scholarly journals Positioning of the Fermi Level in Graphene Devices with Asymmetric Metal Electrodes

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Bum-Kyu Kim ◽  
Eun-Kyoung Jeon ◽  
Ju-Jin Kim ◽  
Jeong-O Lee
Keyword(s):  
Fermi Level ◽  
Dirac Point ◽  
Metal Electrode ◽  
Peak Position ◽  
Metal Contacts ◽  
Metal Electrodes ◽  
Hole Band ◽  
Graphene Devices ◽  
Hybrid Devices ◽  
Bias Range

To elucidate the effect of the work function on the position of the Dirac point, we fabricated graphene devices with asymmetric metal contacts. By measuring the peak position of the resistance for each pair of metal electrodes, we obtained the voltage of the Dirac pointVgDirac(V) from the gate response. We found that the position ofVgDirac(V) in the hybrid devices was significantly influenced by the type of metal electrode. The measured shifts inVgDirac(V) were closely related to the modified work functions of the metal-graphene complexes. Within a certain bias range, the Fermi level of one of the contacts aligned with the electron band and that of the other contact aligned with the hole band.

Characterization of Contact Resistance between Carbon Nanotubes Film and Metal Electrodes

2013 ◽  
Vol 683 ◽  
pp. 238-241
Author(s):  
Ki Bong Han ◽  
Yong Ho Choi
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Contact Resistance ◽  
Chemical Properties ◽  
Metal Electrode ◽  
Metal Contacts ◽  
Metal Electrodes ◽  
3 Dimensional ◽  
Current Path ◽  
Classical Technique

Carbon nanotube has attracted great research attentions due to its outstanding electrical, physical, mechanical, chemical properties. Based on its excellent properties, the carbon nanotube is promising nanoscale material for novel electrical, mechanical, chemical, and biological devices and sensors. However, it is very difficult to control the structure of carbon nanotube during synthesis. A carbon nanotubes film has 3 dimensional structures of interwoven carbon nanotubes as well as unique properties such as transparency, flexibility and good electrical conductivity. More importantly, the properties of carbon nanotubes are ensemble averaged in this formation. In this research, we study the contact resistance between carbon nanotubes film and metal electrode. For most of electrical devices using carbon nanotubes film, it is necessary to have metal electrodes on the film for current path. A resistance at the contact lowers the electrical efficiencies of the devices. Therefore, it is important to measure and characterize the contact resistance and lower it for better efficiencies. The device demonstrated in this study using classical technique for metal contacts provides relatively reliable contact resistance measurements for carbon nanotubes film applications.

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning

Graphene for Magnetoresistive Junctions

2011 ◽  
Vol 1284 ◽  
Author(s):  
J. Inoue ◽  
T. Hiraiwa ◽  
R. Sato ◽  
A. Yamamura ◽  
S. Honda ◽  
...  
Keyword(s):  
Dirac Point ◽  
Electron Tunneling ◽  
Tight Binding ◽  
Metal Electrodes ◽  
Binding Model ◽  
Transition Metal Alloys ◽  
Dependent Change ◽  
Band Mixing ◽  
Junction Structure ◽  
Very High

ABSTRACTInfluence of the linear energy-momentum relationship in graphene on conductance and magnetoresistance (MR) in ferromagnetic metal (FM)/graphene/FM lateral junctions is studied in a numerical simulation formulated using the Kubo formula and recursive Green’s function method in a tight-binding model. It is shown that the contribution of electron tunneling through graphene should be considered in the electronic transport in metal/graphene/metal junctions, and that the Dirac point (DP) is effectively shifted by the band mixing between graphene and metal electrodes. It is shown that MR appears due to spin-dependent shift of DP or spin-dependent change in the electronic states at DPs. It is shown that the MR ratio caused by the latter mechanism can be very high when certain transition metal alloys are used for electrodes. These results do not essentially depend on the shape of the junction structure. However, to obtain high MR ratios, the effects of roughness should be small.

