Sensitivity to NO2 of ZnO Film Prepared by Electrostatic-Enhanced Ultrasonic Spray Pyrolysis

The NO2-sensing properties of the ZnO films prepared by EUSP were investigated. Effect of substrate temperature on the NO2-sensing properties of ZnO films showed that the powder-like ZnO film deposited at 550°C was more sensitive to NO2, and the film illustrated good response-restoration property. Besides, the influence of doping amount on the NO2-sensing properties of the ZnO films at 260°C showed that the ZnO:Al film with the Al content of 0.4mol% presented the best sensitivity, and the ZnO: 3mol % Ag exhibited the highest NO2 sensitivity. The dynamic response tests indicated that the ZnO: Al film was of the highest sensitivity to NO2, and the sensitivity of ZnO: Ag film was lowest.

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Influence of substrate temperature on ultraviolet emission of ZnO films prepared by ultrasonic spray pyrolysis

Journal of Materials Science ◽

10.1007/s10853-005-2280-5 ◽

2006 ◽

Vol 41 (2) ◽

pp. 431-435 ◽

Cited By ~ 10

Author(s):

Mu Hee Choi ◽

Tae Young Ma

Keyword(s):

Substrate Temperature ◽

Spray Pyrolysis ◽

Ultrasonic Spray Pyrolysis ◽

Zno Films ◽

Ultraviolet Emission ◽

Ultrasonic Spray ◽

Influence Of Substrate

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Substrate Temperature Dependence of ZnO Films Prepared by Ultrasonic Spray Pyrolysis

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.6208 ◽

1996 ◽

Vol 35 (Part 1, No. 12A) ◽

pp. 6208-6211 ◽

Cited By ~ 26

Author(s):

Tae Young Ma ◽

Sang Hyun Kim ◽

Hyun Yul Moon ◽

Gi Cheol Park ◽

Young Jin Kim ◽

...

Keyword(s):

Substrate Temperature ◽

Temperature Dependence ◽

Spray Pyrolysis ◽

Ultrasonic Spray Pyrolysis ◽

Zno Films ◽

Ultrasonic Spray

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The effects of carrier gas and substrate temperature on ZnO films prepared by ultrasonic spray pyrolysis

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2012.11.009 ◽

2013 ◽

Vol 16 (3) ◽

pp. 625-632 ◽

Cited By ~ 11

Author(s):

Samerkhae Jongthammanurak ◽

Maetapa Witana ◽

Tinnaphob Cheawkul ◽

Chanchana Thanachayanont

Keyword(s):

Substrate Temperature ◽

Spray Pyrolysis ◽

Ultrasonic Spray Pyrolysis ◽

Zno Films ◽

Carrier Gas ◽

Ultrasonic Spray

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Properties of Mg Doped ZnO Films Prepared by Ultrasonic Spray Pyrolysis

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.804.88 ◽

2015 ◽

Vol 804 ◽

pp. 88-92 ◽

Cited By ~ 6

Author(s):

Sutatip Thonglem ◽

Somnuk Sirisoonthorn ◽

Kamonpan Pengpat ◽

Gobwute Rujijanagul ◽

Sukum Eitssayeam ◽

...

Keyword(s):

Spray Pyrolysis ◽

Grain Shape ◽

Ultrasonic Spray Pyrolysis ◽

Spherical Shape ◽

Zno Films ◽

Zno Film ◽

Ultrasonic Spray ◽

Doped Zno ◽

Percentage Ratio ◽

Mg Doped

This work is focused on the preparation of Mg doped ZnO films by ultrasonic spray pyrolysis and investigated the physical, optical and electrical properties of the films. These films were prepared from 0.02 M of Zn (CH3OO)2.2H2O and MgCl2 was used for doping. The atomic percentage ratio of Mg/Zn was varied from 0 to 9 at.%. The crystalline phase of all films was identified as ZnO polycrystalline structure with preferred orientation along the (002) plane. While, the grain shape of ZnO film was irregular shape, this shape changed to spherical shape with doped Mg concentration and changed again to rod shape with doped Mg concentration to 9 at.%. Although, the Mg dopant affects the shape of ZnO films but don’t affect resistivity of the films. Moreover, the Mg dopant shifts the absorption edge in transmittance spectra of films to lower wavelength and increases band gap of the films.

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Deposition of ZnO:Al Thin Films by Ultrasonic Spray Pyrolysis

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.150-151.1617 ◽

2010 ◽

Vol 150-151 ◽

pp. 1617-1620 ◽

Cited By ~ 1

Author(s):

Lin Dong ◽

Teng Fei Pei ◽

Hong Qing Li ◽

Da Yan Xu

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Spray Pyrolysis ◽

Doping Level ◽

Spray Pyrolysis Technique ◽

Ultrasonic Spray Pyrolysis ◽

Atmospheric Environment ◽

Molar Ratio ◽

Zno Films ◽

Ultrasonic Spray

Transparent conducting Al-doped ZnO films were prepared by ultrasonic spray pyrolysis technique on amorphous glass substrates under atmospheric environment with substrate temperature ranging from 350 to 500 , and Al/ZnO molar ratio of 1, 3 and 5 %. The impacts of the substrate temperature and doping level on structural, optical and electrical properties of the ZnO:Al thin films were investigated. The texture coefficient calculated from XRD data indicates that the substrate temperature at 450 and the doping level of 3 at.% is beneficial for crystal growth along (002) orientation. The Band gap (Eg) and Urbach parameter (E0) deduced by the optical absorption edge increases and decreases with the increase of Al doping level, respectively. The increase in sheet resistance is assumed to be associated with the decrease in preferential orientation and formation of Al2O3-x clusters.

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Optical and Defect Properties in Nearly Stochiometry ZnO Film Coated on Si (111) by Ultrasonic Spray Pyrolysis Method

Asian Journal of Applied Sciences ◽

10.24203/ajas.v8i4.6291 ◽

2020 ◽

Vol 8 (4) ◽

Author(s):

Bambang Soegijono ◽

Hamdan AKbar Notonegoro ◽

Iwan Sugihartono ◽

Emil Budianto ◽

Muhamad Riza Iskandar

Keyword(s):

Spray Pyrolysis ◽

Oxygen Vacancies ◽

Ultrasonic Spray Pyrolysis ◽

Electron Transition ◽

Zno Films ◽

Bandgap Energy ◽

Spray Pyrolysis Method ◽

Zno Film ◽

Band Emission ◽

Ultrasonic Spray

ZnO is one of ceramic semiconductor material, which has interesting properties due its wide bandgap energy (3.4 eV), and it may be used in many optoelectronic devices. Optical and Defects properties of ZnO could affect the properties of the devices. ZnO films have been deposited on Si (111) substrate by ultrasonic spray pyrolysis (U.S.P.) method at temperatures 400oC, 450oC, and 500oC. The samples consist of two part, annealed and non-annealed heat treatment. The annealed treatment was conducted at temperature 800oC for 2 hours. The XRD pattern revealed that the ZnO film is a polycrystalline. The T.E.M. characterization showed that non stochiometry of the ZnO film present. From the UV-vis pattern, the transition of electrons is affected by the defect present. The ZnO films show a characteristic luminescence properties. It found three defects, there are oxygen vacancies (Vo), oxygen interstitial (Oi), and an electron transition from the level of the ionized oxygen vacancies to the valence band, that is responsible for green band emission.

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