Investigation of Semiconductor Heterostructures by White Beam Synchrotron X-Ray Topography in Grazing Bragg-Laue and Conventional Bragg Geometries

1991 ◽  
Vol 35 (A) ◽  
pp. 247-253
Author(s):  
G.-D. Yao ◽  
J. Wu ◽  
T. Fanning ◽  
M. Dudley
Keyword(s):  
Penetration Depth ◽  
Grazing Incidence ◽  
Semiconductor Heterostructures ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
X Ray ◽  
Main Reflection ◽  
White Beam ◽  
Topographic Imaging

AbstractWhite beam synchrotron X-ray topography has been applied both to the characterization of two semiconductor heterostructures, GaAs/Si and InxGa1-xAs/GaAs strained layers, and a substrate to be used for growing semiconductor epilayers, Cd1-xZnxTe. In the case of the heterostructures, misfit dislocations were observed using depth sensitive X-ray topographic imaging in grazing incidence Bragg-Laue geometries. The X-ray penetration depth, which can be varied from several hundreds of angstroms to hundreds of micrometers by rotating about the main reflection vector, which in this specific case was (355), is governed by kinernatical theory. This is justified by comparing dislocation contrast and visibility with the extent of the calculated effective misorientalion field in comparison to the effective X-ray penetration depth. For the case of Cd1-xZnxTe, twin configurations are observed, and their analysis is presented.

Depth Sensitive Imaging of Defects in Epilayers and Single Crystals Using White Beam Synchrotron Radiation Topography in Grazing Bragg-Laue Geometry.

1989 ◽  
Vol 163 ◽  
Author(s):  
M. Dudley ◽  
G.-D. Yao ◽  
J. Wu ◽  
H.-Y. Liu
Keyword(s):  
Penetration Depth ◽  
Depth Profiling ◽  
X Rays ◽  
X Ray Diffraction ◽  
General Applicability ◽  
Advantages And Disadvantages ◽  
White Beam ◽  
Diffraction Geometry ◽  
Topographic Imaging

AbstractThe technique of Synchrotron White Beam topographic imaging in grazing Bragg-Laue geometries has been developed at the Stony Brook synchrotron topography station at the NSLS. This technique enables imaging of defects in subsurface regions of thickness which can range from hundreds of Angstroms to hundreds of microns as determined by the penetration depth of the X-rays. This penetration depth, which is shown to be determined by the kinematical theory of X-ray diffraction, can be conveniently varied, in a controlled manner, by simple manipulation of the diffraction geometry, thereby enabling a depth profiling of the defect content.The fundamentals of the technique are described, and its advantages and disadvantages compared to existing techniques are discussed in detail. Examples of application of the technique in the characterization of defects in thin epitaxial films of GaAs on Si, are given, and the general applicability of the technique is discussed.

Characterization of Interfacial Roughness in Semiconductor Heterostructures by X-Ray Reflectivity

1987 ◽  
Vol 103 ◽  
Author(s):  
A. Krol ◽  
C. J. Sher ◽  
H. Resat ◽  
S. C. Woronick ◽  
W. Ng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Incidence Angle ◽  
Grazing Incidence ◽  
Semiconductor Heterostructures ◽  
X Rays ◽  
Interfacial Roughness ◽  
X Ray ◽  
Grazing Incidence Angle

ABSTRACTThe reflection of monochromatic x-rays by a layered heterostructure can be utilized as a nondestructive probe to obtain information on the interfacial roughness in the material. Interference between x-rays reflected from the top surface and the interfaces can give rise to pronounced oscillations in the reflectivity as a function of the grazing incidence angle. We have made use of this technique to investigate the interfacial roughness in semiconductor heterostructures grown by molecular beam epitaxy.

Reference-free, depth-dependent characterization of nanolayers and gradient systems with advanced grazing incidence X-ray fluorescence analysis

2015 ◽  
Vol 212 (3) ◽  
pp. 523-528 ◽  
Author(s):  
Philipp Hönicke ◽  
Blanka Detlefs ◽  
Matthias Müller ◽  
Erik Darlatt ◽  
Emmanuel Nolot ◽  
...  
Keyword(s):  
Fluorescence Analysis ◽  
Grazing Incidence ◽  
X Ray ◽  
Gradient Systems

Synchrotron white beam x-ray topography characterization of structural defects in microgravity and ground-based CdZnTe crystals

1996 ◽  
Author(s):  
Hua Chung ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
David J. Larson, Jr.
Keyword(s):  
Structural Defects ◽  
X Ray ◽  
White Beam

The influence of X-ray coherence length on TXRF and XSW and the characterization of nanoparticles observed under grazing incidence of X-rays

2009 ◽  
Vol 24 (6) ◽  
pp. 792 ◽  
Author(s):  
Alex von Bohlen ◽  
Markus Krämer ◽  
Christian Sternemann ◽  
Michael Paulus
Keyword(s):  
Coherence Length ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray

Characterization of Defect Structures in 3C-SiC Single Crystals Using Synchrotron White Beam X-ray Topography

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Huang ◽  
M. Dudley ◽  
C. Fazi
Keyword(s):  
Single Crystals ◽  
Stacking Faults ◽  
Interference Microscopy ◽  
Defect Structures ◽  
Growth Sector ◽  
X Ray ◽  
Partial Dislocations ◽  
White Beam ◽  
Transmission And Reflection

AbstractDefect structures in (111) 3C-SiC single crystals, grown using the Baikov technique, have been studied using Synchrotron White Beam X-ray Topography (SWBXT). The major types of defects include complex growth sector boundary structures, double positioning twins, stacking faults on { 111 } planes, inclusions and dislocations (including growth dislocations and partial dislocations bounding stacking faults). Detailed stacking fault and double positioning twin configurations are determined using a combination of Nomarski interference microscopy, SEM and white beam x-ray topography in both transmission and reflection geometries. Possible defect generation phenomena are discussed.

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