Tuning NBE emission and optical band gap of nanocrystalline ZnO thin films using Fe dopant

2018 ◽  
Vol 5 (3) ◽  
pp. 9089-9093 ◽  
Author(s):  
Nishant Kumar ◽  
Anu Katiyar ◽  
Anchal Srivastava
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Thin Films

STRUCTURAL AND OPTICAL PROPERTIES OF UNDOPED AND SILVER, LITHIUM AND COBALT-DOPED ZnO THIN FILMS

2019 ◽  
Vol 27 (04) ◽  
pp. 1950138
Author(s):  
FATMA MEYDANERİ TEZEL ◽  
İ. AFŞIN KARİPER
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Refraction Index ◽  
Zno Thin Films ◽  
High Temperature Furnace ◽  
Doped Zno ◽  
Ray Patterns ◽  
Temperature Furnace

Undoped and silver, lithium and cobalt-doped ZnO thin films have been successfully deposited on glass by chemical bath deposition (CBD). The reaction temperature was 50∘C and the films were annealed at 400∘C for 4[Formula: see text]h in a high temperature furnace. UV/VIS spectrum was used to determine optical transmittance, optical band gap ([Formula: see text] and absorbance values of Ag:ZnO, Co:ZnO, Li:ZnO and undoped ZnO thin films. Optical band gap ([Formula: see text] and absorbance values of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were found as 0.0158, 0.0064, 0.2638, 0.0956 and 3.24, 3.13, 3.27, 2.96 eV, respectively. Extinction coefficients and refraction indexes of the films were found to be 0.0096, 0.0038, 0.0068, 0.019 (extinction coefficient) and 1.26, 1.14, 1.66, 2.33 (refraction index), respectively. X-ray patterns of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were confirmed as amorphous.

scholarly journals Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
M. Acosta ◽  
I. Riech ◽  
E. Martín-Tovar
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Rf Sputtering ◽  
Argon Pressure ◽  
Band Gaps ◽  
Zno Thin Films ◽  
Optical Band Gaps

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

2013 ◽  
Vol 531 ◽  
pp. 430-435 ◽  
Author(s):  
Won Mok Kim ◽  
Jin Soo Kim ◽  
Jeung-hyun Jeong ◽  
Jong-Keuk Park ◽  
Young-Jun Baik ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Conduction Band ◽  
Optical Band Gap ◽  
Zno Thin Films ◽  
Impurity Doped ◽  
Doped Zno

Optical band‐gap shrinkage in highly transparent and conducting ZnO thin films deposited by the Pyrosol process

1994 ◽  
Vol 76 (3) ◽  
pp. 1992-1994 ◽  
Author(s):  
A. Tiburcio‐Silver ◽  
J. C. Joubert ◽  
M. Labeau
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Thin Films

Effect of stress on optical band gap of ZnO thin films with substrate temperature by spray pyrolysis

2009 ◽  
Vol 485 (1-2) ◽  
pp. 413-417 ◽  
Author(s):  
T. Prasada Rao ◽  
M.C. Santhosh Kumar ◽  
S. Anbumozhi Angayarkanni ◽  
M. Ashok
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Optical Band Gap ◽  
Zno Thin Films
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