scholarly journals Optimization of Antireflection Coating Design Using PC1D Simulation for c − Si Solar Cell Application

Electronics ◽  
2021 ◽  
Vol 10 (24) ◽  
pp. 3132
Author(s):  
Maruthamuthu Subramanian ◽  
Omar M. Aldossary ◽  
Manawwer Alam ◽  
Mohd Ubaidullah ◽  
Sreedevi Gedi ◽  
...  

Minimizing the photon losses by depositing an anti-reflection layer can increase the conversion efficiency of the solar cells. In this paper, the impact of anti-reflection coating (ARC) for enhancing the efficiency of silicon solar cells is presented. Initially, the refractive indices and reflectance of various ARC materials were computed numerically using the OPAL2 calculator. After which, the reflectance of SiO2,TiO2,SiNx with different refractive indices (n) were used for analyzing the performance of a silicon solar cells coated with these materials using PC1D simulator. SiNx and TiO2 as single-layer anti-reflection coating (SLARC) yielded a short circuit current density (Jsc) of 38.4 mA/cm2 and 38.09mA/cm2 respectively. Highest efficiency of 20.7% was obtained for the SiNx ARC layer with n=2.15. With Double-layer anti-reflection coating (DLARC), the Jsc improved by ∼0.5 mA/cm2 for SiO2/SiNx layer and hence the efficiency by 0.3%. Blue loss reduces significantly for the DLARC compared with SLARC and hence increase in Jsc by 1 mA/cm2 is observed. The Jsc values obtained is in good agreement with the reflectance values of the ARC layers. The solar cell with DLARC obtained from the study showed that improved conversion efficiency of 21.1% is obtained. Finally, it is essential to understand that the key parameters identified in this simulation study concerning the DLARC fabrication will make experimental validation faster and cheaper.

In this paper, a novel photonic crystal (PhC) polycrystalline CdTe/Silicon solar cells are theoretically explained that increase their short circuit current density and conversion efficiency. The proposed structure consist of a polycrystalline CdTe/Silicon solar cell that a photonic crystal is formed in the upper cell. The optical confinement is achieved by means of photonic crystal that can adjust the propagation and distribution of photons in solar cells. For validation of modeling, the electrical properties of the experimentally-fabricated based CdS/CdTe solar cell is modeled and compared that there is good agreement between the modeling results and experimental results from the litterature. The results of this study showed that the solar cell efficiency is increased by about 25% compared to the reference cell by using photonic crystal. The open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1.01 V, 40.7 mA/cm2, 0.95 and 27% under global AM 1.5 conditions, respectively. Furthermore, the influence of carrier lifetime variation in the absorber layer of proposed solar cell on the electrical characteristics was theoretically considered and investigated.


Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1468
Author(s):  
Samer H. Zyoud ◽  
Ahed H. Zyoud ◽  
Naser M. Ahmed ◽  
Anupama R. Prasad ◽  
Sohaib Naseem Khan ◽  
...  

The numerical modeling of a copper zinc tin sulfide (CZTS)-based kesterite solar cell is described in detail in this article. To model FTO/ZnO/CdS/CZTS/MO structured solar cells, the Solar Cell Capacitance Simulator-one-dimension (SCAPS-1D) program was utilized. Numerical modeling was used to estimate and assess the parameters of various photovoltaic thin film solar cells. The impact of different parameters on solar cell performance and conversion efficiency were explored. Because the response of a solar cell is partly determined by its internal physical mechanism, J-V characteristic characteristics are insufficient to define a device’s behavior. Regardless of the conviction in solar cell modeling, variable attributes as well as many probable conditions must be handled for simulation. Promising optimized results were obtained with a conversion efficiency of (η% = 25.72%), a fill factor of (FF% = 83.75%), a short-circuit current of (JSC  = 32.96436 mA/cm2), and an open-circuit voltage of (VOC = 0.64 V). The findings will aid in determining the feasibility of manufacturing high-efficiency CZTS-based solar cells. First, in the SCAPS-1D environment, the impacts of experimentally constructed CZTS solar cells were simulated. The experimental data was then compared to the simulated results from SCAPS-1D. After optimizing cell parameters, the conversion efficiency of the improved system was observed to rise. The influence of system factors, such as the thickness, acceptor, and donor carrier concentration densities of the absorber and electron transport layers, and the effect of temperature on the efficiency of CZTS-based photovoltaic cells, was explored using one-dimensional SCAPS-1D software. The suggested findings will be extremely useful to engineers and researchers in determining the best method for maximizing solar cell efficiency, as well as in the development of more efficient CZTS-based solar cells.


