UV Laser-Initiated Formation of Si3N4

1982 ◽  
Vol 17 ◽  
Author(s):  
T. F. Deutsch ◽  
D. J. Silversmith ◽  
R. W. Mountain
Keyword(s):  
Optical Properties ◽  
Laser Radiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Uv Laser ◽  
Pressure Chemical ◽  
Excimer Laser Radiation ◽  
Arf Excimer Laser ◽  
193 Nm ◽  
Substrate Temperatures

ABSTRACTSi3N4 films have been deposited on Si by using 193 nm ArF excimer laser radiation to initiate the reaction of SiH4 and NH3 at substrate temperatures between 200–600°C. Stoichiometric films having physical and optical properties comparable to those produced using low-pressure chemical vapor deposition (LPCVD) have been produced. The dielectric properties of the films are at present inferior to those of LPCVD material.

Laser Photochemical Vapor Deposition of Ge Films (300 ≤ T ≤ 873 K) from GeH4: Roles of Ge2H6 and Ge

1986 ◽  
Vol 75 ◽  
Author(s):  
K. K. King ◽  
V. Tavitian ◽  
D. B. Geohegan ◽  
E. A. P. Cheng ◽  
S. A. Piette ◽  
...  
Keyword(s):  
Activation Energy ◽  
Laser Radiation ◽  
Vapor Deposition ◽  
Film Growth ◽  
Uv Laser ◽  
Cvd Growth ◽  
Excimer Laser Radiation ◽  
Parallel Geometry ◽  
Photochemical Vapor Deposition ◽  
Substrate Temperatures

AbstractThe photochemical growth of polycrystalline and amorphous Ge films on SiO2, GaAs and NaCl by photodissociating GeH4 with excimer laser radiation in parallel geometry is reported. For substrate temperatures (TS) below the pyrolytic threshold for GeH4 (553 K), two distinct regions of film growth are observed. In the 425< TS < 553 K range, the ultraviolet (UV) laser “seeds” the reactor with Ge2H6 which readily pyrolyzes at the surface, forming several monolayers of Ge which subsequently catalyze the pyrolysis of GeH4. The activation energy (Ea) in this region is the same as that for the normal CVD growth of Ge from GeH4 (Ea = 0.9 eV). If, however, the laser is pulsed throughout the film growth run, Ea falls by a factor of at least 2 and growth is observed for TS as low as 300 K. In this laser sustained region, film growth ceases in the absence of UV laser radiation. These results clearly demonstrate the ability of a UV laser to alter the reactor chemistry and dictate the species responsible for film growth.

Structural and optical properties of Si∕SiO2 superlattices prepared by low pressure chemical vapor deposition

2006 ◽  
Vol 100 (1) ◽  
pp. 013524 ◽  
Author(s):  
Zhenrui Yu ◽  
Mariano Aceves-Mijares ◽  
Enrique Quiroga ◽  
R. Lopez-Estopier ◽  
Jesus Carrillo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Structural And Optical Properties ◽  
Pressure Chemical

Deposition and Properties of AlN Films Prepared by Low Pressure CVD with a Metalorganic Precursor

1993 ◽  
Vol 335 ◽  
Author(s):  
M. J. Cook ◽  
P. K. Wu ◽  
N. Patibandla ◽  
W. B. Hillig ◽  
J. B. Hudson
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fiber Coating ◽  
Pressure Chemical ◽  
Substrate Temperatures ◽  
Carbon Concentrations

AbstractAluminum nitride films were deposited on Si (100) and sapphire (1102) substrates by low pressure chemical vapor deposition using the metalorganic precursor trisdimethylaluminum amide, [(CH3)2AlNH2]3. Depositions were carried out in a cold wall reactor with substrate temperatures between 500 and 700 °C and precursor temperatures between 50 and 80 °C. The films were analyzed by X-ray photoelectron spectroscopy, X-ray diffraction, optical microscopy and scanning electron microscopy. The films were generally smooth and adherent with colors ranging from transparent to opaque grey. Cracking and spallation were seen to occur at high film thickness. Deposition rates ranged from 20 to 300 Å/min and increased with both precursor and substrate temperature. Carbon concentrations were small, < 5 at. %, while oxygen concentrations were higher and showed a characteristic profile versus depth in the film. High temperature compatibility testing with sapphire/AlN/MoSi2 samples was carried out to determine film effectiveness as a fiber coating in a composite.

UV Laser-Induced Metal Deposition on Semiconductors From Electroplating Solutions

1986 ◽  
Vol 75 ◽  
Author(s):  
Joseph Zahavi ◽  
Pehr E. Pehrsson
Keyword(s):  
Laser Radiation ◽  
Schottky Barrier ◽  
Excimer Laser ◽  
Pulse Energy ◽  
Metal Deposition ◽  
Uv Laser ◽  
Sample Characterization ◽  
Excimer Laser Radiation ◽  
193 Nm

AbstractWe have demonstrated metal deposition on semiconductors immersed in electroplating solution by exposure to UV laser radiation. N-type β-SiC and Si in gold or Pd/Ni electroplating solutions were exposed to 20 ns pulses of 193 nm or 248 nm excimer laser radiation. The energy per pulse was 20–100 mJ. Au and Pd/Ni metallizations deposited in lines and circles on SiC showed leaky Schottky barrier I-V characteristics. The thickness increased with increasing pulse energy or number. Both masked and maskless deposition were demonstrated without apparent damage to the substrate. Details of the process, potential mechanisms, and sample characterization are discussed.

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