scholarly journals The Photoluminescence Behaviors of a Novel Reddish Orange Emitting Phosphor CaIn2O4:Sm3+Codoped with Zn2+or Al3+Ions

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Jing Gou ◽  
Dongyang Zhang ◽  
Binxun Yu ◽  
Jing Wang ◽  
Shengzhong Liu
Keyword(s):  
Light Emitting Diode ◽  
Luminescence Properties ◽  
Charge Balance ◽  
Transfer Energy ◽  
Light Emitting ◽  
Ultraviolet Excitation ◽  
Near Ultraviolet ◽  
Chromaticity Coordinates ◽  
Charge Transfer Absorption Band ◽  
Reddish Orange

A novel reddish orange phosphor CaIn2O4:Sm3+codoped with Zn2+or Al3+ions was prepared by solid state reaction and their luminescence properties were investigated under near ultraviolet excitation. The strategy of Zn2+or Al3+ions codoping was used with the aim to improve the luminescence properties of CaIn2O4:Sm3+, but the concrete effects of the two ions is different. The introduction of Zn2+ions can produceZnIn'defects that favor charge balance in CaIn2O4:Sm3+to facilitate its photoluminescence. The effect of Al3+ions codoping can effectively transfer energy from charge-transfer absorption band to characteristic transition of Sm3+ions, utilizing more energy from host absorption for the photoluminescence of Sm3+ions. Based on these mechanisms, the luminescence intensity of CaIn2O4:0.6%Sm3+was enhanced to 1.59 times and 1.51 times when codoping amount of Zn2+and Al3+ions reached 0.6%. However, the chromaticity coordinates of CaIn2O4:0.6%Sm3+almost did not have any changes after Zn2+ions or Al3+ions codoping; those are still located at reddish orange region. The excellent luminescence properties of CaIn2O4:0.6%Sm3+,0.6%Zn2+and CaIn2O4:0.6%Sm3+,0.6%Al3+demonstrate that they both have potential application value as new-style reddish orange phosphors on light-emitting diode.

High CRI in phosphor-in-doped glass under near-ultraviolet excitation for warm white light-emitting diode

2021 ◽  
Vol 229 ◽  
pp. 117684
Author(s):  
A. Arellano-Morales ◽  
J. Molina-González ◽  
H. Desirena ◽  
J.M. Bujdud-Perez ◽  
S. Calixto
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Ultraviolet Excitation ◽  
Near Ultraviolet ◽  
Warm White Light ◽  
Doped Glass

Synthesis of Tb3+-Doped Ca-Deficient Hydroxyapatite and its Photoluminescence for White Light-Emitting Diode Application

2012 ◽  
Vol 560-561 ◽  
pp. 825-829 ◽  
Author(s):  
Zhan Hui Zhang ◽  
Han Wang ◽  
Li Chen ◽  
De Xing Guo ◽  
Ke Qin Cai ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Green Emission ◽  
Luminescent Properties ◽  
Luminescent Intensity ◽  
P Values ◽  
Light Emitting ◽  
Ultraviolet Excitation ◽  
Near Ultraviolet ◽  
Maximum Value

Green-emitting Tb3+-doped Ca-deficient hydroxyapatite phosphor was successfully prepared from natural collophanite. The effects of (Tb+Ca)/P values on the crystal phases and luminescent properties of the prepared products were discussed. XRD results revealed that Ca-deficient hydroxyapatite was a biphase compound of hydroxyapatite (HA) and β-tricalcium phosphate (β-TCP), and its crystal phase transformed to HA with the increasing values of (Tb+Ca)/P. Photoluminescence measurements showed that the products presented intensely green emission peaking at 545 nm under near-ultraviolet excitation and the luminescent intensity had great correlation with the content ratios of β-TCP to HA. When (Tb+Ca)/P=1.3, the luminescent intensity of Tb3+-doped Ca-deficient hydroxyapatite reached the maximum value, which was much stronger than that of Tb3+-doped HA. These results indicate that Tb3+-doped Ca-deficient hydroxyapatite phosphor is suitable for potential application in white light-emitting diode (LED).

Tunable luminescence properties of the novel Tm3+- and Dy3+-codoped LiLa(MoO4)x(WO4)2−x phosphors for white light-emitting diodes

RSC Advances ◽  
2015 ◽  
Vol 5 (10) ◽  
pp. 7049-7057 ◽  
Author(s):  
Linlin Li ◽  
Yali Liu ◽  
Ruiqing Li ◽  
Zhihua Leng ◽  
Shucai Gan
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Luminescence Properties ◽  
The Novel ◽  
Transfer Energy ◽  
Light Emitting ◽  
White Area ◽  
Chromaticity Coordinates ◽  
White Light Emitting Diodes

Tm3+ can transfer energy to Dy3+ efficiently, and with increase in MoO42− content, the chromaticity coordinates changed from the edge to the center of the white area.

