Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets

Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2or SnO2–SnF2mixtures, ceramics obtained by casting either an aqueous SnO2–SnF2slurry or a suspension of tin oxide in molten tin fluoride. The samples were prepared in oxygen-argon gas mixtures in which the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The optical and electrical properties of the obtained thin films have been studied and compared to those of the films obtained by spray technique.

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Annealing effect on structural, optical and electrical properties of pure and Mg doped tin oxide thin films

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-013-1499-1 ◽

2013 ◽

Vol 24 (12) ◽

pp. 4925-4931

Author(s):

Syed Mansoor Ali ◽

Jan Muhammad ◽

Syed Tajammul Hussain ◽

Syed Danish Ali ◽

Naeem Ur Rehman ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Tin Oxide ◽

Annealing Effect ◽

Optical And Electrical Properties ◽

Oxide Thin Films ◽

Mg Doped

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Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.652-654.519 ◽

2013 ◽

Vol 652-654 ◽

pp. 519-522

Author(s):

Jun Chen ◽

Yue Hui Hu ◽

Hong Hao Hu ◽

Yi Chuan Chen

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Sol Gel ◽

Hexagonal Structure ◽

Optical And Electrical Properties ◽

Axis Orientation ◽

Gel Method ◽

Sol Gel Method ◽

Sn Doping ◽

Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

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STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

Functional Materials Letters ◽

10.1142/s1793604711002330 ◽

2011 ◽

Vol 04 (04) ◽

pp. 401-405 ◽

Cited By ~ 5

Author(s):

W. CHER ◽

S. YICK ◽

S. XU ◽

Z. J. HAN ◽

K. OSTRIKOV

Keyword(s):

Thin Films ◽

Solar Cell ◽

Electrical Properties ◽

Transparent Conducting Oxide ◽

Optical Transmittance ◽

Nitrogen Atmosphere ◽

Optical And Electrical Properties ◽

Glass Substrates ◽

Optimal Annealing Temperature ◽

Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

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Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

10.36293/sfj.2019.0002 ◽

2019 ◽

Keyword(s):

Thin Films ◽

Solar Cells ◽

Electrical Properties ◽

Tin Oxide ◽

Transparent Conducting Oxide ◽

Optical And Electrical Properties ◽

Fluorine Doping ◽

X Ray Diffraction ◽

X Ray ◽

Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

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