scholarly journals Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
G. A. Nemnes
Keyword(s):  
Boron Nitride ◽  
Spin Current ◽  
Building Blocks ◽  
Magnetic Impurities ◽  
First Principle ◽  
Spin Filter ◽  
Spintronic Devices ◽  
Current Switch ◽  
Boron Nitride Nanoribbons ◽  
Mn Doped

The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

scholarly journals Effect of Edge Fluorination on Electronic and Transport Properties of Aarmchair Boron Nitride Nanoribbons: A First-Principles Study

2021 ◽  
Vol 9 (VI) ◽  
pp. 4230-4235
Author(s):  
Dr. Hari Mohan Rai
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
First Principles ◽  
Magnetic Semiconductors ◽  
Spin Splitting ◽  
Local Spin Density Approximation ◽  
Half Metallicity ◽  
Spintronic Devices ◽  
Frame Work ◽  
Boron Nitride Nanoribbons

We have systematically investigated the effect of edge fluorination on structural stability, electronic and transport properties of armchair boron nitride nanoribbons (ABNNRs), using first-principles calculations within the frame work of local spin-density approximation (LSDA). ABNNRs with F-passivation on only edge B atoms, regardless of their width, are found to be half-metallic and energetically most stable. For these ribbons, completely spin polarized charge transport is predicted across the Fermi level as a result of giant spin splitting. Transmission spectrum analysis also confirms the separation of spin-up and spin-down electronic channels. It is revealed that F-passivation of only edge N atoms transforms nonmagnetic bare ribbons into magnetic semiconductors whereas fluorination of both the edges does not affect the electronic and magnetic state of bare ribbons significantly. Predicted Half-metallicity projects these ABNNRs as potential candidates for inorganic spintronic devices.

Edge defect switched dual spin filter in zigzag hexagonal boron nitride nanoribbons

2018 ◽  
Vol 20 (14) ◽  
pp. 9241-9247 ◽  
Author(s):  
Yan-Dong Guo ◽  
Hui-Feng Liu ◽  
Hong-Li Zeng ◽  
Xiao-Hong Yan ◽  
Xiao-Chen Song
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Spin Filter ◽  
Edge Defect ◽  
Edge Defects ◽  
Boron Nitride Nanoribbons

Edge defects make a zigzag hexagonal boron nitride nanoribbon operate as a dual-spin filter, and this is not affected by the ribbon's width and the defect's length.

scholarly journals 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hafnium Oxide ◽  
High Speed ◽  
Hexagonal Boron Nitride ◽  
Temperature Stability ◽  
Cost Effective ◽  
Fold Increase ◽  
Building Blocks ◽  
High Quality ◽  
New Device

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

Electronic and optical properties of O-doped porous boron nitride: A first principle study

2021 ◽  
Vol 299 ◽  
pp. 122139
Author(s):  
Yan Liu ◽  
Lanlan Li ◽  
Qiaoling Li ◽  
Xinghua Zhang ◽  
Zunming Lu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Boron Nitride ◽  
First Principle ◽  
Electronic And Optical Properties

Electronic Structure and Reactivity of Boron Nitride Nanoribbons with Stone-Wales Defects

2009 ◽  
Vol 5 (11) ◽  
pp. 3088-3095 ◽  
Author(s):  
Wei Chen ◽  
Yafei Li ◽  
Guangtao Yu ◽  
Zhen Zhou ◽  
Zhongfang Chen
Keyword(s):  
Electronic Structure ◽  
Boron Nitride ◽  
Boron Nitride Nanoribbons

Boron nitride zigzag nanoribbons: optimal thermoelectric systems

2015 ◽  
Vol 17 (34) ◽  
pp. 22448-22454 ◽  
Author(s):  
K. Zberecki ◽  
R. Swirkowicz ◽  
J. Barnaś
Keyword(s):  
Density Functional Theory ◽  
Boron Nitride ◽  
Density Functional ◽  
Thermoelectric Effects ◽  
Functional Theory ◽  
Thermoelectric Systems ◽  
The Density Functional Theory ◽  
Boron Nitride Nanoribbons

Conventional and spin related thermoelectric effects in zigzag boron nitride nanoribbons are studied theoretically within the Density Functional Theory (DFT) approach.

The thermal conductivity in hybridised graphene and boron nitride nanoribbons modulated with strain

2016 ◽  
Vol 49 (11) ◽  
pp. 115301 ◽  
Author(s):  
Xue-Kun Chen ◽  
Zhong-Xiang Xie ◽  
Wu-Xing Zhou ◽  
Ke-Qiu Chen
Keyword(s):  
Thermal Conductivity ◽  
Boron Nitride ◽  
Boron Nitride Nanoribbons
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