adjusting the plasma parameters to meet the desired hydrophilicity level.


2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.


RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..


2019 ◽  
Vol 463 ◽  
pp. 91-95 ◽  
Author(s):  
Vallivedu Janardhanam ◽  
Hyung-Joong Yun ◽  
Inapagundla Jyothi ◽  
Shim-Hoon Yuk ◽  
Sung-Nam Lee ◽  
...  

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