scholarly journals High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument withIn SituAFM

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
James A. Whitby ◽  
Fredrik Östlund ◽  
Peter Horvath ◽  
Mihai Gabureac ◽  
Jessica L. Riesterer ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Metal Ion ◽  
Secondary Ion Mass Spectrometry ◽  
High Spatial Resolution ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Time Of Flight ◽  
Ion Source ◽  
New Instrument ◽  
Secondary Ion

We describe the design and performance of an orthogonal time-of-flight (TOF) secondary ion mass spectrometer that can be retrofitted to existing focused ion beam (FIB) instruments. In particular, a simple interface has been developed for FIB/SEM instruments from the manufacturer Tescan. Orthogonal extraction to the mass analyser obviates the need to pulse the primary ion beam and does not require the use of monoisotopic gallium to preserve mass resolution. The high-duty cycle and reasonable collection efficiency of the new instrument combined with the high spatial resolution of a gallium liquid metal ion source allow chemical observation of features smaller than 50 nm. We have also demonstrated the integration of a scanning probe microscope (SPM) operated as an atomic force microscope (AFM) within the FIB/SEM-SIMS chamber. This provides roughness information, and will also allow true three dimensional chemical images to be reconstructed from SIMS measurements.

Microscale Elemental Imaging of Semiconductor Materials Using Focused Ion Beam Sims

1998 ◽  
Vol 4 (S2) ◽  
pp. 650-651 ◽  
Author(s):  
F. A. Stevie ◽  
S. W. Downey ◽  
S. Brown ◽  
T. Shofner ◽  
M. Decker ◽  
...  
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Ion Source ◽  
Comb Structure ◽  
Types Of Information ◽  
20 Nm ◽  
Secondary Ion

The semiconductor industry demands elemental information from ever smaller regions. Two types of information in demand are two dimensional dopant profiles for the MOS transisitor and identification of particles as small as 30 nm diameter. The work of Levi-Setti and others resulted in liquid metal ion source (LMIS) instruments that provided secondary ion mass spectrometry (SIMS) images using Ga+ beams with 20 nm lateral resolution. It is now possible to purchase focused ion beam (FIB) systems with 5 nm beam capability and SIMS detection.The application of LMIS SIMS to meet semiconductor demands has been pursued in our laboratory with a FEI-800 FIB. SIMS imaging of semiconductor patterns after etch has shown the ability to identify boron and carbon contamination. Figure 1 shows boron in a comb structure after a BC13 etch. The boron can be shown to be removed by a cleaning step.

Aspects of high-resolution imaging with a scanning ion microprobe

1986 ◽  
Vol 44 ◽  
pp. 750-751
Author(s):  
R. Levi-Setti ◽  
J. M. Chabala ◽  
Y. L. Wang
Keyword(s):  
Metal Ion ◽  
Secondary Ion Mass Spectrometry ◽  
Chromatic Aberration ◽  
Ion Source ◽  
Ion Microprobe ◽  
Emission Pattern ◽  
Intrinsic Resolution ◽  
Resolution Imaging ◽  
20 Nm ◽  
Secondary Ion

We have shown the feasibility of 20 nm lateral resolution in both topographic and elemental imaging using probes of this size from a liquid metal ion source (LMIS) scanning ion microprobe (SIM). This performance, which approaches the intrinsic resolution limits of secondary ion mass spectrometry (SIMS), was attained by limiting the size of the beam defining aperture (5μm) to subtend a semiangle at the source of 0.16 mr. The ensuing probe current, in our chromatic-aberration limited optical system, was 1.6 pA with Ga+ or In+ sources. Although unique applications of such low current probes have been demonstrated,) the stringent alignment requirements which they imposed made their routine use impractical. For instance, the occasional tendency of the LMIS to shift its emission pattern caused severe misalignment problems.

scholarly journals NanoSIMS imaging: an approach for visualizing and quantifying lipids in cells and tissues

2016 ◽  
Vol 65 (3) ◽  
pp. 669-672 ◽  
Author(s):  
Cuiwen He ◽  
Loren G Fong ◽  
Stephen G Young ◽  
Haibo Jiang
Keyword(s):  
Mass Spectrometry ◽  
Spatial Resolution ◽  
Mass Spectrometry Imaging ◽  
Secondary Ion Mass Spectrometry ◽  
High Spatial Resolution ◽  
High Sensitivity ◽  
New Approach ◽  
The Past ◽  
Secondary Ion ◽  
In Cells

Over the past few decades, several approaches have been used to image lipids in cells and tissues, but most have limited spatial resolution and sensitivity. Here, we discuss a relatively new approach, nanoscale secondary ion mass spectrometry imaging, that makes it possible to visualize lipids in cells and tissues in a quantitative fashion and with high spatial resolution and high sensitivity.

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