Effect of Ti Content on Physical Properties and Electrical
Characteristics of High-k Yb2TiO5 Gate Dielectrics for InZnSnO Thin-Film
Transistors
Keyword(s):
High K
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Keyword(s):
2014 ◽
Vol 598
(1)
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pp. 129-134
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Keyword(s):
Keyword(s):
Keyword(s):
2015 ◽
Vol 11
(3)
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pp. 248-254
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2015 ◽
Vol 7
(6)
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pp. 1108-1113
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Keyword(s):
2017 ◽
Vol 13
(4)
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pp. 287-291
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