Mechanistic Transition of Electron Transfer Kinetics from Quantum Electron Tunneling to Trap-Facilitated Hopping through TiO2 Films Grown By Atomic Layer Deposition on SnO2 Electrodes

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...

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Low temperature temporal and spatial atomic layer deposition of TiO2 films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4922588 ◽

2015 ◽

Vol 33 (4) ◽

pp. 041512 ◽

Cited By ~ 24

Author(s):

Morteza Aghaee ◽

Philipp S. Maydannik ◽

Petri Johansson ◽

Jurkka Kuusipalo ◽

Mariadriana Creatore ◽

...

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Tio2 Films ◽

Layer Deposition ◽

Temporal And Spatial

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Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition

Chemistry of Materials ◽

10.1021/acs.chemmater.8b05282 ◽

2019 ◽

Vol 31 (11) ◽

pp. 3900-3908 ◽

Cited By ~ 8

Author(s):

Jason R. Avila ◽

Syed B. Qadri ◽

Jaime A. Freitas ◽

Neeraj Nepal ◽

David R. Boris ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Growth Conditions ◽

Tio2 Films ◽

Layer Deposition ◽

Phase Selectivity

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Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3536487 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AD01 ◽

Cited By ~ 15

Author(s):

C. Kügeler ◽

J. Zhang ◽

S. Hoffmann-Eifert ◽

S. K. Kim ◽

R. Waser

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Tio2 Films ◽

Memory Cells ◽

Resistive Memory ◽

Layer Deposition

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Fowler-nordheim tunnelling in Au−TiO2−Ag film structures

Open Physics ◽

10.2478/bf02476278 ◽

2004 ◽

Vol 2 (1) ◽

Cited By ~ 2

Author(s):

J. Aarik ◽

V. Bichevin ◽

I. Jõgi ◽

H. Käämbre ◽

M. Laan ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Schottky Barrier ◽

Field Emission ◽

Atomic Layer ◽

Negative Bias ◽

Tio2 Films ◽

Au Electrode ◽

Layer Deposition ◽

Reversed Polarity ◽

Ag Film

AbstractI-V-characteristics have been measured for Au−TiO2−Ag structures with TiO2 layers of 30 and 180 nm thickness. The TiO2 films were grown by atomic layer deposition (ALD) technique. In the case of negative bias on the Au electrode, the conduction currents through TiO2 layers follow the Fowler-Nordheim formula for field emission over several orders of magnitude. The bulk of the currents may be attributed to tunnelling, seemingly through a Schottky barrier at the Au−TiO2 junction. In the case of reversed polarity the currents are also observed, but cannot be interpreted as tunnelling.

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Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films

Journal of Materials Chemistry C ◽

10.1039/c4tc01381f ◽

2014 ◽

Vol 2 (46) ◽

pp. 9993-10001 ◽

Cited By ~ 13

Author(s):

Woojin Jeon ◽

Woongkyu Lee ◽

Yeon Woo Yoo ◽

Cheol Hyun An ◽

Jeong Hwan Han ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Crucial Role ◽

Growth Stage ◽

Catalytic Decomposition ◽

Atomic Layer ◽

Active Oxygen ◽

Initial Growth ◽

Tio2 Films ◽

Initial Growth Stage ◽

Layer Deposition

The catalytic decomposition of RuO2 with the help of Ru in the film played the crucial role for the increase in the active oxygen, which results that the growth per cycle of TiO2 at the initial growth stage was drastically increased on RuOx (RuO2/Ru mixture) compared to Ru and RuO2.

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