scholarly journals Photosensitivity of the Er/Yb-Codoped Schott IOG1 Phosphate Glass Using 248 nm, Femtosecond, and Picosecond Laser Radiation

2008 ◽  
Vol 2008 ◽  
pp. 1-7 ◽  
Author(s):  
Stavros Pissadakis ◽  
Irini Michelakaki

The effect of 248 nm laser radiation, with pulse duration of 5 picoseconds, 500 femtoseconds, and 120 femtoseconds, on the optical properties and the Knoop hardness of a commercial Er/Yb-codoped phosphate glass is presented here. Refractive index changes of the order of few parts of 10-4 are correlated with optical absorption centers induced in the glass volume, using Kramers-Kroning relationship. Accordingly, substantially lower refractive index changes are measured in volume Bragg gratings inscribed in the glass, indicating that, in addition to the optical density changes, volume dilation changes of negative sign may also be associated with the 248 nm ultrafast irradiation. The Knoop hardness experimental results reveal that the glass matrix undergoes an observable initial hardening and then a reversing softening and volume dilation process for modest accumulated energy doses, where the Knoop hardness follows a nonmonotonic trend. Comparative results on the Knoop hardness trend are also presented for the case of 193 nm excimer laser radiation. The above findings denote that the positive or negative evolution of refractive index changes induced by the 248 nm ultrafast radiation in the glass is dominated by the counteraction of the color center formation and the volume modification effects.

1999 ◽  
Author(s):  
Joerg Heber ◽  
Roland Thielsch ◽  
Holger Blaschke ◽  
Norbert Kaiser ◽  
Uwe Leinhos ◽  
...  

1999 ◽  
Vol 138-139 ◽  
pp. 93-96 ◽  
Author(s):  
P Laurens ◽  
B Sadras ◽  
F Decobert ◽  
F Arefi ◽  
J Amouroux

1995 ◽  
Vol 60 (3) ◽  
pp. 261-270 ◽  
Author(s):  
A. Costela ◽  
J. M. Figuera ◽  
F. Florido ◽  
I. Garc�a-Moreno ◽  
E. P. Collar ◽  
...  

1982 ◽  
Vol 17 ◽  
Author(s):  
T. F. Deutsch ◽  
D. J. Silversmith ◽  
R. W. Mountain

ABSTRACTSi3N4 films have been deposited on Si by using 193 nm ArF excimer laser radiation to initiate the reaction of SiH4 and NH3 at substrate temperatures between 200–600°C. Stoichiometric films having physical and optical properties comparable to those produced using low-pressure chemical vapor deposition (LPCVD) have been produced. The dielectric properties of the films are at present inferior to those of LPCVD material.


1999 ◽  
Vol 69 (7) ◽  
pp. S739-S741 ◽  
Author(s):  
S. Pissadakis ◽  
L. Reekie ◽  
M. Hempstead ◽  
M.N. Zervas ◽  
J.S. Wilkinson

Author(s):  
S. Pissadakis ◽  
S. Mailis ◽  
L. Reekie ◽  
R.W. Eason ◽  
N.A. Vainos ◽  
...  

2013 ◽  
Vol 114 (5) ◽  
pp. 053511 ◽  
Author(s):  
Enamul H. Khan ◽  
S. C. Langford ◽  
J. T. Dickinson ◽  
L. A. Boatner

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