X-ray diffraction characterization of the microstructure of close-packed hexagonal nanomaterials

2008 ◽  
Vol 23 (3) ◽  
pp. 213-223 ◽  
Author(s):  
Zhao-hui Pu ◽  
Chuan-zheng Yang ◽  
Pei Qin ◽  
Yu-wan Lou ◽  
Li-fang Cheng
Keyword(s):  
Stacking Faults ◽  
Triple Line ◽  
Stacking Fault ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Nano Zno ◽  
X Ray ◽  
Crystallite Sizes ◽  
Small Crystallite ◽  
Charge Discharge

A general least-squares technique for X-ray diffraction line broadening analysis has been developed. The technique can be used to determine single, double, and triple line broadening effects caused by small particle sizes, microstrain, stacking faults, or all three presented in a closed-packed hexagonal nanomaterial. The technique was applied to characterize the microstructure of β-Ni(OH)2, a negative electrode material in nickel-metal hydride (NiMH) batteries. Double line broadening effects caused by both small crystallite sizes and stacking faults in β-Ni(OH)2 were detected and analyzed. Triple line broadening effects caused simultaneously by small crystallite sizes, microstrain, and stacking faults were detected in β-Ni(OH)2 after activation and charge-discharge cycle tests. The triple line broadening effects were found to be selective and most pronounced for diffraction lines with h−k=3n±1. The broadening effects were larger when l=even, but smaller when l=odd. The shape and the average size of the crystallites, microstrain, and stacking fault probability in β-Ni(OH)2 changed dramatically after activation and charge-discharge cycles. The method was also applied to characterize and investigate the microstructure of nano ZnO materials. Results indicate that no selective broadening appears in the XRD patterns of the nano ZnO materials. The average crystallite sizes were different slightly, and the stacking fault probabilities differed significantly with different dopants.

Investigation of Residual Strains of the Second Kind in Plastically Deformed Metallic Materials

1994 ◽  
Vol 376 ◽  
Author(s):  
M. Vrána ◽  
P. Klimanek ◽  
T. Kschidock ◽  
P. Lukáš ◽  
P. Mikula
Keyword(s):  
High Resolution ◽  
Neutron Diffraction ◽  
Stacking Faults ◽  
Metallic Materials ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Neutron Diffractometer ◽  
Residual Strains ◽  
Good Agreement

ABSTRACTInvestigation of strongly distorted crystal structures caused by dislocations, stacking-faults etc. in both plastically deformed f.c.c. and b.c.c. metallic materials was performed by the analysis of the neutron diffraction line broadening. Measurements were realized by means of the high resolution triple-axis neutron diffractometer equipped by bent Si perfect crystals as monochromator and analyzer at the NPI Řež. The substructure parameters obtained in this manner are in good agreement with the results of X-ray diffraction analysis.

X-Ray diffraction line broadening by stacking faults in SrBi2Nb2O9/SrTiO3 epitaxial thin films

2001 ◽  
Vol 391 (1) ◽  
pp. 42-46 ◽  
Author(s):  
A. Boulle ◽  
C. Legrand ◽  
R. Guinebretière ◽  
J.P. Mercurio ◽  
A. Dauger
Keyword(s):  
Thin Films ◽  
Stacking Faults ◽  
Diffraction Line ◽  
Epitaxial Thin Films ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray

Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

2016 ◽  
Vol 858 ◽  
pp. 147-150 ◽  
Author(s):  
Mojmír Meduňa ◽  
Thomas Kreiliger ◽  
Ivan Prieto ◽  
Marco Mauceri ◽  
Marco Puglisi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Backscatter Diffraction ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Fault Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electron Backscatter ◽  
Backscatter Diffraction

The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si (001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction. A significant reduction of SF density with respect to planar material was observed for the {111} planes parallel to the ridges. The highest SF density was found in the (-1-11) plane. A previously observed defect was identified as twins by electron backscatter diffraction.

Diffraction analysis of perovskite-like oxides containing irregular intergrowths

2008 ◽  
Vol 42 (1) ◽  
pp. 1-9 ◽  
Author(s):  
L. Olikhovska ◽  
A. Ustinov
Keyword(s):  
Stacking Faults ◽  
Lattice Parameter ◽  
Stacking Fault ◽  
Layered Perovskite ◽  
Structural Fragment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fault Properties ◽  
Diffraction Peaks ◽  
Position Profile

Features of the X-ray intensity distributions caused by the presence of random and nonrandom stacking faults (irregular intergrowths) in layered perovskite-like oxides are studied by a computer simulation technique. It is shown that, apart from the stacking fault properties, the position, profile and intensity of a diffraction peak are dependent on the ratio between theclattice parameter of the crystal and the thickness of the new structural fragment formed as a result of the stacking fault. A means of characterizing the stacking faults on the basis of the relative positions of pairs of diffraction peaks is presented. The approach is exemplified by the X-ray diffraction study of a disordered single crystal of the system Bi–Sr–Ca–Cu–O.

scholarly journals Effect of multiple laser shock processing on nano-scale microstructure of an aluminum alloy

2018 ◽  
Author(s):  
Simge GencalpIrizalp ◽  
Nursen Saklakoglu
Keyword(s):  
Stacking Faults ◽  
Stacking Fault ◽  
Structural Defects ◽  
Laser Shock ◽  
X Ray Diffraction ◽  
Laser Shock Processing ◽  
Alloy Plate ◽  
X Ray ◽  
Nano Scale ◽  
Shock Processing