2021 ◽  
Author(s):  
Saba Siraj ◽  
Sofia Akbar Tahir ◽  
Adnan Ali

Abstract The aim of this research work was to assess the impact of front and rear grid metallization pattern on the performance of silicon solar cells. We have investigated the effect of front grid metallization design and geometry on the open-circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and efficiency (ŋ) of silicon solar cells by using Griddler 2.5 simulation program. We used different number of metal fingers ranging from 80–120 having width of 60 µm and different number of busbars ranging from 1–5 busbars on the front and rear side of solar cells for optimization. We have also calculated the efficiency and fill factor at different values of front contact resistance ranging from (0.1–100) mohm-cm2, front and rare layer sheet resistances ranging from (60–110) ohm/sq and different edge gaps. We found that the maximum efficiency and fill factor was obtained with those parameters, when front and rare contact resistances were taken as same. We have designed an optimized silicon solar cell with 115 number of fingers, 4 busbars, front and rare contact resistance of 0.1 mohm-cm2 and front and rare layer sheet resistance of 60 ohm/sq. In this way we were able to successfully optimize the silicon solar cell having efficiency and fill factor of 19.49 % and 81.36 % respectively, for our best optimized silicon solar cell.


2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Minghua Li ◽  
Hui Shen ◽  
Lin Zhuang ◽  
Daming Chen ◽  
Xinghua Liang

In this work we prepared double-layer antireflection coatings (DARC) by using the SiO2/SiNx:H heterostructure design. SiO2thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC), while to avoid the coverage of SiO2on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE) in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2(105 nm)/SiNx:H (80 nm) DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.


2015 ◽  
Vol 1738 ◽  
Author(s):  
Liyuan Zhang ◽  
Sreejith Karthikeyan ◽  
Mandip J. Sibakoti ◽  
Stephen A. Campbell

ABSTRACTWe investigate the synthesis of kesterite Cu2ZnSnS4 (CZTS) thin films using thermal evaporation from copper, zinc and tin pellets and post-annealing in a sulfur atmosphere. The effects of chemical composition were studied both on the absorber layer properties and on the final solar cell performance. It is confirmed that CZTS thin film chemical composition affects the carrier concentration profile, which then influences the solar cell properties. Solar cells using a CZTS thin film with composition ratio Cu/(Zn+Sn) = 0.87, and Zn/Sn = 1.24 exhibited an open-circuit voltage of 483 mV, a short-circuit current of 14.54 mA/cm2, a fill factor of 37.66 % and a conversion efficiency of 2.64 %. Only a small deviation from the optimal chemical composition can drop device performance to a lower level, which confirms that the CZTS solar cells with high conversion efficiency existed in a relatively narrow composition region.


2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Xinxia Zheng ◽  
Shengzhi Xu ◽  
Changchun Wei ◽  
...  

ABSTRACTIn this article, we present a study of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) films by very high frequency-plasma enhanced chemical vapor deposition (VHF-PECVD) using high deposition pressure. Electrical, structural and optical properties of the films were investigated. Dark conductivity as high as 2.75S/cm of p-type nc-Si: H prepared at 2.5Torr pressure has been achieved at a deposition rate of 1.75Å/s for 25nm thin film. By controlling boron and phosphorus contamination, single junction nc-Si: H solar cells incorporated p-layers prepared under high pressure and low pressure, respectively, were deposited. It has been proven that nanocrystalline silicon solar cells with incorporation of p layer prepared at high pressure has resulted in enhanced open circuit voltage, short circuit current density and subsequently high conversion efficiency. Through the optimization of the bottom solar cell and application of ZnO/Al back reflector, 10.59% initial conversion efficiency of micromorph tandem solar cell (1.027cm2) with an open circuit voltage of 1.3864V, has been fabricated, where the bottom solar cell using a high pressure p layer was deposited in a single chamber.


