scholarly journals Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Kangho Kim ◽  
Hoang Duy Nguyen ◽  
Sunil Mho ◽  
Jaejin Lee
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Aluminum Oxide ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Window Layer ◽  
Anodized Aluminum ◽  
Etching Depth ◽  
Inverted Cone ◽  
Nanohole Arrays

The GaAs solar cells are grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and fabricated by photolithography, metal evaporation, annealing, and wet chemical etch processes. Anodized aluminum oxide (AAO) masks are prepared from an aluminum foil by a two-step anodization method. Inductively coupled plasma dry etching is used to etch and define the nanoarray structures on top of an InGaP window layer of the GaAs solar cells. The inverted-cone-shaped nanoholes with a surface diameter of about 50 nm are formed on the top surface of the solar cells after the AAO mask removal. Photovoltaic and optical characteristics of the GaAs solar cells with and without the nanohole arrays are investigated. The reflectance of the AAO nanopatterned samples is lower than that of the planar GaAs solar cell in the measured range. The short-circuit current density increased up to 11.63% and the conversion efficiency improved from 10.53 to 11.57% under 1-sun AM 1.5 G conditions by using the nanohole arrays. Dependence of the efficiency enhancement on the etching depth of the nanohole arrays is also investigated. These results show that the nanohole arrays fabricated with an AAO technique may be employed to improve the light absorption and, in turn, the conversion efficiency of the GaAs solar cell.

Chemical Composition Dependence of Cu2ZnSnS4 Absorbers Fabricated by Sulfurization of Thermal Evaporated Metal Precursors and Solar Cell Performance

2015 ◽  
Vol 1738 ◽  
Author(s):  
Liyuan Zhang ◽  
Sreejith Karthikeyan ◽  
Mandip J. Sibakoti ◽  
Stephen A. Campbell
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Chemical Composition ◽  
Conversion Efficiency ◽  
Small Deviation ◽  
Short Circuit ◽  
Cell Performance ◽  
Czts Thin Film ◽  
Solar Cell Performance

ABSTRACTWe investigate the synthesis of kesterite Cu2ZnSnS4 (CZTS) thin films using thermal evaporation from copper, zinc and tin pellets and post-annealing in a sulfur atmosphere. The effects of chemical composition were studied both on the absorber layer properties and on the final solar cell performance. It is confirmed that CZTS thin film chemical composition affects the carrier concentration profile, which then influences the solar cell properties. Solar cells using a CZTS thin film with composition ratio Cu/(Zn+Sn) = 0.87, and Zn/Sn = 1.24 exhibited an open-circuit voltage of 483 mV, a short-circuit current of 14.54 mA/cm2, a fill factor of 37.66 % and a conversion efficiency of 2.64 %. Only a small deviation from the optimal chemical composition can drop device performance to a lower level, which confirms that the CZTS solar cells with high conversion efficiency existed in a relatively narrow composition region.

Effect of Ge Thin Layer Position on Formation and Property of CZTSSe Thin Films and Solar Cells Prepared by Sputtering Method

2017 ◽  
Vol 895 ◽  
pp. 23-27
Author(s):  
Jin Ze Li ◽  
Hong Lie Shen ◽  
Yu Fang Li ◽  
Wei Wang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Layer ◽  
Conversion Efficiency ◽  
Bottom Layer ◽  
Window Layer ◽  
Structural Morphology ◽  
Ge Doping ◽  
Layer Position

In this work we deposited a Ge thin layer under or upon Cu-Zn-Sn-S precursor by sputtering, followed by selenization process to obtain Ge doped CZTSSe thin films. A comparison of structural, morphology and optoelectrical property on Ge doped CZTSSe thin films with different Ge layer position was studied. It was found that even a little amount of Ge doping could affect the crystallization of CZTSSe grains. The solar cells based on two kinds of precursors both had VOC improvement compared with undoped CZTSSe solar cell. However, due to the inner stress in CZTSSe thin film, cracks appeared between the interface of buffer layer and window layer in CZTSSe solar cell with Ge bottom layer, leading to the decrease of conversion efficiency. With the help of Ge in reducing bulk recombination, CZTSSe solar cell based on Cu-Zn-Sn-S precursor with Ge top layer had a conversion efficiency of 5.38%, in contrast to 3.01% and 4.30% of CZTSSe solar cell with Ge bottom layer and undoped CZTSSe solar cell, respectively.

