Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying
2014 ◽
Vol 2014
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pp. 1-6
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Keyword(s):
Zno Film
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This work presents a novel white light source. An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode. A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the silicon substrate. A white broad band at the room temperature photoluminescence ranging from 420 to 650 nm for the ZnO:YAG/silicon nanostructure diode was observed. The white broad band consists of the emissions of defect level transition of the ZnO film and the5D4level to the7F6and7F5level transitions of Ce3+ions.
2006 ◽
Vol 21
(09)
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pp. 2185-2190
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Keyword(s):
2008 ◽
Vol 255
(5)
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pp. 2052-2056
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Keyword(s):
2004 ◽
Vol 393
(1-3)
◽
pp. 256-259
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2009 ◽
Vol 404
(20)
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pp. 3732-3738
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2009 ◽
Vol 113
(46)
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pp. 20044-20049
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Keyword(s):
1994 ◽
pp. 2553
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