Mechanistic understanding of electrochemical plating and stripping of metal electrodes

2019 ◽  
Vol 7 (9) ◽  
pp. 4668-4688 ◽  
Author(s):  
Deepti Tewari ◽  
Partha P. Mukherjee
Keyword(s):  
Metal Electrode ◽  
Metal Electrodes ◽  
Electrode Interface ◽  
Mechanistic Understanding ◽  
Electrochemical Plating

Mechanisms driving the evolution of the metal electrode interface during plating, stripping and formation of dead metal.

Reply to: Dirac-point photocurrents due to photothermoelectric effect in non-uniform graphene devices

2020 ◽  
Vol 15 (4) ◽  
pp. 244-246
Author(s):  
Qiong Ma ◽  
Justin C. W. Song ◽  
Nathaniel M. Gabor ◽  
Pablo Jarillo-Herrero
Keyword(s):  
Dirac Point ◽  
Graphene Devices

scholarly journals Intercalation of Mn in graphene/Cu(111) interface: insights to the electronic and magnetic properties from theory

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Qilin Guo ◽  
Yuriy Dedkov ◽  
Elena Voloshina
Keyword(s):  
Fermi Level ◽  
Density Functional ◽  
Dirac Point ◽  
State Of The Art ◽  
Structural Models ◽  
Electronic States ◽  
Density Functional Theory Calculations ◽  
Linear Dispersion ◽  
Functional Theory ◽  
Favorable Configuration

AbstractThe effect of Mn intercalation on the atomic, electronic and magnetic structure of the graphene/Cu(111) interface is studied using state-of-the-art density functional theory calculations. Different structural models of the graphene–Mn–Cu(111) interface are investigated. While a Mn monolayer placed between graphene and Cu(111) (an unfavorable configuration) yields massive rearrangement of the graphene-derived $$\pi $$ π bands in the vicinity of the Fermi level, the possible formation of a $$\hbox {Cu}_2$$ Cu 2 Mn alloy at the interface (a favorable configuration) preserves the linear dispersion for these bands. The deep analysis of the electronic states around the Dirac point for the graphene/$$\hbox {Cu}_2$$ Cu 2 Mn/Cu(111) system allows to discriminate between contributions from three carbon sublattices of a graphene layer in this system and to explain the bands’ as well as spins’ topology of the electronic states around the Fermi level.

Impact of the functional group in the polyanion of single lithium-ion conducting polymer electrolytes on the stability of lithium metal electrodes

RSC Advances ◽  
2016 ◽  
Vol 6 (39) ◽  
pp. 32454-32461 ◽  
Author(s):  
Qiang Ma ◽  
Yu Xia ◽  
Wenfang Feng ◽  
Jin Nie ◽  
Yong-Sheng Hu ◽  
...  
Keyword(s):  
Polymer Electrolytes ◽  
Functional Group ◽  
Lithium Ion ◽  
Metal Electrode ◽  
Interfacial Stability ◽  
Lithium Metal ◽  
Metal Electrodes ◽  
Ion Conducting ◽  
The Stability ◽  
Ion Conducting Polymer

The functional group in the polyanion plays a key role in improving the interfacial stability of the Li metal electrode.

Low-Contact-Resistance Contacts to Graphene via Metal-Mediated Etching

2013 ◽  
Vol 1553 ◽  
Author(s):  
Wei Sun Leong ◽  
John T.L. Thong
Keyword(s):  
Contact Resistance ◽  
Promising Method ◽  
Pristine Graphene ◽  
Cmos Process ◽  
Metal Contacts ◽  
Ambient Conditions ◽  
Etching Technique ◽  
Graphene Devices

ABSTRACTThe theoretically-predicted enhancement of metal-graphene contacts using the “end-contacted” configuration is studied. Graphene edges at the source/drain regions are created via a CMOS process compatible metal-assisted etching technique. The on-resistance of a graphene device with cobalt-etched-graphene contacts shows 6 times improvement compared to pristine graphene device. Apart from that, four-point contacted graphene devices with nickel-etched-graphene contacts were fabricated and tested under ambient conditions. The proposed graphene devices exhibit contact resistance as low as 14 Ωμm, with an average of 90 Ωμm. Thus, forming metal-etched-graphene contacts is a promising method to obtain low-contact resistance metal contacts to graphene.

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