2013 ◽  
Vol 678 ◽  
pp. 365-368
Author(s):  
Rangasamy Balasundraprabhu ◽  
E.V. Monakhov ◽  
N. Muthukumarasamy ◽  
B.G. Svensson

Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.


2014 ◽  
Vol 92 (7/8) ◽  
pp. 920-923 ◽  
Author(s):  
Hidetoshi Wada ◽  
Keiichi Nishikubo ◽  
Porponth Sichanugrist ◽  
Makoto Konagai

Light trapping effect using rough surface transparent conductive oxide (TCO) is one of the best ways to achieve high efficiency thin-film silicon solar cells. Several types of rough ZnO film fabricated by metal organic chemical vapor deposition technique onto the glass, which are etched by reactive ion etching, have been proposed so far as promising TCO substrates. In this paper, newly developed ZnO substrate with extremely high light scattering property comparing with typical pyramidal texture one was developed. By applying this newly developed ZnO substrate to the solar cell, higher short circuit current of about 2% has been achieved comparing with typical pyramidal texture one without sacrificing other parameters. This result showed that the newly developed substrate is suitable as a front TCO substrate for high performance thin-film silicon solar cell.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Kangho Kim ◽  
Hoang Duy Nguyen ◽  
Sunil Mho ◽  
Jaejin Lee

The GaAs solar cells are grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and fabricated by photolithography, metal evaporation, annealing, and wet chemical etch processes. Anodized aluminum oxide (AAO) masks are prepared from an aluminum foil by a two-step anodization method. Inductively coupled plasma dry etching is used to etch and define the nanoarray structures on top of an InGaP window layer of the GaAs solar cells. The inverted-cone-shaped nanoholes with a surface diameter of about 50 nm are formed on the top surface of the solar cells after the AAO mask removal. Photovoltaic and optical characteristics of the GaAs solar cells with and without the nanohole arrays are investigated. The reflectance of the AAO nanopatterned samples is lower than that of the planar GaAs solar cell in the measured range. The short-circuit current density increased up to 11.63% and the conversion efficiency improved from 10.53 to 11.57% under 1-sun AM 1.5 G conditions by using the nanohole arrays. Dependence of the efficiency enhancement on the etching depth of the nanohole arrays is also investigated. These results show that the nanohole arrays fabricated with an AAO technique may be employed to improve the light absorption and, in turn, the conversion efficiency of the GaAs solar cell.


2021 ◽  
Vol 2128 (1) ◽  
pp. 012009
Author(s):  
Hassan Ismail Abdalmageed ◽  
Mostafa Fedawy ◽  
Moustafa H. Aly

Abstract This article uses computational models to evaluate the potential of copper-indium-gallium-diselenide (CIGS) thin film solar cells. The use of cadmium sulphide (CdS) renders the solar cell environmentally hazardous. A zinc sulphide (ZnS) that is non-toxic and has a large bandgap is studied as a potential replacement for cadmium sulphide in CIGS-based solar cells. The present research focuses on the impact of the CIGS-based solar cell bandgap absorber layer by increasing the absorber layer thickness (0.1-2 μm) using the solar cell simulator simulation tool SCAPS. The basic simulation produces 18.2 % efficiency with a CdS buffer layer, which is 9.95% better than the previously published work. The Simulated efficiency is 22.16% for the CIGS solar cell using ZnS. The simulation of solar cell characteristics of how the thickness of the absorber layer, the gallium grading (efficiency ranges up to 22.25 %) is demonstrated, showing the effect of buffer layer (ZnS) on the current of short-circuit density (JSC), open-circuit voltage (Voc), fill factor (FF), and efficiency (η) of the solar cell.


Sign in / Sign up

Export Citation Format

Share Document