Broadband near-infrared BaMSi3O9:Cr3+ (M = Zr, Sn, Hf) phosphors for light-emitting diode applications

2021 ◽  
Author(s):  
Yan Zhang ◽  
Yanjie Liang ◽  
Shihai Miao ◽  
Dongxun Chen ◽  
Shao Yan ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Near Infrared ◽  
Light Emitting Diode ◽  
Solid State Reaction Method ◽  
Luminescence Properties ◽  
Light Emitting ◽  
Reaction Method ◽  
Simple Solid State Reaction

A series of Cr3+-doped BaMSi3O9 (M = Zr, Sn, Hf) near-infrared emitting phosphors with tunable luminescence properties have been successfully synthesized by using a simple solid-state reaction method. The developed...

scholarly journals AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

2008 ◽  
Vol 45 (4) ◽  
pp. 25-32 ◽  
Author(s):  
L. Dimitrocenko ◽  
J. Grube ◽  
P. Kulis ◽  
G. Marcins ◽  
B. Polyakov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Electron Tunneling ◽  
Light Emitting Diode ◽  
Vapour Phase ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Near Ultraviolet ◽  
Metal Organic ◽  
Organic Vapour

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting DiodeA 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, ann-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.

scholarly journals Chromaticity Study of Curcumin Dye Extracted from Curcuma longa L. Using for UV Light down Conversion for White Light Emitting Diode

2019 ◽  
Vol 290 ◽  
pp. 183-189
Author(s):  
Mahmood Al Shafouri ◽  
Naser Mahmoud Ahmed ◽  
Zainuriah Hassan ◽  
Munirah Abdullah Almessiere
Keyword(s):  
White Light ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Curcuma Longa ◽  
Color Temperature ◽  
Light Emitting ◽  
Chromaticity Coordinates ◽  
Major Factors ◽  
Color Rendering ◽  
Down Conversion

In thus study, Turmeric phosphor dye was extracted from Curcuma Longa L. via a simple technique using silica gel. The phosphor was used for light down-conversion of UV light for the manufacture white light emitting diode (WLED). The UV-LED was analyzed over 395nm wavelengths. The characteristics of the white light chromaticity were controlled by tuning the current and phosphor concentration. An optimum color rendering index (CRI) value of 63.4 was obtained. The chromaticity coordinates (CIE) and correlated color temperature (CCT) were measured for various currents and phosphor concentrations. The white phosphor exhibited CIE value of 0.355,0.338 and CCT of 4567 K. The concentration of phosphor and amount of applied current were confirmed to be major factors that control the intensity of white light emitted from the sample, where CIE and CRI of the emitted light steadily increased with the concentration of phosphor and current. Thus, phosphor concentration has a critical effect on conversion efficiency. Key words: Turmeric, phosphor, WLED, curcumin

Synthesis and luminescence properties of the red phosphor CaZrO3:Eu3+ for white light-emitting diode application

Open Physics ◽  
2011 ◽  
Vol 9 (4) ◽  
Author(s):  
Junli Huang ◽  
Liya Zhou ◽  
Yuwei Lan ◽  
Fuzhong Gong ◽  
Qunliang Li ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Red Light ◽  
Average Diameter ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Light Region

AbstractEu3+-doped CaZrO3 phosphor with perovskite-type structure was synthesized by the high temperature solid-state method. The samples were characterized by X-ray diffraction, scanning electron microscopy, fluorescence spectrophotometer and UV-vis spectrophotometer, respectively. XRD analysis showed that the formation of CaZrO3 was at the calcinations temperature of 1400°C. The average diameter of CaZrO3 with 4 mol% doped-Eu3+ was 2µm. The PL spectra demonstrated that CaZrO3:Eu3+ phosphor could be excited effectively in the near ultraviolet light region (397 nm) and emitted strong red-emission lines at 616 nm corresponding to the forced electric dipole 5 D 0 → 7 F 2 transitions of Eu3+. Meanwhile, the light-emitting diode was fabricated with the Ca0.96ZrO3:Eu0.043+ phosphor, which can efficiently absorb ∼ 400 nm irradiation and emit red light. Therefore Ca0.96ZrO3:Eu0.043+ may have applications for a near ultraviolet InGaN chip-based white light-emitting diode.

Near-ultraviolet chip-based phosphor-converted solar-spectrum white light-emitting diode

2020 ◽  
Vol 59 (01) ◽  
pp. 1
Author(s):  
Xinran Zhang ◽  
Shuo Zhang ◽  
Guodong Wang ◽  
Yunyu Wang ◽  
Meng Liang ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Solar Spectrum ◽  
Light Emitting ◽  
Near Ultraviolet
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