In this study, nano-scale microstructural evolution in 6061-T6 alloy after laser shock processing (LSP) were studied. 6061-T6 alloy plate were subjected to multiple LSP. The LSP treated area was characterized by X-ray diffraction and the microstructure of the samples was analyzed by transmission electron microscopy. Focused Ion Beam (FIB) tools were used to prepare TEM samples in precise areas. It was found that even though aluminum had high stacking fault energy, LSP yielded to formation of ultrafine grains and deformation faults such as dislocation cells, stacking faults. The stacking fault probability (PSF) was obtained in LSP-treated alloy using X-Ray diffraction. Deformation induced stacking faults lead to the peak position shifts, broadening and asymmetry of diffraction. XRD analysis and TEM observations revealed significant densities of stacking faults in LSP-treated 6061-T6 alloy. And mechanical properties of LSP-treated alloy were also determined to understand the hardening behavior with high concentration of structural defects.

X-ray characterisation of the basal stacking fault densities of (11-22) GaN

CrystEngComm ◽  
2021 ◽  
Author(s):  
Markus Pristovsek ◽  
Martin Fentrup ◽  
Tongtong Zhu ◽  
Gunnar Kusch ◽  
Colin Humphreys
Keyword(s):  
Basal Plane ◽  
Stacking Faults ◽  
Stacking Fault ◽  
X Ray Diffraction ◽  
X Ray

Basal plane stacking faults (BSF) in GaN (11-22) layers were observed by a laboratory X-ray diffraction (XRD) system. For this, the (11-22) GaN was oriented in the [-12-10] zone for...

Stacking fault model of ∊-martensite and itsDIFFaXimplementation

2011 ◽  
Vol 44 (4) ◽  
pp. 779-787 ◽  
Author(s):  
Stefan Martin ◽  
Christiane Ullrich ◽  
Daniel Šimek ◽  
Ulrich Martin ◽  
David Rafaja
Keyword(s):  
Electron Microscopy ◽  
Electron Backscatter Diffraction ◽  
Stacking Faults ◽  
Stacking Fault ◽  
X Ray Diffraction ◽  
Contrast Imaging ◽  
X Ray ◽  
Austenitic Transformation ◽  
Electron Channelling ◽  
Diffraction Patterns

Plastic deformation of highly alloyed austenitic transformation-induced plasticity (TRIP) steels with low stacking fault energy leads typically to the formation of ∊-martensite within the original austenite. The ∊-martensite is often described as a phase having a hexagonal close-packed crystal structure. In this contribution, an alternative structure model is presented that describes ∊-martensite embedded in the austenitic matrixviaclustering of stacking faults in austenite. The applicability of the model was tested on experimental X-ray diffraction data measured on a CrMnNi TRIP steel after 15% compression. The model of clustered stacking faults was implemented in theDIFFaXroutine; the faulted austenite and ∊-martensite were represented by different stacking fault arrangements. The probabilities of the respective stacking fault arrangements were obtained from fitting the simulated X-ray diffraction patterns to the experimental data. The reliability of the model was proven by scanning and transmission electron microscopy. For visualization of the clusters of stacking faults, the scanning electron microscopy employed electron channelling contrast imaging and electron backscatter diffraction.

Routine Crystallite-Size Determination by X-Ray Diffraction Line Broadening

1961 ◽  
Vol 5 ◽  
pp. 104-116 ◽  
Author(s):  
R. C. Rau
Keyword(s):  
Crystallite Size ◽  
Ceramic Materials ◽  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Routine Basis ◽  
Crystallite Sizes ◽  
Standard Set ◽  
Sintering Characteristics

AbstractIncreasing interest in the sintering characteristics of various ceramic materials has resulted in the need for a knowledge of the crystallite sizes of many constituent ceramic powders. Standard X-ray diffraction line-broadening techniques have been utilized to determine these crystallite sizes. This paper presents a general review of the theory of line broadening as a means of measuring crystallite size and gives the methods and modifications used to perform this type of analysis rapidly and on a routine basis.Four modifications have been used in the determination of crystallite size routinely by X-ray line broadening. These methods are (1) a graded set of powder photographs, (2) a computer program to calculate sizes from diffractometer data, (3) a set of crystallite-size curves for a given material for use with diffractometer data, and (4) a standard set of curves to use with diffractometer data for any strain-free materials. The preparation, use, and limitations of each of these methods is presented.

scholarly journals X-ray Line Broadening Study on Shock-modified Zirconia

1988 ◽  
Vol 41 (2) ◽  
pp. 251 ◽  
Author(s):  
B Morosin ◽  
RA Graham ◽  
Y Zhang ◽  
JM Stewart ◽  
CR Hubbard
Keyword(s):  
Shock Loading ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Usual Manner ◽  
Fitting Procedures ◽  
Crystallite Sizes ◽  
Post Shock ◽  
Powder Compacts ◽  
Peak Pressures

Zirconia (Zr02) powder compacts have been subjected to controlled, quantitative high pressure shock loading at peak pressures from 5-27 GPa and preserved for post-shock analysis. The overlapping broadened X-ray diffraction peak profiles have been separated by least-squares fitting procedures. The separate lines have been analysed in the usual manner to determine the residual lattice strain and the coherent crystallite sizes. Maximum modification effects are observed near 20 GPa with strain values near 3 x 10-3 and size values near 200 A.

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