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Xinxia Zheng ◽  
Shengzhi Xu ◽  
Changchun Wei ◽  
...  
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Single Chamber ◽  
P Type

ABSTRACTIn this article, we present a study of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) films by very high frequency-plasma enhanced chemical vapor deposition (VHF-PECVD) using high deposition pressure. Electrical, structural and optical properties of the films were investigated. Dark conductivity as high as 2.75S/cm of p-type nc-Si: H prepared at 2.5Torr pressure has been achieved at a deposition rate of 1.75Å/s for 25nm thin film. By controlling boron and phosphorus contamination, single junction nc-Si: H solar cells incorporated p-layers prepared under high pressure and low pressure, respectively, were deposited. It has been proven that nanocrystalline silicon solar cells with incorporation of p layer prepared at high pressure has resulted in enhanced open circuit voltage, short circuit current density and subsequently high conversion efficiency. Through the optimization of the bottom solar cell and application of ZnO/Al back reflector, 10.59% initial conversion efficiency of micromorph tandem solar cell (1.027cm2) with an open circuit voltage of 1.3864V, has been fabricated, where the bottom solar cell using a high pressure p layer was deposited in a single chamber.

scholarly journals Novel Photonic Crystal Based Polycrystalline CdTe/Silicon Solar Cells

2020 ◽  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Photonic Crystal ◽  
Conversion Efficiency ◽  
Current Density ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silicon Solar Cells

In this paper, a novel photonic crystal (PhC) polycrystalline CdTe/Silicon solar cells are theoretically explained that increase their short circuit current density and conversion efficiency. The proposed structure consist of a polycrystalline CdTe/Silicon solar cell that a photonic crystal is formed in the upper cell. The optical confinement is achieved by means of photonic crystal that can adjust the propagation and distribution of photons in solar cells. For validation of modeling, the electrical properties of the experimentally-fabricated based CdS/CdTe solar cell is modeled and compared that there is good agreement between the modeling results and experimental results from the litterature. The results of this study showed that the solar cell efficiency is increased by about 25% compared to the reference cell by using photonic crystal. The open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1.01 V, 40.7 mA/cm2, 0.95 and 27% under global AM 1.5 conditions, respectively. Furthermore, the influence of carrier lifetime variation in the absorber layer of proposed solar cell on the electrical characteristics was theoretically considered and investigated.

scholarly journals Optimization of Antireflection Coating Design Using PC1D Simulation for c − Si Solar Cell Application

Electronics ◽  
2021 ◽  
Vol 10 (24) ◽  
pp. 3132
Author(s):  
Maruthamuthu Subramanian ◽  
Omar M. Aldossary ◽  
Manawwer Alam ◽  
Mohd Ubaidullah ◽  
Sreedevi Gedi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Single Layer ◽  
Antireflection Coating ◽  
Silicon Solar Cells ◽  
Refractive Indices ◽  
Solar Cell Application ◽  
The Impact

Minimizing the photon losses by depositing an anti-reflection layer can increase the conversion efficiency of the solar cells. In this paper, the impact of anti-reflection coating (ARC) for enhancing the efficiency of silicon solar cells is presented. Initially, the refractive indices and reflectance of various ARC materials were computed numerically using the OPAL2 calculator. After which, the reflectance of SiO2,TiO2,SiNx with different refractive indices (n) were used for analyzing the performance of a silicon solar cells coated with these materials using PC1D simulator. SiNx and TiO2 as single-layer anti-reflection coating (SLARC) yielded a short circuit current density (Jsc) of 38.4 mA/cm2 and 38.09mA/cm2 respectively. Highest efficiency of 20.7% was obtained for the SiNx ARC layer with n=2.15. With Double-layer anti-reflection coating (DLARC), the Jsc improved by ∼0.5 mA/cm2 for SiO2/SiNx layer and hence the efficiency by 0.3%. Blue loss reduces significantly for the DLARC compared with SLARC and hence increase in Jsc by 1 mA/cm2 is observed. The Jsc values obtained is in good agreement with the reflectance values of the ARC layers. The solar cell with DLARC obtained from the study showed that improved conversion efficiency of 21.1% is obtained. Finally, it is essential to understand that the key parameters identified in this simulation study concerning the DLARC fabrication will make experimental validation faster and cheaper.

scholarly journals Numerical Modeling of High Conversion Efficiency Mo/CZTS/CdS/ZnO/ FTO Thin Film – Based Solar Cells

2021 ◽  
Author(s):  
Samer H. Zyoud ◽  
Ahed H. Zyoud ◽  
Naser M. Ahmed ◽  
Anupama R. Prasad ◽  
Sohaib Naseem Khan ◽  
...  
Keyword(s):  
Thin Film ◽  
Numerical Modeling ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Short Circuit ◽  
Photovoltaic Cells ◽  
Effect Of Temperature ◽  
Cell Parameters

This article describes in detail the numerical modeling of a CZTS (copper zinc tin sulfide) based kesterite solar cell. The Solar Cell Capacitance Simulator -one-dimension (SCAPS-1D) software was used to simulate MO/CZTS/CdS/ZnO/FTO structured solar cells. The parameters of different photovoltaic thin-film solar cells are estimated and analyzed using numerical modeling. The effects of various parameters on the performance of the photovoltaic cell and the conversion efficiency are discussed. Since the response of the solar cell is also contingent on its internal physical mechanism, J-V characteristic measures are insufficient to characterize the behavior of a device. Different features, as well as different potential conditions, must be considered for simulation, disregarding the belief in the modeling of a solar cell. With a conversion efficiency of 25.72%, a fill factor of 83.75%, a short-circuit current of 32.96436 mA/cm2 and an open-circuit voltage of 0.64V, promising optimized results have been achieved. The findings will be useful in determining the feasibility of fabricating high-efficiency CZTS-based photovoltaic cells. The efficiency of a CZTS-based experimental solar cell is also discussed. First, the effects of experimentally developed CZTS solar cells are simulated in the SCAPS-1D environment. The experimental results are then compared to the SCAPS-1D simulated results. The conversion efficiency of an optimized system increases after cell parameters are optimized. Using one-dimensional SCAPS-1D software, the effect of system parameters such as the thickness, acceptor and donor carrier concentration densities of absorber and electron transport layers, and the effect of temperature on the efficiency of CZTS-based photovoltaic cells is investigated. The proposed results will greatly assist engineers and researchers in determining the best method for optimizing solar cell efficiency, as well as in the development of efficient CZTS-based solar cells.

High-Efficiency HIT Solar Cells for Excellent Power Generating Properties

2008 ◽  
Vol 1123 ◽  
Author(s):  
Toshihiro Kinoshita ◽  
Daisuke Ide ◽  
Yasufumi Tsunomura ◽  
Shigeharu Taira ◽  
Toshiaki Baba ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Production Cost ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Dominant Factor

AbstractIn order to achieve the widespread use of HIT (Hetero-junction with I etero-Intrinsic T ntrinsic Thin-layer) solar cells, it is important to reduce the power generating cost. There are three main approaches for reducing this cost: raising the conversion efficiency of the HIT cell, using a thinner wafer to reduce the wafer cost, and raising the open circuit voltage to obtain a better temperature coefficient. With the first approach, we have achieved the highest conversion efficiency values of 22.3%, confirmed by AIST, in a HIT solar cell. This cell has an open circuit voltage of 0.725 V, a short circuit current density of 38.9 mA/cm2 and a fill factor of 0.791, with a cell size of 100.5 cm2. The second approach is to use thinner Si wafers. The shortage of Si feedstock and the strong requirement of a lower sales price make it necessary for solar cell manufacturers to reduce their production cost. The wafer cost is an especially dominant factor in the production cost. In order to provide low-priced, high-quality solar cells, we are trying to use thinner wafers. We obtained a conversion efficiency of 21.4% (measured by Sanyo) for a HIT solar cell with a thickness of 85μm. Even better, there was absolutely no sagging in our HIT solar cell because of its symmetrical structure. The third approach is to raise the open circuit voltage. We obtained a remarkably higher Voc of 0.739 V with the thinner cell mentioned above because of its low surface recombination velocity. The high Voc results in good temperature properties, which allow it to generate a large amount of electricity at high temperatures.

scholarly journals Numerical Modeling of High Conversion Efficiency FTO/ZnO/CdS/CZTS/MO Thin Film-Based Solar Cells: Using SCAPS-1D Software

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1468
Author(s):  
Samer H. Zyoud ◽  
Ahed H. Zyoud ◽  
Naser M. Ahmed ◽  
Anupama R. Prasad ◽  
Sohaib Naseem Khan ◽  
...  
Keyword(s):  
Thin Film ◽  
Numerical Modeling ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Short Circuit ◽  
Effect Of Temperature ◽  
Solar Cell Performance ◽  
The Impact

The numerical modeling of a copper zinc tin sulfide (CZTS)-based kesterite solar cell is described in detail in this article. To model FTO/ZnO/CdS/CZTS/MO structured solar cells, the Solar Cell Capacitance Simulator-one-dimension (SCAPS-1D) program was utilized. Numerical modeling was used to estimate and assess the parameters of various photovoltaic thin film solar cells. The impact of different parameters on solar cell performance and conversion efficiency were explored. Because the response of a solar cell is partly determined by its internal physical mechanism, J-V characteristic characteristics are insufficient to define a device’s behavior. Regardless of the conviction in solar cell modeling, variable attributes as well as many probable conditions must be handled for simulation. Promising optimized results were obtained with a conversion efficiency of (η% = 25.72%), a fill factor of (FF% = 83.75%), a short-circuit current of (JSC  = 32.96436 mA/cm2), and an open-circuit voltage of (VOC = 0.64 V). The findings will aid in determining the feasibility of manufacturing high-efficiency CZTS-based solar cells. First, in the SCAPS-1D environment, the impacts of experimentally constructed CZTS solar cells were simulated. The experimental data was then compared to the simulated results from SCAPS-1D. After optimizing cell parameters, the conversion efficiency of the improved system was observed to rise. The influence of system factors, such as the thickness, acceptor, and donor carrier concentration densities of the absorber and electron transport layers, and the effect of temperature on the efficiency of CZTS-based photovoltaic cells, was explored using one-dimensional SCAPS-1D software. The suggested findings will be extremely useful to engineers and researchers in determining the best method for maximizing solar cell efficiency, as well as in the development of more efficient CZTS-based solar cells.

scholarly journals Enhancement of Spectral Response inμc-Si1-xGex:H Thin-Film Solar Cells with a-Si:H/μc-Si:H P-Type Window Layers

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Yen-Tang Huang ◽  
Cheng-Hang Hsu ◽  
Chuang-Chuang Tsai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Spectral Response ◽  
Short Circuit ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Microcrystalline Silicon ◽  
P Type ◽  
20 Nm

The hydrogenated amorphous silicon (a-Si:H)/hydrogenated microcrystalline silicon (μc-Si:H) double p-type window layer has been developed and applied for improving microcrystalline silicon-germanium p-i-n single-junction thin-film solar cells deposited on textured SnO2:F-coated glass substrates. The substrates of SnO2:F, SnO2:F/μc-Si:H(p), and SnO2:F/a-Si:H(p) were exposed to H2plasma to investigate the property change. Our results showed that capping a thin layer of a-Si:H(p) on SnO2:F can minimize the Sn reduction during the deposition process which had H2-containing plasma. Optical measurement has also revealed that a-Si:H(p) capped SnO2:F glass had a higher optical transmittance. When the 20 nmμc-Si:H(p) layer was replaced by a 3 nm a-Si:H(p)/17 nmμc-Si:H(p) double window layer in the cell, the conversion efficiency (η) and the short-circuit current density (JSC) were increased by 16.6% and 16.4%, respectively. Compared to the standard cell with the 20 nmμc-Si:H(p) window layer, an improved conversion efficiency of 6.19% can be obtained for the cell having a-Si:H(p)/μc-Si:H(p) window layer, withVOC = 490 mV,JSC = 19.50 mA/cm2, and FF = 64.83%.

scholarly journals Damp-Heat Induced Performance Degradation for InGaP/GaAs/Ge Triple-Junction Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hwen-Fen Hong ◽  
Tsung-Shiew Huang ◽  
Wu-Yih Uen ◽  
Yen-Yeh Chen
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Triple Junction ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Open Circuit

We performed accelerated tests on sealed and nonsealed InGaP/InGaAs/Ge triple-junction (TJ) solar cells in a complex high temperature and high humidity environment and investigated the electrical properties over time. The degradation of energy conversion efficiency in nonsealed cells was found to be more serious than that in sealed cells. The short-circuit current (ISC), open-circuit voltage (VOC), and fill factor (FF) of sealed cells changed very slightly, though the conversion efficiency decreased 3.6% over 500 h of exposure. This decrease of conversion efficiency was suggested to be due to the deterioration of silicone encapsulant. TheISC,VOC, and FF of nonsealed cells decreased with increasing exposure time. By EL and SEM analysis, the root causes of degradation can be attributed to the damage and cracks near the edge of cells induced by the moisture ingress. It resulted in shunt paths that lead to a deterioration of the conversion efficiency of solar cell by increasing the leakage current, as well as decreasing open-circuit voltage and fill factor of nonsealed solar cells.

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